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arXiv 1406.2640cond-mat.mtrl-sci
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极低压脉冲甲烷在铜/镍/硅上合成石墨烯的单层形成时间研究

Investigation of monolayer-formation time for the synthesis of graphene on copper/nickel/silicon using very-low pressure pulses of methane

V-M. Freire, A. Ramirez, E. Pascual, E. Bertran, J-L. Andujar

摘要:

在铜上化学气相沉积(CVD)石墨烯是大面积生产高质量石墨烯的最有效技术之一。然而,目前仍然需要高压和大量的前体气体。这项工作的目的是使用来自气体动力学理论的单层形成时间概念(t)来沉积石墨烯,这导致前体气体的经济化、工艺压力的最小化和生长石墨烯单层所需的时间。我们的工艺设计考虑到t对压力、气体质量粒子、粘附系数和生长温度的依赖性。因此,通过这种替代方法,基于CVD,但使用非常低的前体气体压力瞬时脉冲(~10^-4 Pa),我们将沉积时间减少到10 s的量级。我们在低于1000摄氏度的温度下,在高真空(HV)条件下,以甲烷(CH 4)作为前体气体进行了这些过程。在对样品进行拉曼光谱和绘图以及扫描电子显微镜(SEM)表征后,结果表明在溅射的铜和硅衬底上形成了高质量的单层石墨烯,覆盖了10^4微米^2的畴面积。

英文摘要:

Chemical Vapor Deposition (CVD) of graphene on copper is one of the most efficient technologies for producing high quality graphene for large areas. Nevertheless, still high pressures and big quantities of precursor gas are currently required. The objective of this work is to deposit graphene using the monolayer-formation-time concept (t) from the kinetic theory of gases, which leads to an economization of the precursor gas, a minimization of the process pressure and the time needed to grow a graphene monolayer. Our process has been designed taking into account the dependence of t on the pressure, the mass particle of the gas, the sticking coefficient, and the growth temperature. Thus, with this alternative method, based on CVD but using very-low pressure instant pulses of precursor gas (~10^-4 Pa), we have reduced the deposition time to the order of 10 s. We carried out the processes at temperatures below 1000 Grad Celsius with methane (CH4) as a precursor gas under High Vacuum (HV) conditions. After Raman spectroscopy and mapping, and Scanning Electron Microscopy (SEM) characterization of the samples, the results point to the formation of high quality monolayer graphene on sputtered copper and silicon substrates covering domain areas of 10^4 micron^2.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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