We present quasiparticle self-consistent GW (QSGW) calculations of semimetallic bulk Bi. We go beyond the conventional QSGW method by including the spin-orbit coupling throughout the self-consistency cycle. This approach improves the description of the electron and the hole pockets considerably with respect to standard density functional theory (DFT), leading to excellent agreement with experiment. We employ this relativistic QSGW approach to conduct a study of the semimetal-to-semiconductor and the trivial-to-topological transitions that Bi experiences under strain. DFT predicts that an unphysically large strain is needed for such transitions. We show, by means of the relativistic QSGW description of the electronic structure, that an in-plane tensile strain of only 0.3% and a compressive strain of 0.4% are sufficient to cause the semimetal-to-semiconductor and the trivial-to-topological phase transitions, respectively. Thus, the required strain moves into a regime that is likely to be realizable in experiment, which opens up the possibility to explore bulklike topological behavior of pure Bi.
The electronic band structure of Bi is calculated using state of the art electronic structure methods, including density functional theory and G$_0$W$_0$ quasiparticle approximations. The delicate ordering of states at the L point of the Brillouin zone, which determines the topological character of the electronic bands, is investigated in detail. The effect on the bands of strain, changing the structural parameters of the rhombohedral crystal structure, is shown to be important in determining this ordering and the resulting topological character.
The dependencies on strain and oxygen vacancies of the ferroelectric polarization and the weak ferromagnetic magnetization in the multiferroic material bismuth ferrite, BiFeO_3, are investigated using first principles density functional theory calculations. The electric polarization is found to be rather independent of strain, in striking contrast to most conventional perovskite ferroelectrics. It is also not significantly affected by oxygen vacancies, or by the combined presence of strain and oxygen vacancies. The magnetization is also unaffected by strain, however the incorporation of oxygen…
Here, we report a combined experimental-theoretical study showing that collective application of rare earth doping on A-site and epitaxial strain to ferroelectric bismuth titanate does not lead to a very large c-axis polarization as reported previously. Further first principles calculations based on the examination of polarization tensor suggest that simultaneous Bi and Ti site doping could result in moderate polarization along c-axis of bismuth titanate which is typically a preferential axis of film growth and thus enabling c axis oriented films to have appreciable polarization. This approach…
Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discovered a correlation between an electrically-written straight-stripe mixed-phase boundary and an in-plane antiferromagnetic spin axis in highly-elongated La-5%-doped BiFeO$_{3}$ thin films by performing p…
In complex oxide heteroepitaxy, strain engineering is a powerful tool to obtain phases in thin films that may be otherwise unstable in bulk. A successful example of this approach is mixed phase bismuth ferrite (BiFeO3) epitaxial thin films. The coexistence of a tetragonal-like (T-like) matrix and rhombohedral-like (R-like) striations provides an enhanced electromechanical response, along with other attractive functional behaviors. In this paper, we compare the energetics associated with two thickness dependent strain relaxation mechanisms in this system: domain walls arising from monoclinic di…
Bismuth vanadate (BiVO4) has recently been under focus for its potential use in photocatalysis thanks to its well-suited absorption edge in the visible light range. Here, we characterize the optical absorption of a BiVO4 single crystal as a function of temperature and polarization direction by reflectance and transmittance spectroscopy. The optical band gap is found to be very sensitive to temperature, and to the monoclinic-to-tetragonal ferroelastic transition at 523K. The anisotropy, as measured by the difference in absorption edge for light polarized parallel and perpendicular to the princi…
By means of first-principles calculations, we predict a new 2D QSH insulator in the porous allotrope of Bismuth monolayer, bismuthylene, its dynamics stability being confirmed by phonon spectrum and molecular dynamics simulations. The analyses of electronic structures reveal that it is a native QSH state with a gap much as large as 0.29 eV at the Γ point, which is larger than the buckled (0.2 eV) and flattened (0.2 eV) bismuth, Bi4Br4 (0.18 eV), as well as stanene (0.1 eV), also more stable energetically than these systems. Interestingly, the bismuthylene has tunable band gaps and nontrivial b…
Quantum spin Hall (QSH) insulators have gapless topological edge states inside the bulk band gap, which can serve as dissipationless spin current channels protected by the time-reversal symmetry. The major challenge currently is to find suitable materials for this topological state. Here, we predict a new large-gap QSH insulator with bulk direct band gap of $\sim$0.18 eV, in single-layer Bi$_{4}$Br$_{4}$, which could be exfoliated from its three-dimensional bulk material due to the weakly-bonded layered structure. The band gap of single-layer Bi$_{4}$Br$_{4}$ is tunable via strain engineering,…
We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find that, as Bi doping increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after doping we observe one phase transition between 135 and 155 K, in contrast to two transitions observed in the undoped single crystal. These results appear strikingly similar to previously reported effects …
We calculate the effect of epitaxial strain on the structure and properties of multiferroic bismuth ferrite, BiFeO3, using first-principles density functional theory. We find that, while small strains cause only quantitative changes in behavior from the bulk material, compressive strains of greater than 4% induce an isosymmetric phase transition accompanied by a dramatic change in structure. In striking contrast to the bulk rhombohedral perovskite, the highly strained structure has a c/a ratio of ~1.3 and five-coordinated Fe atoms. We predict a rotation of polarization from [111] (bulk) to nea…
Topological insulators (TIs) exhibit novel physics with great promise for new devices, but considerable challenges remain to identify TIs with high structural stability and large nontrivial band gap suitable for practical applications. Here we predict by first-principles calculations a two-dimensional (2D) TI, also known as a quantum spin Hall (QSH) insulator, in a tetragonal bismuth bilayer (TB-Bi) structure that is dynamically and thermally stable based on phonon calculations and finite-temperature molecular dynamics simulations. Density functional theory and tight-binding calculations revea…
Bismuth ferrite is one of the most widely studied multiferroic materials because of its large ferroelectric polarisation coexisting with magnetic order at room temperature. Using density functional theory (DFT), we identify several previously unknown polar and non-polar structures within the low-energy phase space of perovskite-structure bismuth ferrite, BiFeO$_3$. Of particular interest is a series of non-centrosymmetric structures with polarisation along one lattice vector, combined with anti-polar distortions, reminiscent of ferroelectric domains, along a perpendicular direction. We discuss…
Phase engineering by strains in 2D semiconductors is of great importance for a variety of applications. Here, we present a study of strain induced ferroelectric (FE) transition on bismuth oxyselenide (Bi$_2$O$_2$Se) films, a high-performance (HP) semiconductor for next-generation electronics. Bi$_2$O$_2$Se is non-FE at ambient. Upon a loading force $\gtrsim 400$ nN, piezoelectric force responses exhibit butterfly loops on magnitude and 180$^\textrm{o}$ phase switching. By carefully ruling out extrinsic factors, these features are attributed to a transition to FE phase. The transition is furthe…
Strain can induce a topological phase transition in bismuth dichalcogenides. We present the phase diagram for 3D topological insulators Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_2$Se$_3$ and Sb$_2$Se$_3$ with uniaxial and biaxal strain, which show metallic and insulating phases, both topologically trivial and non-trivial. In particular, uniaxial tension can drive Sb$_2$Te$_3$ into a topologically trivial insulating phase. Thus, we propose a Sb$_2$Te$_3$/Bi$_2$Te$_3$ heterojunction in which a topological interface state arises in the common gap of this topological insulator-normal insulator heterojunctio…
At high pressure, bismuth acquires a complex incommensurate host-guest structure, only recently discovered. Characterizing the structure and properties of this incommensurate phase from first principles is challenging owing to its non-periodic nature. In this study we use large scale DFT calculations to model commensurate approximants to the Bi-III phase, and in particular to describe the atomic modulations with respect to their ideal positions, shown here to strongly affect the electronic structure of the lattice and its stability. The equation of state and range of stability of Bi-III are re…
Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and patterning down to the nanometer resolution, which is of interest for device applications. We present here a study of bismuth ferrite (BiFeO3) films where strain was patterned locally by helium implantation. Our combined Raman, XRD and TEM study shows that the implantation causes an elongation of the BiFeO3 unit cell and ultimately a transition towa…
We characterize the electronic structure and elasticity of monolayer transition-metal dichalcogenides MX2 (M=Mo, W, Sn, Hf and X=S, Se, Te) with 2H and 1T structures using fully relativistic first principles calculations based on density functional theory. We focus on the role of strain on the band structure and band alignment across the series 2D materials. We find that strain has a significant effect on the band gap; a biaxial strain of 1% decreases the band gap in the 2H structures, by as a much 0.2 eV in MoS2 and WS2, while increasing it for the 1T materials. These results indicate that st…
We use a recently developed self-consistent GW approximation to present first principles calculations of the conduction band spin splitting in GaAs under [110] strain. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splitting under deformation based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. We also discuss the spin relaxation time under [1…
Bismuth ferrite (BiFeO$_3$) is one of the very few known single-phase multiferroic materials. While the bulk compound is rhombohedral (R), the discovery of an epitaxial strain-induced structural transition into a so-called 'super tetragonal-phase' (T-phase) in this material incited a flurry of research activity focused on gaining an understanding of this phase transition and its possible functionalities. This metastable phase of BiFeO$_3$ is also multiferroic, with giant ferroelectric polarization and coexisting antiferromagnetic order, but above all it is the strain relaxation-induced phase m…
First-principles full potential calculations based on Zeroth Order Regular Approximation (ZORA) relativistic Hamiltonian and Kohn-Sham form of Density Functional Theory (KS DFT) in local spin density approximation (LSDA) are reported for group IIIA-VA (InAs, GaAs, InP) semiconductors. The effects of relativity are elucidated by performing fully relativistic, scalar relativistic, and nonrelativistic calculations. Structural and electronic band structure parameters are determined including split-off energies, band gaps, and deformation potentials. The nature of chemical bonding at the equilibriu…
Magnetic phase transitions in multiferroic bismuth ferrite (BiFeO3) induced by magnetic field, epitaxial strain, and composition modification are considered. These transitions from a spatially modulated spin spiral state to a homogenous antiferromagnetic one are accompanied by the release of latent magnetization and a linear magnetoelectric effect that makes BiFeO3-based materials efficient room-temperature single phase multiferroics.
An exact mapping of the tight-binding Hamiltonian for a graphene's nanoribbon under any armchair uniaxial strain into an effective one-dimensional system is presented. As an application, for a periodic modulation we have found a gap opening at the Fermi level and a complex fractal spectrum, akin to the Hofstadter butterfly resulting from the Harper model. The latter can be explained by the commensurability or incommensurability nature of the resulting effective potential. When compared with the zig-zag uniaxial periodic strain, the spectrum shows much bigger gaps, although in general the state…
The electronic structure of Pb$_{1-x}$Sn$_{x}$Te is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations $x$, Pb$_{1-x}$Sn$_{x}$Te is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to s…
In topological semimetals, nodes appear at symmetry points in the Brillouin zone as a result of band inversion, and yield quasi-relativistic massless fermions at low energies. Cd3As2 is a three-dimensional topological semimetal that hosts two Dirac cones responsible for a variety of quantum phenomena. In this work, we demonstrate the strain tuning of the Dirac nodes of Cd3As2 through a combination of magnetooptical infrared spectroscopy and high-resolution X-ray diffraction studies performed on epitaxial films. In these thin films, we observe a giant enhancement of the node separation in momen…
Composition-driven structural transitions in Bi1-xCaxFe1-xMnxO3 ceramics prepared by the tartaric acid modified sol-gel technique have been studied to analyze its effect on the magnetic properties of bismuth ferrite (BiFeO3). It was observed that the co-substitution of Ca & Mn at Bi & Fe sites in BiFeO3 (BFO) significantly suppress the impurity phases. The quantitative crystallographic phase analysis has been carried out by double phase Rietveld analysis of all the XRD patterns which indicates the existence of compositional driven crystal structure transformation from rhombohederal (R3c space …
Multiconfigurational Analysis of Local Electronic Structure of $\mathrm{RuO_2}$ Using Relativistic Embedded Clusters
St. Petersburg State University（圣彼得堡国立大学）；B. P. Konstantinov Petersburg Nuclear Physics Institute of National Research Center “Kurchatov Institute” (NRC “Kurchatov Institute”–PNPI)（库尔恰托夫国家研究中心B.P.康斯坦丁诺夫圣彼得堡核物理研究所）；St. Petersburg State Technological Institute (Technical University)（圣彼得堡国立技术学院（理工学院））
