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arXiv 0810.2539cond-mat.str-el
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不同带宽四分之一填充双轨道Hubbard链的Mott绝缘态

Mott insulating state in a quarter-filled two-orbital Hubbard chain with different bandwidths

S. Miyashita, Y. Yamashita, K. Yonemitsu, A. Koga, N. Kawakami

摘要:

研究了一维两带哈伯德模型在不同带宽下的基态性质。应用密度矩阵重整化群方法计算了平均电子占据数$n$与化学势$μ$的关系。在四分之一和二分之一填充时,“电荷平台”出现在$n$图中,其中$dμ/dn$发散并且实现Mott绝缘状态。为了了解四分之一电荷平台中的轨道极化是如何发展的,我们应用了来自四分之一填充时强耦合极限的二阶微扰理论。所得的Kugel-Khomskii自旋轨道模型包括耦合到轨道伪自旋的$magnetic$场。这个场起源于两个带宽之间的差异,并导致有限的轨道赝自旋磁化。

英文摘要:

We investigate the ground-state properties of the one-dimensional two-band Hubbard model with different bandwidths. The density-matrix renormalization group method is applied to calculate the averaged electron occupancies $n$ as a function of the chemical potential $μ$. Both at quarter and half fillings, "charge plateaux" appear in the $n$-$μ$ plot, where $dμ/dn$ diverges and the Mott insulating states are realized. To see how the orbital polarization in the one-quarter charge plateau develops, we apply the second-order perturbation theory from the strong-coupling limit at quarter filling. The resultant Kugel-Khomskii spin-orbital model includes a $magnetic$ field coupled to orbital pseudo-spins. This field originates from the discrepancy between the two bandwidths and leads to a finite orbital pseudo-spin magnetization.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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