The intrinsic spin and valley Hall conductivities of silicene, germanene and other similar two dimensional crystals are explored theoretically. Particular attention is given to the effects of the intrinsic spin-orbit coupling, electron doping and the type of insulating phase of the system (i.e., a topological insulator or a band insulator) which can be tuned by a perpendicular electric field. At finite frequency, the transverse edge to which carriers of particular spin and valley label flow can be controlled such that an accumulation of a particular combination of spin and valley index can be obtained. The direction of flow is found to be dependent on the type of insulating phase. The magnitude of the Hall conductivity response is enhanced from the DC values at certain incident photon frequencies associated with the onset of interband transitions. Analytic results are presented for both the DC and finite frequency results.
We present first-principles calculations of silicene/graphene and germanene/graphene bilayers. Various supercell models are constructed in the calculations in order to reduce the strain of the lattice-mismatched bilayer systems. Our energetics analysis and electronic structure results suggest that graphene can be used as a substrate to synthesize monolayer silicene and germanene. Multiple phases of single crystalline silicene and germanene with different orientations relative to the substrate could coexist at room temperature. The weak interaction between the overlayer and the substrate preser…
Silicene and germanene are key materials for the field of valleytronics. However, interaction with the substrate, which is necessary to support the electronically active medium, becomes a major obstacle. In the present work, we propose a substrate (F-doped WS$_2$) that avoids detrimental effects and at the same time induces the required valley polarization, so that no further steps are needed for this purpose. The behavior is explained by proximity effects on silicene/germanene, as demonstrated by first-principles calculations. Broken inversion symmetry due to the presence of WS$_2$ opens a su…
Due to nonzero intrinsic spin-orbit interaction in buckled honeycomb crystal structures, silicene and germanene exhibit interesting topological properties, and are therefore candidates for the realization of the quantum spin Hall effect. We employ the Kane-Mele model to investigate the electron states in hexagonal silicene and germanene nanorings having either zigzag or armchair edges in the presence of a perpendicular magnetic field. We present results for the energy spectra as function of magnetic field, the electron density of the spin-up and spin-down states in the ring plane, and the calc…
Following the work in graphene, we report a first-principles study of electron-phonon coupling (EPC) in low-buckled (LB) monolayer silicene and germanene. Despite of the similar honeycomb atomic arrangement and linear band dispersion, the EPC matrix-element squares of the $Γ$-$E_g$ and K-$A_1$ modes in silicene are only about 50% of those in graphene. However, the smaller Fermi velocity in silicene compensates this reduction by providing a larger joint electronic density of states near the Dirac point. We predict that Kohn anomalies associated with these two optical modes are significant in si…
We theoretically investigated two kinds of density oscillations: the Friedel oscillation and collective excitation in the silicene and germanene within random phase approximation, and found that the tunable spin-valley coupled band structure could lead to some exotic properties in such two phenomena. Based on the exact analytical and numerical analysis, we demonstrated that the beating of screened potential as well as the undamped plasmon mode can be taken as fingerprints of topological phase transition in doped silicene and doped germanene. Thus our proposal here establishes the connection be…
The thermoelectric properties in one- and two-dimensional silicon and germanium structures have been investigated using first-principle density functional techniques and linear response for the thermal and electrical transport. We have considered here the two-dimensional silicene and germanene, together with nano-ribbons of different widths. For the nano-ribbons, we have also investigated the possibility of nano-structuring these systems by mixing silicon and germanium. We found that the figure of merit at room temperature of these systems is remarkably high, up to 2.5.
We theoretically study electrically tunable magnetoplasmons in a monolayer of silicene or germanene. We derive the dynamical response function and take into account the effects of strong spin-orbit coupling (SOC) and of an external electric filed $E_z$ perpendicular to the plane of the buckled silicene/germanene. Employing the random-phase approximation we analyze the magnetoplasmon spectrum. The dispersion relation has the same form as in a two-dimensional electron gas with the cyclotron and plasma frequencies modified due to the SOC and the field $E_z$. In the absence of SOC and $E_z$, our r…
Based on first principles calculations and self-consistent solution of linearized Boltzmann-Peierls equation for phonon transport approach within a three-phonon scattering framework, we characterize lattice thermal conductivities k of freestanding silicene, germanene and stanene under different isotropic tensile strains and temperatures. We find a strong size dependence of k for silicene with tensile strain, i.e., divergent k with increasing system size, in contrast, the intrinsic room temperature k for unstrained silicene converges with system size to 19.34 W/m-K by 178 nm. The room temperatu…
Silicene, germanene and stanene are two-dimensional topological insulators exhibiting helical edge states. We investigate global and local manipulations at the edges by exposing them to (i) a charge-density-wave order, (ii) a superconductor, (iii) an out-of-plane antiferromagnetic, and (iv) an in-plane antiferromagnetic field. We show that these perturbations affect the helical edge states in a different fashion. As a consequence one can realize quantum spin-Hall effect without edge states. In addition, these edge manipulations lead to very promising applications: a giant magnetoresistance and…
We investigate van der Waals (vdW) heterostructures made of germanene, stanene or silicene with hexagonal Boron Nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further engineered in the heterostructures, where the competition between the substrate effect and external electric fields can be used to control the tunable topological phase transitions. Using such heterostructures as building blocks, various vdW topological domain walls (DW) are designed, along which there exist valley polarized quantum spin Hall edge states or valley-…
Using a multi-orbital tight-binding model, we have studied the edge states of zigzag silicene, germanene, and stanene nanoribbons (ZSiNRs, ZGeNRs and ZSnNRs, respectively) in the presence of the Coulomb interaction and a vertical electric field. The resulting edge states have non-linear energy dispersions due to multi-orbital effects, and the nanoribbons show induced magnetization at the edges. Owing to this non-linear dispersion, ZSiNRs, ZGeNRs and ZSnNRs may not provide superior performance in field effect transistors, as has been proposed from single-orbital tight-binding model calculations…
We have calculated numerically electron exchange, correlation energies and dynamical polarization function for newly discovered silicene, germanene and black phosphorus (BP), consisting of puckered layers of elemental phosphorus atoms, broadening the range of two-dimensional (2D) materials at various temperatures. As a matter of fact, monolayer BP, produced by mechanical and liquid exfoliation techniques, has been predicted to be an insulator with a large energy splitting 1.6 eV for the quasiparticle band structure. We compare the dependence of these energies on the chemical potential, field-i…
We study the lattice thermal conductivity of two-dimensional (2D) pentagonal systems, such as penta-silicene and penta-germanene. Penta-silicene has been recently reported, while the stable penta-germanene, belonging to the same group IV element, is revealed firstly by our ab initio calculations. We find that both penta-silicene and penta-germanene at room temperature have ultralow lattice thermal conductivities $κ$ of 1.29 W/mK and 0.30 W/mK respectively. To the best of our knowledge, penta-germanene may have the lowest $κ$ in 2D crystal materials. We attribute ultralow $κ$ to the weak phonon…
By using first-principles calculations, we predict that an in-plane homogenous electrical field can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated finite ZSiNR device reveals a nearly perfect spin-filter efficiency of up to 99% while a quadruple-gated finite ZSiNR device serves as an effective spin field effect transistor (FET) with an on/off current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.
We investigate the energy dispersion of the edge states in zigzag silicene, germanene and stanene nanoribbons with and without hydrogen termination based on a multi-orbital tight-binding model. Since the low buckled structures are crucial for these materials, both the $π$ and $σ$ orbitals have a strong influence on the edge states, different from the case for graphene nanoribbons. The obtained dispersion of helical edge states is nonlinear, similar to that obtained by first-principles calculations. On the other hand, the dispersion derived from the single-orbital tight-binding model is always …
The O2 dissociation and O atoms adsorption on free-standing germanene are studied by using first-principles calculations in this letter. Compared with the spontaneous dissociation of oxygen molecule on free-standing silicene in air, germanene is more stable than silicene from kinetic point of view, with overcoming energy barrier of about 0.55 eV. Especially, in contrast with the unique chemical adsorption of O2-dissociation-induced O atoms on silicene, oxygen molecule can behave a correspondingly stable adsorption on germanene surface. Moreover, single O atom adsorption on germanene is also di…
We start with the silicene or germanene single-particle Hamiltonian in buckled 2D hexagonal lattices expressed in terms of Dirac matrices in the Weyl basis. The Hamiltonian of these systems comprises of the Dirac kinetic energy, a mass gap term, and the spin-orbit coupling. The second term breaks the sub-lattice symmetry of the honey-comb lattice structure and generates a gap. The buckled structure generates a staggered sub-lattice potential between silicon atoms at A sites and B sites for an applied electric field perpendicular to its plane. Tuning of the electric field, allows for rich behav…
Silicene and germanene derivatives constructed from periodic dumbbell units play a crucial role in multilayers of these honeycomb structures. Using first-principles calculations based on density functional theory, here we investigate the dumbbell formation mechanisms and energetics of Group IV atoms adsorbed on graphene, silicene, germanene and stanene monolayer honeycomb structures. The stabilities of the binding structures are further confirmed by performing ab-initio molecular dynamics calculations at elevated temperatures, except for stanene which is subject to structural instability upon …
We report the recent progress on the theoretical aspects of monolayer topological insulators including silicene, germanene and stanene, which are monolayer honeycomb structures of silicon, germanium and tin, respectively. They show quantum spin Hall effects in nature due to the spin orbit interaction. The band gap can be tuned by applying perpendicular electric field, which induces a topological phase transition. We also analyze the topological properties of generic honeycomb systems together with the classification of topological insulators. Phase diagram of topological insulators and superco…
Using first-principles Density Functional Theory calculations, we showed that electronic and magnetic properties of bare and Ti adatom adsorbed single-layer silicene and germanene, which are charged or exerted by a perpendicular electric field are modified to attain new functionalities. In particular, when exerted by a perpendicular electric field, the symmetry between the planes of buckled atoms is broken to open a gap at the Dirac points. The occupation of 3d-orbitals of adsorbed Ti atom changes with charging or applied electric field to induce significant changes of magnetic moment. We pred…
We study intrinsic DC spin and valley Hall conductivity in doped ferromagnetic silicene in the presence of an electric filed applied perpendicular to silicene sheet. By calculating its energy spectrum and wavefunction and by making use of Kubo formalism, we obtain a general relation for the transverse Hall conductivity which can be used to obtain spin- and valley-Hall conductivity. Our results, in the zero limit of the exchange field, reduces to the previous results. Furthermore we discuss electrically tunable spin and valley polarized transport in ferromagnetic silicene and obtain the necessa…
We investigate charge, valley, and spin transports in normal/ferromagnetic/normal silicene junc- tion. We show that the charge, valley, and spin conductances in this junction oscillate with the length of the ferromagnetic silicene. It is also found that the current through this junction is valley and spin polarized due to the coupling between valley and spin degrees of freedom, and the valley and spin polarizations can be tuned by local application of a gate voltage. In particular, we find fully valley and spin polarized current by applying the electric field. We also obtain the condition for …
We demonstrate a new quantum state of matter---valley-polarized quantum anomalous Hall effect in monolayer silicene. In the presence of extrinsic Rashba spin-orbit coupling and exchange field, monolayer silicene can host a quantum anomalous-Hall state with Chern number C=2. We find that through tuning Rashba spin-orbit coupling, a topological phase transition gives rise to a valley polarized quantum anomalous Hall state, i.e. a quantum state which exhibits electronic properties of both quantum valley-Hall effect (valley Chern number C_V=3) and quantum anomalous Hall effect with C=-1.
We study ballistic transport of Dirac electrons through a strip in silicene, when the strip is exposed to off-resonant circularly polarized light and an electric field applied perpendicular to the silicene plane. We show that the conductance through the strip is spin- or/and valley-polarized. This can be explained by spin-valley coupling in silicene, and modification of its band structure through virtual absorption/emission processes and also by the perpendicular electric field. The spin- (valley-) polarization can be enhanced by tuning the light intensity and the value of the perpendicular el…
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, …
We consider Berry phase mediated Nernst effect in silicene. The low energy band structure of silicene consists of two valleys near the Dirac points, similar to graphene. The low energy transport properties of the quasiparticles can be described as Berry phase dependent phenomena. By contrast to graphene, silicene has strong spin-orbit interaction leading to opening of the gap in the energy spectrum and spin-splitting of the bands in each valley. If an electric field is applied perpendicular to the silicene sheet, it allows tunability of the gap. \ We show that this results in Berry-phase-suppo…
We propose an experimental scheme to realize adiabatic topological spin and valley pumping by using silicene subject to an in-plane $ac$ electric field with amplitude $E_{y}$ and a vertical electric field consisting of an electrostatic component and an $ac$ component with amplitudes $E_{z}^{0}$ and $E_{z}^{1}$. By tuning $E_{z}^{0}$ and $E_{z}^{1}$, topological valley pumping or spin-valley pumping can be achieved. The noisefree valley and spin currents generated could be useful in valleytronic and spintronic applications. This work demonstrates that bulk topological spin or valley pumping is …
Silicene is a buckled monolayer of silicon. Its electronic properties are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has the potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit interaction. We find for silicene a valley polarized quantum Hall effect and topological insulator phase transitions. We use the Kubo formalism to discuss the Hall conductivity and address the longitudinal conductivity for elastic impurity scat…
We investigate charge conductance and spin and valley polarization along with the tunnelling magneto-resistance (TMR) in silicene junctions composed of normal silicene and ferromagnetic silicene. We show distinct features of the conductances for parallel and anti-parallel spin configurations and the TMR, as the ferromagnetic-normal-ferromagnetic (FNF) junction is tuned by an external electric field. We analyse the behavior of the charge conductance and valley and spin polarizations in terms of the independent conductances of the different spins at the two valleys and the band structure of ferr…
We study spin-valley and lattice-pseudo spin currents in a dual ferromagnetic-gated silicene-based junction. Silicene has buckled atomic structure which allows us to take sublattice-dependent ferromagnetism into account in the investigation. One of the study results show that transmission at the junctions exhibits anisotropic property only in anti-parallel cases. Interestingly, the studied junctions can be switched from a pure spin-polarizer to a pure valley-polarizer by reversing directions of exchange fields in the parallel junctions. The perfect control of spin-valley currents can be done o…
We investigate the Goos-Hänchen shift for ballistic electrons (i) reflected from a step-like inhomogeneity of the potential energy and (or) effective mass, and (ii) transmitted through a ferromagnetic barrier region in monolayer silicene or gapped graphene. For the electrons reflected from a single interface we found that the Goos-Hänchen shift is valley-polarized for gapped graphene structure, and valley- and spin-polarized for silicene due to the spin-valley coupling. Incontrast, for example, to gapless graphene the lateral beam shift in gapped structures occurs not only in the case of total…
We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modulation of val…
We study massive Dirac fermion tunneling through time periodic potential in a silicene-based N-TP-N junction, where Ns are normal silicene regions and TP is the time periodic potential barrier. The fermions would absorb or emit photons due to the presence of the Floquet sidebands created in the TP. The nearly perfect spin-valley-sideband filtering is predicted. Applying only the exchange field leads to just only the electron absorbing a single photon almost purely allowed to tunnel through the junction for the large electric field. Reversing direction of electric field can select spin of the a…
Based on DFT+U and Berry curvature calculations, we study the electronic structures and topological properties of 3d transition metal (TM) atom (from Ti to Co) adsorbed germanene (TM-germanene). We find that valley-polarized anomalous hall effect (VAHE) can be realized in germanene by adsorbing Cr, Mn, or Co atom on its surface. A finite valley hall voltage can be easily detected in its nanoribbon, which is important for valleytronics devices. Moreover, different valley-polarized current and even reversible valley Hall voltage can be archived by shifting the Fermi energy of the systems. Such v…
We calculate the magneto-optical conductivity and electronic density of states for silicene, the silicon equivalent of graphene, and similar crystals such as germanene. In the presence of a perpendicular magnetic field and electric field gating, we note that four spin- and valley-polarized levels can be seen in the density of states and transitions between these levels lead to similarly polarized absorption lines in the longitudinal, transverse Hall, and circularly polarized dynamic conductivity. While previous spin and valley-polarization predicted for the conductivity is only present in the …
We study single and double quantum dots defined electrostatically within silicene. The spin-valley structure of the confined single- and two-electron system is determined and the effects of the intervalley scattering induced by the crystal edge and the Coulomb interaction are quantified. The states in a double quantum system are discussed in the context of the spatial symmetry of the single- and two-electron extended orbitals. We determine the charge, spin and valley transitions times induced by alternate electric fields of the microwave frequency. The valley transition times can be controlled…
Magnetic silicene superlattices (MSSLs) are versatile structures with spin-valley polarization and tunneling magnetoresistance (TMR) capabilities. However, the oscillating transport properties related to the superlattice periodicity impede stable spin-valley polarization states reachable by reversing the magnetization direction. Here, we show that aperiodicity can be used to improve the spin-valley polarization and TMR by reducing the characteristic conductance oscillations of periodic MSSLs (P-MSSLs). Using the Landauer-Büttiker formalism and the transfer matrix method, we investigate the spi…
We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain, with an exchange field induced by adjacent top and bottom magnetic insulators, while the second comprises of two ferromagnetic stripes which produces a delta-function fringe magnetic field, and a gate electrode to modify the electrochemical potential. For the first region, we investigated the effect of the uniaxial strain in inducing angular separation of the two valley spins in momentum-space, and further spin sepa…
We study a cluster of quantum dots defined within silicene that host confined electron states with spin and valley degrees of freedom. Atomistic tight-binding and continuum Dirac approximation are applied for few-electron system in quest for spontaneous valley polarization driven by inter-dot tunneling and electron-electron interaction, i.e. a valley counterpart of itinerary Nagaoka ferromagnetic ordering recently identified in GaAs square cluster of quantum dots with three excess electrons [P. Dehollain, {\it et al.}, Nature {\bf 579}, 528 (2020)]. We find that for Hamiltonian without intrins…
We study the hybrid excitations due to the coupling between surface optical phonons of a polar insulator substrate and plasmons in the valley-spin-polarized metal phase of silicene under an exchange field. We perform the calculations within the generalized random-phase approximation where the plasmon-phonon coupling is taken into account by the long-range Fr$\ddot{\mathrm{o}}$hlich interaction. Our investigation on two hybridized plasmon branches in different spin and valley subbands shows distinct behavior compared to the uncoupled case. Interestingly, in one valley, it is found that while th…
We theoretically demonstrate a simple way to significantly enhance the spin/valley polarizations and tunnel- ing magnetoresistnace (TMR) in a ferromagnetic-normal-ferromagnetic (FNF) silicene junction by applying a circularly polarized light in off-resonant regime to the second ferromagnetic (FM) region. We show that the fully spin-polarized current can be realized in certain ranges of light intensity. Increasing the incident energy in the presence of light will induce a transition of perfect spin polarization from positive to negative or vice versa depending on magnetic configuration (paralle…
Considering the difference of energy bands in graphene and silicene, we put forward a new model of the graphene-silicene-graphene (GSG) heterojunction. In the GSG, we study the valley polarization properties in a zigzag nanoribbon in the presence of an external electric field. We find the energy range associated with the bulk gap of silicene has a valley polarization more than 95%. Under the protection of the topological edge states of the silicene, the valley polarization remains even the small non-magnetic disorder is introduced. These results have certain practical significance in applicati…
The role of staggered potential on light-induced spin and pseudo-spin polarization has been investigated in silicene. It has been shown that non-equilibrium spin and pseudo-spin polarizations are emerged in silicene sheet by applying an external perpendicular electric field in the presence of circularly polarized light emission. This electric field results in pseudo-spin resolved states very close to the Dirac points therefore could be considered as a pseudomagnetic field. It has been shown that staggered potential induced spin-valley locking and pseudo-spin resolved bands are responsible for …
We study ballistic transport of Dirac fermions in silicene through arrays of barriers, of width $d$, in the presence of an exchange field $M$ and a tunable potential of height $U$ or depth $-U$. The spin- and valley-resolved conductances as functions of $U$ or $M$, exhibit resonances away from the Dirac point (DP) and close to it a pronounced dip that becomes a gap when a critical electric field $E_z$ is applied. This gap widens by increasing the number of barriers and can be used to realize electric field-controlled switching of the current. The spin $p_s$ and valley $p_v$ polarizations of th…
The discovery of intriguing properties related to the Dirac states in graphene has spurred huge interest in exploring its two-dimensional group-IV counterparts, such as silicene, germanene, and stanene. However, these materials have to be obtained via synthesizing on substrates with strong interfacial interactions, which usually destroy their intrinsic $π$($p_z$)-orbital Dirac states. Here we report a theoretical study on the existence of Dirac states arising from the $p_{x,y}$ orbitals instead of $p_z$ orbitals in silicene on 4H-SiC(0001), which survive in spite of the strong interfacial inte…
We study spin and valley transports in junctions composed of silicene and topological crystalline insulators. We consider normal/magnetic/normal Dirac metal junctions where a gate electrode is attached to the magnetic region. In normal/antiferromagnetic/normal silicene junction, we show that the current through this junction is valley and spin polarized due to the coupling between valley and spin degrees of freedom, and the valley and spin polarizations can be tuned by local application of a gate voltage. In particular, we find a fully valley and spin polarized current by applying the electric…
Valley-based electronics, known as valleytronics, is one of the keys to break through to a new stage of electronics. The valley degree of freedom is ubiquitous in the honeycomb lattice system. The honeycomb lattice structure of silicon called silicene is an fascinating playground of valleytronics. We investigate topological phases of silicene by introducing different exchange fields on the $A$ and $B$ sites. There emerges a rich variety of topologically protected states each of which has a characteristic spin-valley structure. The single Dirac-cone semimetal is such a state that one gap is clo…
Silicene systems, due to the buckled structure of the lattice, manifest remarkable intrinsic spin-orbit interaction triggering a topological phase transition in the low-energy regime. Thus, we found that protected edge states are present in silicene antidots and dots, being polarized in valley-spin pairs. We have also studied the effect of the lattice termination on the properties of the single electron energy levels and electron density distribution of silicene antidots and dots situated in a perpendicular magnetic field. Our calculations confirmed that the topological edge states are propaga…
In the presence of extrinsic Rashba spin-orbit coupling, we find that silicene can host a new quantum anomalous Hall state with spin- and valley-polarized edge states, which can be effectively controlled by the exchange field and electric field. In this new state, the pair of nontrivial edge states reside in one specific valley and have a strong but opposite spin polarization. A distinctive feature of this new state is that both of the spin and valley index of the edge states can be switched by reversing the electric field. We also present a microscopic mechanism for the origination of the new…
Silicene (a monolayer of silicon atoms) is a topological insulator, which undergoes a topological phase transition to a band insulator under an external electric field. The spin polarization is unique and opposite at the K and K' points due to the spin-orbit coupling. Accordingly, silicene exhibits a strong circular dichroism with respect to optical absorption, obeying a certain spin-valley selection rule. It is remarkable that this selection rule is drastically different between these two types of insulators owing to a band inversion taking place at the phase transition point. Hence we can te…
The magneto-optical longitudinal, transverse Hall and circularly-polarized response of silicene and other materials described by a Kane-Mele Hamiltonian are calculated. Particular attention is paid to the effects of an external electric field and finite charge doping. The energy of interband transitions can be tuned by varying the electric field. The onset frequency of the absorptive peaks moves differently between the topological insulator and band insulator regimes. This may be used to verify experimentally the existence of the two insulating phases as well as provide a measure of the spin-o…
We theoretically study the superconducting proximity effect in silicene, which features massive Dirac fermions with a tunable mass (band gap), and compute the conductance across a normal/superconductor (N/S) silicene junction, the non-local conductance of an N/S/N junction, and the supercurrent flowing in an S/N/S junction. It is demonstrated that the transport processes consisting of local and non-local Andreev reflection may be efficiently controlled via an external electric field owing to the buckled structure of silicene. In particular, we demonstrate that it is possible to obtain a fully …
Silicene is a competitive and promising 2D material, possessing interesting topological, electronic and optical properties. The presence of strong spin orbit interaction in silicene and its analogues, germanene and tinene, leads to the opening of a gap in the energy spectrum and spin-splitting of the bands in each valley. We develop a general method to determine the magneto-optic response of silicene, when a Gaussian beam is incident on silicene grown on a dielectric substrate in the presence of a static magnetic field. We use a semiclassical treatment of silicene monolayer to describe the Far…
Considering finite-temperature screened electron-impurity scattering, we present a kinetic equation approach to investigate transport properties of two-dimensional massive fermions in silicene. We find that the longitudinal conductivity is always nonvanishing when chemical potential lies within the energy gap. This residual conductivity arises from interband correlation and strongly depends on strength of electron-impurity scattering. We also clarify that the electron-impurity interaction makes substantial contributions to the spin- and valley-Hall conductivities, which, however, are almost in…
