Ⅲ族氮化物紫外发光器件空穴注入的带间隧道效应
Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters
摘要：
紫外线发射器在传感、水净化和数据存储领域中具有若干应用。虽然III族氮化物半导体系统具有紫外发射所需的带隙区域，但由于宽带隙AlGaN基紫外光发射器中的低p型电导率和高接触电阻，实现有效的紫外固态发射器仍然是一个挑战。在这项工作中，我们表明，有效的带间隧穿可以用于非平衡注入到紫外发光的空穴。极化工程隧道结被用来提高隧穿概率的几个数量级的PN同质结，导致高效的隧道注入的空穴的紫外光发射器。这种有效的带间隧穿的演示为紫外发光二极管和二极管激光器的设计引入了新的范例，并且实现了更高的效率和更低的成本的紫外发射器。
英文摘要：
Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide band gap AlGaN-based ultra-violet light emitters. In this work, we show that efficient interband tunneling can be used for non-equilibrium injection of holes into ultraviolet emitters. Polarization-engineered tunnel junctions were used to enhance tunneling probability by several orders of magnitude over a PN homojunction, leading to highly efficient tunnel injection of holes to ultraviolet light emitters. This demonstration of efficient interband tunneling introduces a new paradigm for design of ultra-violet light emitting diodes and diode lasers, and enables higher efficiency and lower cost ultra-violet emitters.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
