arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1409.6832cond-mat.mtrl-sci
收藏

Ge(001)上Pb的表面共振带与Ge态的带间相互作用

Interband interaction between Ge states and surface resonance band of Pb on Ge(001)

Tomohiro Sakata, Sakura N. Takeda, Kousuke Kitagawa, Haruka Kumeda, Kazuki Kokui, Hiroshi Daimon

摘要:

本文用角分辨光电子能谱学研究了Pb在Ge(001)上的价带结构。在Ge(001)2x1清洁表面上观察到三个Ge带,G1,G2和G3。除了这三个带,第四带(R带)被发现在2毫升的铅覆盖。即使表面超结构发生变化,R带仍继续出现。R带的位置不依赖于Pb覆盖度。这些结果表明,R带来自称为表面共振态的Ge次表面态。此外,当第四带存在时,G3的有效质量显著减小。我们发现,这种减少的G3有效质量的解释的G3和表面共振带的相互作用。因此,表面共振带穿透Ge次表面区域,影响Ge体态。我们观察到Ge态和Pb吸附引起的表面共振态态之间的杂化。

英文摘要:

We investigate the valence band structure of Pb on Ge(001) by Angle-Resolved Photoelectron Spectroscopy. Three Ge bands, G1, G2, and G3, were observed on Ge(001) 2x1 clean surface. In addition to these three bands, a forth band (R band) is found in the 2 ML of Pb coverage. The R band continues to appear even when the surface superstructure changed. The position of the R band does not depend on Pb coverage. These results indicate that the R band derives from Ge subsurface states known as surface resonance states. Furthermore, the effective mass of G3 is significantly reduced when this forth band exists. We found that this reduction of the G3 effective mass was explained by the interaction of the G3 and the surface resonance band. Consequently, the surface resonance band penetrates the Ge subsurface region affecting the Ge bulk states. We observed the hybridization between Ge states and the surface resonance states induced by Pb adsorption.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑