基于带浮栅的石墨烯/黑砷磷场效应晶体管的热电子共振太赫兹测辐射热探测
Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate
AI总结：
本文提出一种基于石墨烯沟道和黑磷/黑砷势垒层浮栅结构的场效应晶体管太赫兹探测器，利用入射辐射加热二维电子气引发热电子发射改变栅势，在等离激元共振频率下实现高响应率测辐射热探测。
摘要：
我们评估了基于场效应晶体管（FET）的太赫兹（THz）探测器，该晶体管具有石墨烯沟道{GC}和一个由黑磷或黑砷势垒层（BL）与GC隔开的浮置金属栅（MG）。这些GC-FET的运行机制与入射THz辐射加热GC中的二维电子气有关，导致热电子从GC热电子发射到MG。这引起浮栅电势的变化，从而影响源漏电流。在THz辐射频率接近受栅极控制的GC中的等离激元共振频率时，源漏电流的变化及探测器响应率可以达到共振极大值。
英文摘要：
We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation of these GC-FETs is associated with the heating of the two-dimensional electron gas in the GC by impinging THz radiation leading to thermionic emission of the hot electrons from the GC to the MG. This results in the variation of the floating gate potential, which affects the source-drain current. At the THz radiation frequencies close to the plasmonic resonance frequencies in the gated GC, the variation of the source-drain current and, hence, the detector responsivity can be resonantly large.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
