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arXiv 1504.03583cond-mat.quant-gascond-mat.mes-hallcond-mat.str-el
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玻色子和费米子Floquet分数Chern绝缘体的实空间微运动的作用

The role of real-space micromotion for bosonic and fermionic Floquet fractional Chern insulators

Egidijus Anisimovas, Giedrius Žlabys, Brandon M. Anderson, Gediminas Juzeliūnas, André Eckardt

摘要:

分数阶陈氏绝缘体是一种物质相,它模拟了没有整体磁场的晶格上的分数阶量子霍尔态的物理学。Floquet分数Chern绝缘体的概念是指通过Floquet工程产生底层拓扑能带结构的潜在可能性。在这些方案中,一个高度可控和强相互作用的系统周期性地由外力以一定的频率驱动,使得在一个强制周期期间的双隧穿事件变得重要,并有助于形成所需的有效能带。我们表明,在所描述的情况下,它是必要的,也考虑到三阶过程相结合的两个隧道事件的相互作用。参考所获得的贡献作为微动诱导的相互作用,我们发现,这些相互作用往往有一个负面的影响分数陈绝缘相的稳定性,并讨论了未来的实验的影响。

英文摘要:

Fractional Chern insulators are the proposed phases of matter mimicking the physics of fractional quantum Hall states on a lattice without an overall magnetic field. The notion of Floquet fractional Chern insulators refers to the potential possibilities to generate the underlying topological bandstructure by means of Floquet engineering. In these schemes, a highly controllable and strongly interacting system is periodically driven by an external force at a frequency such that double tunneling events during one forcing period become important and contribute to shaping the required effective energy bands. We show that in the described circumstances it is necessary to take into account also third order processes combining two tunneling events with interactions. Referring to the obtained contributions as micromotion-induced interactions, we find that those interactions tend to have a negative impact on the stability of of fractional Chern insulating phases and discuss implications for future experiments.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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