arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1105.3196cond-mat.str-el
收藏

具有边界的一维四分之一填充莫特绝缘体的局域态密度

Local density of states of a quarter-filled one-dimensional Mott insulator with a boundary

Dirk Schuricht

摘要:

研究了四分之一填充的一维莫特绝缘体的低能极限。我们解析地确定了局域态密度的存在下,一个强的杂质势,这是由一个边界建模。为此,我们使用场论方法计算格林函数。局部态密度的傅里叶变换显示了自旋密度波在杂质处的钉扎的签名以及在电荷间隙以上的频率处的几个分散特征。这些特征可以解释为传播自旋和电荷自由度。它们的相对强度可以归因于具有相等动量的电荷激发的“准费米子”行为。此外,我们还讨论了束缚态局域在杂质上的影响。最后,我们给出了在各种一维系统的局域态密度的概述,并讨论了扫描隧道显微镜实验的影响。

英文摘要:

We study the low-energy limit of a quarter-filled one-dimensional Mott insulator. We analytically determine the local density of states in the presence of a strong impurity potential, which is modeled by a boundary. To this end we calculate the Green function using field theoretical methods. The Fourier transform of the local density of states shows signatures of a pinning of the spin-density wave at the impurity as well as several dispersing features at frequencies above the charge gap. These features can be interpreted as propagating spin and charge degrees of freedom. Their relative strength can be attributed to the "quasi-fermionic" behavior of charge excitations with equal momenta. Furthermore, we discuss the effect of bound states localized at the impurity. Finally, we give an overview of the local density of states in various one-dimensional systems and discuss implications for scanning tunneling microscopy experiments.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑