提出并分析了基于双石墨层和多石墨层结构的垂直热电子太赫兹（THz）石墨烯层探测器（GLDs）的概念，其势垒层由具有适度导带偏移的材料（如二硫化钨等材料）制成。这些探测器的操作是通过来自GLS的电子发射来实现的，所述电子发射通过由入射THz辐射加热的电子来增强。电子加热主要与带内吸收（Drude吸收）有关。计算了不同GL数的GL探测器的响应率和探测率随光子能量、GL掺杂和外加电压的变化关系。基于级联多GL结构的探测器可以表现出相当大的光电增益，从而提高了响应率和探测率。所考虑的太赫兹探测器的优点与它们对正入射辐射的高灵敏度和在太赫兹频率范围的低端在室温下的高效操作相关联。这种具有金属光栅的GLD，支持通过入射THz辐射激发GL结构中的等离子体振荡，可以在几个THz的频率下表现出强的谐振响应（在该范围内，其中基于A $_3$ B $_5$材料的常规检测器，特别是THz量子阱检测器的操作由于这种材料中的强光学声子辐射吸收而受到阻碍）。
英文摘要：
We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation of these detectors is enabled by the thermionic emissions from the GLs enhanced by the electrons heated by incoming THz radiation.
The electron heating is primarily associated with the intraband absorption (the Drude absorption). We calculate the responsivity and detectivity as functions of the photon energy, GL doping, and the applied voltage for the GL detectors (GLDs) with different number of GLs. The detectors based on the cascade multiple-GL structures can exhibit a substantial photoelectric gain resulting in the elevated responsivity and detectivity. The advantages of the THz detectors under consideration are associated with their high sensitivity to the normal incident radiation and efficient operation at room temperature at the low end of the THz frequency range. Such GLDs with a metal grating, supporting the excitation of plasma oscillations in the GL-structures by the incident THz radiation, can exhibit a strong resonant response at the frequencies of several THz (in the range, where the operation of the conventional detectors based on A$_3$B$_5$ materials, in particular THz quantum-well detectors, is hindered due to a strong optical phonon radiation absorption in such materials).
Phase- and angle-sensitive terahertz hot-electron bolometric plasmonic detectors based on FETs with graphene channel and composite h-BN/black-P/h-BN gate layer
Negative terahertz conductivity at vertical carrier injection in a black-Arsenic-Phosphorus-Graphene heterostructure integrated with a light-emitting diode
我们提出并分析了异质结构，包括黑砷磷层（b-As $_{1-x}$ P $_x$ L）和石墨烯层（GL）集成与发光二极管（LED）。集成的b-As $_{1-x}$ P $_x$ L-GL-LED异质结构可以作为太赫兹（THz）激光器的有源部分，使用GL中的带间辐射跃迁。所提出的概念的可行性通过b-As $_{1-x}$ P $_x$ L中相对窄的能隙和与GL的适当能带对准的组合来实现。所讨论的器件的操作与由b-As $_{1-x}$ P $_x$ L中的LED发射的近红外辐射产生电子-空穴对、该层中的光生电子和空穴的冷却以及它们注入GL中相关联。由于b-As $_{1-x}$ PL的最小能隙能隙小于GL中光学声子的能量，因此注入GL可以导致GL中二维电子-空穴等离子体（2D-EHP）的相对弱的加热。在略低于室温的温度下，注入可以冷却2D-EHP。这有利于GL的带间布居数反转，增强其在THz范围内的负动态电导率，以及实现支持新型THz辐射源的光学和等离子体激元模式激光。
Coherent Absorption Synergizes with Plasmon-Enhanced Graphene Terahertz Photo-thermoelectric Response
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University（中山大学光电材料与技术国家重点实验室、广东省显示材料技术重点实验室、电子与信息学院）
Electron Transport across Vertical Silicon / MoS${_2}$ / Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene-Base Hot Electron Transistors
Time-resolved terahertz dynamics in thin films of the topological insulator Bi$_{2}$Se$_3$
我们使用光泵-太赫兹探测光谱在低温下研究薄Bi $_2$ Se $_3$膜的几种厚度的热载流子响应，使我们能够从表面瞬态响应分离的体积。我们发现，对于较薄的薄膜的光激发改变的传输散射率，并降低太赫兹电导率，这在10皮秒（ps）内放松。对于较厚的膜，电导率增加后，光激发和规模与增加的膜厚度和光通量，具有约5 ps的衰减时间以及高得多的散射率。这些不同的动力学归因于表面和体电子，分别，并表明，长寿命的移动表面光载流子可以独立地访问低于某些膜厚度的可能的光电应用。
Interaction-limited conductivity of twisted bilayer graphene revealed by giant terahertz photoresistance
National University of Singapore（新加坡国立大学）；Institute for Functional Intelligent Materials, National University of Singapore（新加坡国立大学功能智能材料研究所）；University of Florida（佛罗里达大学）；Center for Neurophysics and Neuromorphic Technologies（神经物理与神经形态技术中心）；University of Regensburg（雷根斯堡大学）；National Institute of Material Science（物质材料研究机构）；Institute of High Pressure Physics, PAS（波兰科学院高压物理研究所）；University at Buffalo, The State University of New York（纽约州立大学布法罗分校）；Moscow Center for Advanced Studies（莫斯科高等研究院）；University of Manchester（曼彻斯特大学）
Effect of doping on hot-carrier thermal breakdown in perforated graphene metasurfaces
School of Computer Science and Engineering, University of Aizu（会津大学计算机科学与工程学院）；Research Institute of Electrical Communication, Tohoku University（东北大学电气通信研究所）；Frontier Research Institute for Interdisciplinary Sciences, Tohoku University（东北大学交叉学科学术前沿研究院）；International Research Institute of Disaster Science, Tohoku University（东北大学国际灾害科学研究中心）；Center of Excellence ENSEMBLE3（ENSEMBLE3卓越中心）；UNIPRESS Institute of High Pressure Physics of the Polish Academy of Sciences（波兰科学院高压物理UNIPRESS研究所）；Electronics of the Future, Inc.（未来电子公司）
Thermal hot-carrier breakdown in metasurface structures based on coplanar arrays of graphene microribbons connected with wide-gap bridges
Tohoku University（东北大学）；University of Aizu（会津大学）；Electronics of the Future, Inc.（未来电子公司）；Rensselaer Polytechnic Institute（伦斯勒理工学院）；Center of Excellence ENSEMBLE3 Ltd.（ENSEMBLE3卓越中心有限公司）；Polish Academy of Sciences（波兰科学院）
