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arXiv 1407.8048cond-mat.mes-hallcond-mat.str-el
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三维Dirac材料中的量子输运

Quantum transport through 3D Dirac materials

M. Salehi, S. A. Jafari

摘要:

铋及其合金提供了一种实现三维材料的范例,其低能有效理论由3+1维Dirac方程给出。本文在Landauer-Büttiker理论框架下研究了三维Dirac材料的量子输运性质。满足薛定谔方程的正常金属中的载流子,在与三维狄拉克材料(3DDM)的边界处,通过适当的匹配条件,可以分裂成四个分量。我们计算了3DDM与正常金属分离界面的电导和Fano因子,以及通过3DDM平板的电导。在某些情况下,3DDM对于撞击3DDM的电子来说似乎是透明的。研究发现,从金属一侧入射到3DDM界面的电子,只要其入射角偏离垂直于界面的方向,就可以以反自旋态进入3DDM。然而,第二界面的存在完全抵消了这种效果。

英文摘要:

Bismuth and its alloys provide a paradigm to realize three dimensional materials whose low-energy effective theory is given by Dirac equation in 3+1 dimensions. We study the quantum transport properties of three dimensional Dirac materials within the framework of Landauer-Büttiker formalism. Charge carriers in normal metal satisfying the Schrödinger equation, can be split into four-component with appropriate matching conditions at the boundary with the three dimensional Dirac material (3DDM). We calculate the conductance and the Fano factor of an interface separating 3DDM from a normal metal, as well as the conductance through a slab of 3DDM. Under certain circumstances the 3DDM appears transparent to electrons hitting the 3DDM. We find that electrons hitting the metal-3DDM interface from metallic side can enter 3DDM in a reversed spin state as soon as their angle of incidence deviates from the the direction perpendicular to interface. However the presence of a second interface completely cancels this effect.

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