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arXiv 1209.4685cond-mat.str-elcond-mat.mes-hallcond-mat.mtrl-sci
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Dirac材料中声子诱导的拓扑跃迁和交叉

Phonon-induced topological transitions and crossovers in Dirac materials

Ion Garate

摘要:

我们发现,电子-声子相互作用可以改变狄拉克绝缘体和半金属的拓扑性质,在零和非零温度。与普遍认为温度升高总是会使拓扑相不稳定相反,我们的研究结果突出了声子可能导致拓扑表面态出现在具有拓扑平凡基态的材料中的交叉温度以上的情况。

英文摘要:

We show that electron-phonon interactions can alter the topological properties of Dirac insulators and semimetals, both at zero and nonzero temperature. Contrary to the common belief that increasing temperature always destabilizes topological phases, our results highlight instances in which phonons may lead to the appearance of topological surface states above a crossover temperature in a material that has a topologically trivial ground state.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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