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arXiv 1408.6314cond-mat.str-elcond-mat.mtrl-sci
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层状铱酸盐Ba2IrO4中Jeff=1/2与3/2带的相关与常规绝缘行为

Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4

M. Uchida, Y. F. Nie, P. D. C. King, C. H. Kim, C. J. Fennie, D. G. Schlom, K. M. Shen

摘要:

我们采用分子束外延来稳定Ba 2 IrO 4薄膜,并利用原位角分辨光电子能谱来研究其电子结构的演变,通过尼尔温度TN。我们的测量结果表明,相对论性杰夫=1/2和3/2带的色散表现出不寻常的二分法,在他们的行为通过尼尔过渡。虽然电荷间隙生存到顺磁状态,只有杰夫=1/2状态表现出很强的温度依赖性,其间隙随着接近TN的温度增加而软化,而几乎完全占据的杰夫=3/2状态,其能量保持在附近,随着温度的变化可以忽略不计。

英文摘要:

We employ molecular beam epitaxy to stabilize Ba2IrO4 thin films and utilize in situ angle-resolved photoemission spectroscopy to investigate the evolution of its electronic structure through the Neel temperature TN. Our measurements indicate that dispersions of the relativistic Jeff=1/2 and 3/2 bands exhibit an unusual dichotomy in their behavior through the Neel transition. Although the charge gap survives into the paramagnetic state, only the Jeff=1/2 state exhibits a strong temperature dependence and its gap softens with increasing temperature approaching TN, while the nearly fully occupied Jeff=3/2 state which remains nearby in energy exhibits negligible changes with temperature.

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