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arXiv 1503.02763cond-mat.mes-hall
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InAs/GaSb异质结中的缺陷和温度依赖性

Defect and Temperature Dependence of Tunneling in InAs/GaSb Heterojunctions

Ryan M. Iutzi, Eugene A. Fitzgerald

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摘要：

利用半导体异质结的隧道场效应晶体管（TFTs）已经显示出低能量逻辑的前景，但是目前不显示比60 mV/decade的室温热极限更陡的亚阈值摆动。这些器件还显示出明显的温度依赖性，这不是隧穿过程的特征。在这里，我们探索这些方面通过研究两端InAs/GaSb异质结的温度依赖性，允许在界面处的隧穿的真实性质被视为没有卷积从其他三端寄生效应，如栅极氧化物陷阱。我们比较了InAs/GaSb界面的峰值电流，过电流和电导斜率与温度的关系，有和没有界面缺陷。我们确定，隧道和过剩电流取决于温度和缺陷密度，并提出基于这些材料的最终漏电流将受到界面处的缺陷和不均匀性的影响。我们确定的电导斜率，一个两个终端模拟亚阈值斜率，不依赖于温度，对比鲜明的三端设备中看到的严重的温度依赖性在文献中。我们建议，TFFET的基础上，这个和类似的材料系统是由寄生效应，如隧道进入氧化物陷阱状态，或其他寄生是不固有的异质结本身，并在没有这些影响，真正的陡度从带到带隧穿是有限的缺陷和不均匀性的界面。

英文摘要：

Tunnel field effect transistors (TFETs) utilizing semiconductor heterojunctions have shown promise for low energy logic but presently do not display subthreshold swings steeper than the room-temperature thermal limit of 60 mV/decade. These devices also show a pronounced temperature dependence that is not characteristic of a tunneling process. Herein, we explore these aspects by studying the temperature dependence of two-terminal InAs/GaSb heterojunctions, allowing for the true nature of tunneling at the interface to be seen without convolution from other three-terminal parasitic effects such as gate oxide traps. We compare the temperature dependence of peak current, excess current, and conductance slope for InAs/GaSb interfaces with and without interface defects. We identify that the tunnel and excess currents depend on temperature and defect density and propose that the ultimate leakage current in TFETs based on these materials will be affected by defects and inhomogeneity at the interface. We determine that the conductance slope, a two-terminal analog to subthreshold slope, does not depend on temperature, contrasting sharply with the heavy temperature dependence seen in three terminal devices in literature. We propose that TFETs based on this and similar materials systems are dominated by parasitic effects such as tunneling into oxide trap states, or other parasitics that are not intrinsic to the heterojunction itself, and that in the absence of these effects, the true steepness from band-to-band tunneling is limited by defects and inhomogeneity at the interface.

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