We report on the dramatic slowing down of the charge carrier dynamics in a quasi-two-dimensional organic conductor, which can be reversibly tuned through the Mott metal-insulator transition (MIT). At the finite-temperature critical endpoint we observe a divergent increase of the resistance fluctuations accompanied by a drastic shift of spectral weight to low frequencies, demonstrating the critical slowing down of the order parameter (doublon density) fluctuations. The slow dynamics is accompanied by non-Gaussian fluctuations, indicative of correlated charge carrier dynamics. A possible explanation is a glassy freezing of the electronic system as a precursor of the Mott MIT.
We report that the thermally-induced Mott transition in vanadium sesquioxide shows critical-slowing-down and enhanced variance ('critical opalescence') of the order parameter fluctuations measured through low-frequency resistance-noise spectroscopy. Coupled with the observed increase of also the phase-ordering time, these features suggest that the strong abrupt transition is controlled by a critical-like singularity in the hysteretic metastable phase. The singularity is identified with the spinodal point and is a likely consequence of the strain-induced long-range interaction.
We use inhomogeneous nonequilibrium dynamical mean-field theory to investigate the spreading of photo-excited carriers in Mott insulating heterostructures with strong internal fields. Antiferromagnetic correlations are found to affect the carrier dynamics in a crucial manner: An antiferromagnetic spin background can absorb energy from photo-excited carriers on an ultrafast timescale, thus enabling fast transport between different layers and the separation of electron and hole-like carriers, whereas in the paramagnetic state, carriers become localized in strong fields. This interplay between ch…
Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated groun…
We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for activated transport $σ_{\Box} = σ_{0}\exp(-W/k_{B}T)$, where $σ_{0}$ is a constant and $W$ depends on the gate voltage. The gate voltage dependence of the Hall coefficient shows that, unlike in conventional FETs, the effective mobility of dense hole carriers ($\sim1.6\times 10^{14}$ cm$^{-2}$) is enhanced by a positive gate voltage. This implies that carrier doping…
We present a theory of Mott memristors whose working principle is the non-linear carrier avalanche multiplication in Mott insulators subject to strong electric fields. The internal state of the memristor, which determines its resistance, is encoded in the density of doublon and hole excitations in the Mott insulator. In the current-voltage characteristic, insulating and conducting states are separated by a negative-differential-resistance region, leading to hysteretic behavior. Under oscillating voltage, the response of a voltage-controlled, non-polar memristive system is obtained, with retard…
We study real-time dynamics of a charge carrier introduced into undoped Mott insulator propagating under a constant electric field F on the t-J ladder and square lattice. We calculate quasistationary current. In both systems adiabatic regime is observed followed by the positive differential resistivity (PDR) at moderate fields where carrier mobility is determined. Quantitative differences between ladder and 2-dimensional (2D) system emerge when at large fields both systems enter negative differential resistivity (NDR) regime. In the ladder system Bloch-like oscillations prevail, while in 2D th…
We investigate the dynamics of correlated charge carriers in the vicinity of the Mott metal-to-insulator transition in various of the title quasi-two-dimensional organic charge-transfer salts by means of fluctuation (noise) spectroscopy. The observed $1/f$-type fluctuations are quantitatively very well described by a phenomenological model based on the concept of non-exponetial kinetics. The main result is a correlation-induced enhancement of the fluctuations accompanied by a substantial shift of spectral weight to low frequencies close to the Mott critical endpoint. This sudden slowing down o…
We compute the time-resolved photoemission spectrum after photo-doping in a two-dimensional Mott-Hubbard insulator. We find that the relaxation rate of high-energy photo-doped electrons in the paramagnetic phase scales with the strength of the nearest-neighbor spin correlations, which implies a pronounced increase of the relaxation times with temperature and excitation density. Finite doping, in contrast, opens additional scattering channels and leads to a faster relaxation. To obtain our results we have implemented a nonequilibrium version of the dynamical cluster approximation (DCA), which, …
We study the relaxation dynamics of photo-carriers in the paramagnetic Mott insulating phase of the half-filled two-band Hubbard model. Using nonequilibrium dynamical mean field theory, we excite charge carriers across the Mott gap by a short hopping modulation, and simulate the evolution of the photo-doped population within the Hubbard bands. We observe an ultrafast charge-carrier relaxation driven by emission of local spin excitations with an inverse relaxation time proportional to the Hund's coupling. The photo-doping generates additional side-bands in the spectral function, and for strong …
To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. To take account of the formation of Schottky barriers, we add scalar and vector potentials, which satisfy the Poisson equation with boundary values depending on the drain voltage, the gate bias, and the work-function difference. The current-voltage characteristics are obtained by solving the time-dependent Schrödinger …
We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for the transient carrier dynamics are presented based on the two dimensional $t-J$ model. Time dependences of the optical conductivity spectra as well as the one-particle excitation spectra are calculated based on the Keldysh Green's function formalism at zero temperature combined with the self-consistent Born approximation. At early stage after dynamical hole …
The influence of external magnetic field $h$ on a static conductivity of Mott-Hubbard material which is described by model with correlated hopping of electrons has been investigated. By means of canonical transformation the effective Hamiltonian which takes into account strong intra-site Coulomb repulsion and correlated hopping is obtained. Using a variant of generalized Hartree-Fock approximation the single-electron Green function and quasiparticle energy spectrum of the model have been calculated. The static conductivity $σ$ has been calculated as a function of $h$, electron concentration $n…
We study the dynamics of photo-induced charge carriers in realistic models of LaVO3 and YTiO3 polar heterostructures. It is shown that two types of impact ionization processes contribute to the carrier multiplication in these strongly correlated multi-orbital systems: The first mechanism involves local spin state transitions, while the second mechanism involves the scattering of high kinetic energy carriers. Both processes act on the 10 fs timescale and play an important role in the harvesting of high energy photons in solar cell applications. As a consequence, the optimal gap size for Mott so…
Photoemission Signatures of Photoinduced Carriers and Excitons in One-Dimensional Mott Insulators
The University of Tokyo（东京大学）；Institute for Materials Research, Tohoku University（东北大学物质材料研究机构）；RIKEN Center for Emergent Matter Science (CEMS)（理化学研究所新兴物质科学中心）；Trans-Scale Quantum Science Institute, University of Tokyo（东京大学跨尺度量子科学研究所）
Predictions are made for the momentum- and carrier-dependent degradation of the Mott gap upon doping in high-Tc cuprates as would be observed in Cu K-edge resonant inelastic x-ray scattering (RIXS). The two-dimensional Hubbard model with second- and third-nearest-neighbor hopping terms has been studied by numerical exact diagonalization. Special emphasis is placed on the particle-hole asymmetry of the Mott gap excitations. We argue that the Mott gap excitations observed by RIXS are significantly influenced by the interaction between charge carriers and antiferromagnetic correlations.
We investigated the infrared optical spectra of an organic dimer Mott insulator $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl, which was irradiated with X-rays. We observed that the irradiation caused a large spectral weight transfer from the mid-infrared region, where interband transitions in the dimer and Mott-Hubbard bands take place, to a Drude part in a low-energy region; this caused the Mott gap to collapse. The increase of the Drude part indicates a carrier doping into the Mott insulator due to irradiation defects. The strong redistribution of the spectral weight demonstrates that the organic M…
The physics of the Mott metal-insulator transition (MIT) has attracted huge interest in the last decades. However, despite broad efforts, some key theoretical predictions are still lacking experimental confirmation. In particular, it is not clear whether the large coherent Fermi surface survives in immediate proximity to the bandwidth-controlled first-order MIT. A quantitative experimental verification of the predicted behavior of the quasiparticle effective mass, renormalized by many-body interactions, is also missing. Here we address these issues by employing organic $κ$-type salts as exempl…
In the two-dimensional organic charge-transfer salts kappa-(BEDT-TTF)2Cu[N(CN)2]Br{x}Cl{1-x} a systematic variation of the Br content from x = 0 to 0.9 allows us to tune the Mott transition by increasing the bandwidth. At temperatures below 50 K, an energy gap develops in the Cl-rich samples and grows to approximately 1000 cm-1 for T -> 0. With increasing Br concentration spectral weight shifts into the gap region and eventually fills it up completely. As the samples with x = 0.73, 0.85 and 0.9 become metallic at low temperatures, a Drude-like response develops due to the coherent quasiparticl…
We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers, but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on X-ray…
We investigate the properties of the metallic state obtained by photo-doping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long life-time, so that they can dissipate their kinetic energy to a phonon bath. In the relaxed state, the scattering rate saturates at a non-zero temperature-independent value, and the momentum-resolved spectral function features broad bands which differ from the well-defined quasi-particle bands of a chemically doped system. Our results indicate that a photo-doped Mott insulator behaves as a bad metal, in which strong scattering…
A Dirac fermion emerges as a result of interplay between symmetry and topology in condensed matter. Current research moves towards investigating the Dirac fermions in the presence of manybody effects in correlated system. Here, we demonstrate the emergence of correlation-induced symmetry-protected Dirac semimetal state in the lightly-doped spin-orbit-coupled Mott insulator Sr$_2$IrO$_4$. We find that the nonsymmorphic crystalline symmetry stabilizes a Dirac line-node semimetal and that the correlation-induced symmetry-breaking electronic order further leads to a phase transition from the Dirac…
We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators $κ$-(ET)$_{2}$$X$ with $X =$ Cu[N(CN)$_{2}$]Cl and Cu$_{2}$(CN)$_{3}$. For $κ$-(ET)$_{2}$Cu[N(CN)$_{2}$]Cl, we have observed a large decrease of the resistivity by 40 % with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the…
Recent progress in optically trapped ultracold atomic gases is now making it possible to access microscopic observables in doped Mott insulators, which are the parent states of high-temperature superconductors. This makes it possible to address longstanding questions about the temperature scales at which attraction between charge carriers are present, and their mechanism. Controllable theoretical results for this problem are not available at low temperature due to the sign problem. In this work, we employ worm-algorithm Monte Carlo to obtain completely unbiased results for two charge carriers …
We study the influence of the pulse energy and fluence on the thermalization of photo-doped Mott insulators. If the Mott gap is smaller than the width of the Hubbard bands, the kinetic energy of individual carriers can be large enough to produce doublon-hole pairs via a process analogous to impact ionization. The thermalization dynamics, which involves an adjustment of the doublon and hole densities, thus changes as a function of the energy of the photo-doped carriers and exhibits two timescales -- a fast relaxation related to impact ionization and a slower timescale associated with higher-ord…
We performed optical-pump terahertz-probe measurements of a Mott insulator YTiO$_{3}$ and a band semiconductor Si using a laser diode (1.47 eV) and a femtosecond pulse laser (1.55 eV). Both samples possess long energy-relaxation times (1.5 ms for YTiO$_{3}$ and 15 $μ$s for Si); therefore, it is possible to extract terahertz complex conductivities of photoinduced carriers under equilibrium. We observed highly contrasting behavior - Drude conductivity in Si and localized conductivity possibly obeying the Jonscher law in YTiO$_{3}$. The carrier number at the highest carrier-concentration layer in…
Motivated by recent experiment on the Na$_4$Ir$_3$O$_8$ compound we study the Hubbard model on the "hyper-kagome lattice", which forms a three-dimensional network of corner sharing triangles, using dynamical cluster approximation (DCA) method with $N_c$=12 combined with the continuous-time quantum Monte Carlo (CT QMC) method. The system undergoes a Mott transition if the Hubbard interaction $U/W$ ($W$ is the bandwidth) exceeds the value of 1.2 for $T$=0.1 and displays reentrant behavior due to competition between the magnetic correlation and the kinetic energy of electrons due to the geometric…
One of the early triumphs of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states correctly predicts the character of most materials this approach can fail spectacularly, when the electrostatic repulsion between electrons causes strong correlations. Not only can these favor new and subtle forms of order in metals, such as magnetism or superconductivity, they can even cause the electrons in a half-filled energy band to lock into position altogether, producing a correlated, or Mott insulator. Arguably …
We present clear numerical evidence for the coexistence of metallic and insulating dynamical mean field theory(DMFT) solutions in a half-filled single-band Hubbard model with bare semicircular density of states at finite temperatures. Quantum Monte Carlo(QMC) method is used to solve the DMFT equations. We discuss important technical aspects of the DMFT-QMC which need to be taken into account in order to obtain the reliable results near the coexistence region. Among them are the critical slowing down of the iterative solutions near phase boundaries, the convergence criteria for the DMFT iterati…
A phenomenological model with itinerant bands and local states trapped by the lattice on the Cu-sites, is discussed to describe global features of cuprates. Relative energy positions of localized and itinerant states being tuned (thermodynamically or by doping), the system must undergo 1st order Mott metal-insulator transition. Decreasing the local level (from the metallic end of a stoichiometric compound), charge separation instability occurs first before the Mott transition. Crossing and hybridization between local (flat) and itinerant bands introduce a structure in density of states which m…
Electrons in a simple correlated system behave either as itinerant charge carriers or as localized moments. However, there is growing evidence for the coexistence of itinerant electrons and local moments in transition metals with nearly degenerate $d$-orbitals. It demands one or more selective electron orbitals undergo the Mott transition while the others remain itinerant. Here we report the first observation of such an orbital selective Mott transition (OSMT) in Ca$_{1.8}$Sr$_{0.2}$RuO$_4$ by angle-resolved photoemission spectroscopy (ARPES). While we observed two sets of dispersing bands and…
We use a nonequilibrium implementation of extended dynamical mean field theory to study the effect of dynamical screening in photo-excited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes further- more opens new relaxation channels and significantly speeds up the thermalization process. We also consider the effect of the energy distribution of the doped carriers on the screening.
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator $κ$-(BEDT-TTF)$_2$CuN(CN)$_2$Cl ($κ$-Cl).The FET shows a continuous metal$-$insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum $e^2/h$ , and hence is not associated with …
Based on a microscopic theoretical study, we show that novel superconductivity is induced by carrier doping in layered perovskite Ir oxides where a strong spin-orbit coupling causes an effective total angular momentum J_{eff}=1/2 Mott insulator. Using a variational Monte Carlo method, we find an unconventional superconducting state in the ground state phase diagram of a t_{2g} three-orbital Hubbard model on the square lattice. This superconducting state is characterized by a d_{x^2-y^2}-wave "pseudospin singlet" formed by the J_{eff}=1/2 Kramers doublet, which thus contains inter-orbital as we…
In a honeycomb-lattice spin-orbit assisted Mott insulator α-RuCl3, an ultrafast magnetization is induced by circularly polarized excitation below the Mott gap. Photo-carriers play an important role, which are generated by turning down the synergy of the on-site Coulomb interaction and the spin-orbit interaction realizing the insulator state. An ultrafast 6- fs measurement of photo-carrier dynamics and a quantum mechanical analysis clarify the mechanism, according to which the magnetization emerges from a coherent charge motion between different t2g orbitals (dyz-dxz-dxy) of Ru3+ ions. This ult…
Using a combination of th local-density approximtion (LDA) and dynamicla mean-field theory (DMFT) calculations, we explore the correlated electronic structure of a member of the layered Iron oxychalcogenide Na_{2}Fe_{2}OSe_{2}. We find that the parent compund is a multi-orbital Mott insulator. Surprisingly, and somewhat reminiscent of the doped high-T_{c} cuprates, carrier localization is found to persist upon weak hole doping because the chemical potential lies in a gap structure wit almost vanishing density-of-states (DOS). On the other hand, in remarkable contrast, electron doping drives an…
The dynamical mean-field method is used to formulate a computationally tractable theory of electron-phonon interactions in systems with arbitrary local electron-electron interactions in the physically relevant adiabatic limit of phonon frequency small compared to electron bandwidth or interaction scale. As applications, the phonon contribution to the effective mass of a carrier in a lightly doped Mott insulator is determined and the phase separation boundary is discussed.
Inspired by the physics of rare earth nickelates, we study the photoemission (PES) and resonant inelastic X-ray scattering (RIXS) spectra of a correlated electron system with two types of insulating sublattices. Sublattice A is characterized by a hybridization gap and a low-spin state, while sublattice B features a Mott gap and a local magnetic moment. We show how the coupling of these two qualitatively different insulating states affects the dynamics of photo-induced charge carriers and how the nonequilibrium states manifest themselves in the PES and RIXS signals. In particular, we find that …
We theoretically study pump-photon-energy-dependent pathways of a photoinduced dimer-Mott-insulator-to-metal transition, on the basis of numerical solutions to the time-dependent Schrödinger equation for the exact many-body wave function of a two-dimensional three-quarter-filled extended Peierls-Hubbard model. When molecular degrees of freedom inside a dimer are utilized, photoexcitation can weaken the effective interaction or increase the density of photocarriers. In the organic dimer Mott insulator, $ κ$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br, the intradimer and the interdimer charge-transfer excitat…
We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function G), interference of the zero surfaces of G with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fer…
We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we find a strong asymmetry between electron and hole doping. Upon electron doping an unusual metal with strong valence bond correlations forms. Hole doped systems are d-wave RVB superconductors in which superconductivity is strongly enhanced by the emergence of inhomogeneous plaquette bond order.
We argue that interesting strongly correlated two-dimensional electron systems can be created by modulation doping near a heterojunction between Mott insulators. Because the dopant atoms are remote from the carrier system, the electronic system will be weakly disordered. We argue that the competition between different ordered states can be engineered by choosing appropriate values for the dopant density and the setback distance of the doping layer. In particular larger setback distances favor two-dimensional antiferromagnetism over ferromagnetism. We estimate some key properties of modulation-…
A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric fields arising from the La$^{3+}$/Sr$^{2+}$ charge difference and the carriers are treated within a Hartree approximation; and the on-site interactions are treated by unrestricted Hartree-Fock. The phase diagram as a function of interaction strength and layer number is determined and predictions are made for optical conductivity experiments. A note worthy fi…
We consider theoretically the formation and stability of quasi-one dimensional many-body excitons in GaAs quantum wire structures under external photoexcitation conditions by solving the dynamically screened Bethe-Salpeter equation for realistic Coulomb interaction. In agreement with several recent experimental findings the calculated excitonic peak shows very weak carrier density dependence upto (and even above) the Mott transition density, $n_c\sim3\times10^5$ cm$^{-1}$. Above $n_c$ we find considerable optical gain demonstrating compellingly the possibility of one-dimensional quantum wire l…
We use midinfrared pulses with stable carrier-envelope phase offset to drive molecular vibrations in the charge transfer salt ET-F2TCNQ, a prototypical one-dimensional Mott insulator. We find that the Mott gap, which is probed resonantly with 10 fs laser pulses, oscillates with the pump field. This observation reveals that molecular excitations can coherently perturb the electronic on-site interactions (Hubbard U) by changing the local orbital wave function. The gap oscillates at twice the frequency of the vibrational mode, indicating that the molecular distortions couple quadratically to the …
Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature superconducting phases. In manganites, doping results in exotic physics such as insulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital- or charge-ordered (CO) or charge-disproportionate (CD) states. In most oxides, antiferromagnetic order and charge-disproportionation are asssociated with insulating behavior. Here we report the realization of …
We show how a lightly doped Mott insulator has hugely enhanced electronic thermal transport at low temperature. It displays universal behavior independent of the interaction strength when the carriers can be treated as nondegenerate fermions and a nonuniversal "crossover" region where the Lorenz number grows to large values, while still maintaining a large thermoelectric figure-of-merit. The electron dynamics are described by the Falicov-Kimball model which is solved for arbitrary large on-site correlation with a dynamical mean-field theory algorithm on a Bethe lattice. We show how these resul…
Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement with the high estimated value of the superexchange is obtained. The possibility of an electron-doped insulator-metal transition in $TiOCl$ is investigated in this scheme and a Mott-Hubbard transition with a jump in carrier density {\it inside} the metallic state is found. Clear, co-incident, discontinuous changes in orbital occupations are observed, showing …
It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two dimensions and lower, the smallest amount of disorder destabilizes the metal. The nature of the metal-insulator transition in an interacting system remains unresolved. Here we explore the effect of disorder on a strongly correlated Mott insulator without changing the carrier concentration. Angle resolved photoemission spectroscopy (ARPES) measurements on copper inte…
We study the Mott metal-insulator transition in the Periodic Anderson Model within Dynamical Mean Field Theory (DMFT). Near the quantum transition, we find a non-Fermi liquid metallic state down to a vanishing temperature scale. We identify the origin of the non-Fermi liquid behavior as due to magnetic scattering of the doped carriers by the localized moments. The non-Fermi liquid state can be tuned by either doping or external magnetic field. Our results show that the coupling to spatial magnetic fluctuations (absent in DMFT) is not a prerequisite to realize a non-Fermi liquid scenario for he…
The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit coupling. These models are characterized by the antiferromagnetic Heisenberg interaction and the anisotropic interaction whose form depends on the $d$ orbital occupancy. From exact diagonalization analyses on finite clusters, the ground state phase diagrams are derived, including a Kitaev spin liquid phase in a narrow parameter regime for $t_{2g}$ systems. Slav…
Symmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the strong-coupling limit. The symmetry of minimum-energy bound state is found to be s-wave, which is different from a d_{x^2-y^2} wave of a two-hole pair in doped Mott insulators. We demonstrate that the difference is originated from an exchange of fermions due to the motion of a doubly occupied site. Correspondingly large-shift Raman scattering across the Mott gap exhibi…
We utilize near-infrared pump and mid-infrared probe spectroscopy to investigate the ultrafast electronic response of pressurized VO$_2$. Distinct pump-probe signals and a pumping threshold behavior are observed even in the pressure-induced metallic state showing a noticeable amount of localized electronic states. Our results are consistent with a scenario of a bandwidth-controlled Mott-Hubbard transition.
We discuss photogenerated midgap states of a one-dimensional (1D) dimerized Mott insulator, potassium-tetracyanoquinodimethane (K-TCNQ). Two types of phonon modes are taken into account: intermolecular and intramolecular vibrations. We treat these phonon modes adiabatically and analyze a theoretical model by using the density-matrix renormalization group (DMRG). Our numerical results demonstrate that the intermolecular lattice distortion is necessary to reproduce the photoinduced midgap absorption in K-TCNQ. We find two types of midgap states. One is a usual polaronic state characterized by a …
We examine the single-particle excitation spectrum in the one-dimensional Hubbard-Holstein model at half-filling by performing the dynamical density matrix renormalization group (DDMRG) calculation. The DDMRG results are interpreted as superposition of spectra for a spinless carrier dressed with phonons. The superposition is a consequence of robustness of the spin-charge separation against electron-phonon coupling. The separation is in contrast to the coupling between phonon and spin degrees of freedom in two-dimensional systems. We discuss implication of the results of the recent angle-resolv…
A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard model, where the donor carriers are slightly deviated from quarter filling and under an incommensurate periodic potential from the anions. By use of the renormalization group method, interplay between commensurability energy on the donor lattice and that from the anion potential has been studied and it has been found that an "incommensurate Mott insulator" can…
We report on the study of insulator-to-metal transition in post-perovskite compound CaIrO3. It is discovered that a gradual chemical substitution of calcium by yttrium leads to the onset of strong metallic behavior in this compound. This observation is in stark contrast to BaIrO3, which preserves its Mott insulating behavior despite excess of charge carriers due to yttrium doping. Magnetic measurements reveal that both compounds tend to exhibit magnetic character irrespective of the chemical substitution of Ca or Ba. We analyze these unusual observations in light of recent researches that sugg…
