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arXiv 1503.02580cond-mat.str-el
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Reply to "Comment on `Floquet Fractional Chern Insulators'"

Adolfo G. Grushin, Álvaro Gómez-León, Titus Neupert

英文摘要:

We respond to the comments expressed by L. D'Alessio in arXiv:1412.3481 on our work "Floquet Fractional Chern Insulators" [Phys. Rev. Lett. 112, 156801 (2014)]. We confirm the central result that the ground state of the effective Hamiltonian is an interacting fractional Chern insulator.

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