arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0908.0047cond-mat.str-el
收藏

Field-induced carrier delocalization in the strain-induced Mott insulating state of an organic superconductor

Yoshitaka Kawasugi, Hiroshi M. Yamamoto, Naoya Tajima, Takeo Fukunaga, Kazuhito Tsukagoshi, Reizo Kato

英文摘要:

We report the influence of the field effect on the dc resistance and Hall coefficient in the strain-induced Mott insulating state of an organic superconductor $κ$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Br. Conductivity obeys the formula for activated transport $σ_{\Box} = σ_{0}\exp(-W/k_{B}T)$, where $σ_{0}$ is a constant and $W$ depends on the gate voltage. The gate voltage dependence of the Hall coefficient shows that, unlike in conventional FETs, the effective mobility of dense hole carriers ($\sim1.6\times 10^{14}$ cm$^{-2}$) is enhanced by a positive gate voltage. This implies that carrier doping involves delocalization of intrinsic carriers that were initially localized due to electron correlation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑