层状骰子晶格上的Floquet拓扑自旋-谷-层电子学
Floquet Topological Spin-Valley-Layertronics on a Layered Dice Lattice
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中文总结 AI 辅助
本研究在层状骰子晶格体系中，利用圆偏振光、垂直位移场调控关联拓扑相，确立其为电控磁性与拓扑相的多功能平台，提供集成自旋-谷-层电子学的全电学方案。
中文摘要 AI 辅助
近期在层状YCl电子化物中发现的长期寻求的骰子平带，为骰子晶格体系中的关联与拓扑物理学开辟了丰富可能性[Nature Communications 17, 2213 (2026), arXiv:2509.05958]。本文中，我们揭示了在 onsite Hubbard相互作用下，能带填充ν=4的通用层状骰子晶格体系中存在大量独特的关联拓扑相：（i）该体系是本征子晶格反铁磁（AFM）量子自旋-谷霍尔绝缘体；（ii）圆偏振光（CPL）将AFM自旋-谷绝缘体驱动为Floquet奇宇称f波 altermagnet（AM）绝缘体；（iii）垂直位移场将Floquet f波 AM绝缘体转化为自旋-谷-层极化的陈绝缘体，自旋、谷与陈数的符号均由位移场方向控制。我们的结果不仅确立层状骰子晶格为电控磁性与拓扑相的多功能平台，还为集成自旋-谷-层电子学提供了全电学方案，用于非易失性信息存储与处理。
英文摘要
The recent discovery of long-sought dice flat band in layered YCl electride has opened up rich possibilities of correlation and topological physics in dice lattice systems [Nature Communications 17, 2213 (2026), arXiv:2509.05958]. Here, we reveal a plethora of distinctive correlated topological phases in a generic layered dice lattice system at band filling of $ν=4$ under on-site Hubbard interactions: (i) the system is an intrinsic sublattice anti-ferromagnetic (AFM) quantum spin-valley Hall insulator; (ii) a circularly polarized light (CPL) drives the AFM spin-valley insulator into a Floquet odd-parity $f$-wave altermagnet(AM) insulator; (iii) a vertical displacement field turns the Floquet $f$-wave AM insulator into a spin-valley-layer-polarized Chern insulator, with the sign of spin, valley and Chern number all controlled by the direction of the displacement field. Our results not only establish the layered dice lattice as a versatile platform for electrically switchable magnetic and topological phases, but also provide an all-electrical scheme for integrated spin-valley-layertronics for non-volatile information storage and processing.
发表机构
- The Hong Kong University of Science and Technology (Guangzhou)（香港科技大学（广州））
- Huazhong University of Science and Technology（华中科技大学）
机构由 AI 辅助整理，请以论文原文为准。
