The role of staggered potential on light-induced spin and pseudo-spin polarization has been investigated in silicene. It has been shown that non-equilibrium spin and pseudo-spin polarizations are emerged in silicene sheet by applying an external perpendicular electric field in the presence of circularly polarized light emission. This electric field results in pseudo-spin resolved states very close to the Dirac points therefore could be considered as a pseudomagnetic field. It has been shown that staggered potential induced spin-valley locking and pseudo-spin resolved bands are responsible for enhancement of the spin and pseudo-spin polarizations. Meanwhile, spin-valley locking suggests a coexistence of both spin and valley polarizations with nearly identical population imbalance at low Fermi energies which could be employed for magnetic detection of the valley polarization. It has been shown that spin-valley locking results in protection of the spin polarizations against the relaxations in elastic scattering regime. In addition results indicate that the pseudo-spin current can be generated by the circularly polarized light which could be explained by asymmetric light absorption of the states in k-space.
Magnetic silicene superlattices (MSSLs) are versatile structures with spin-valley polarization and tunneling magnetoresistance (TMR) capabilities. However, the oscillating transport properties related to the superlattice periodicity impede stable spin-valley polarization states reachable by reversing the magnetization direction. Here, we show that aperiodicity can be used to improve the spin-valley polarization and TMR by reducing the characteristic conductance oscillations of periodic MSSLs (P-MSSLs). Using the Landauer-Büttiker formalism and the transfer matrix method, we investigate the spi…
The geometric, electronic, magnetic, thermal, and optical properties of transition metal (TM) doped silicene are systematically explored using spin-dependent density functional computation. We find that the TM atoms decrease the buckling degree of the silicene structure caused by the interaction between the dopant TM atoms and the Si atoms in the silicene layer plane which is quite strong. In some TM-silicenes, parallel bands and the corresponding van Hove singularities are observed in the electronic band structure without and with spin-polarization. These parallel bands are the origin of most…
Graphene is a two-dimensional (2D) semimetal with high mobility in charge carriers due to the existence of Dirac points. Silicene is another promising material, with properties analog to graphene. Many silicon (Si) based electronic devices can be integrated via graphene-silicene (Gra/si) hybrid structures. These electronic applications are mostly based on the ability to tune the bandgap via electronic structure deformation that is expected to be achieved by multilayer stacking, applying a transverse external electric field (EF), and altering interfacial distance. In this work, we investigate t…
Silicene consists of a monolayer of silicon atoms in a buckled honeycomb structure. It was recently discovered that the symmetry of such a system allows for interesting Rashba spin-orbit effects. A perpendicular electric field is able to couple to the sublattice pseudospin, making it possible to electrically tune and close the band gap. Therefore, external electric fields may generate a topological phase transition from a topological insulator to a normal insulator (or semimetal) and vice versa. The contribution of the present article to the study of silicene is twofold: First, we perform a gr…
In this work we analyze the effects of the application of an external electric field in the formation of a local magnetic moment in silicene. By adding an impurity in a top site in the host lattice and computing the real and imaginary part of the self-energy of the impurity energy level, the polarized density of states is used in order to obtain the occupation number of the up and down spin formation in the impurity considering the mean field approximation. Unequal occupation numbers is the precursor of a formation of a local magnetic moment and this depends critically on the Hubbard parameter…
We study the band structure and transport properties of ferromagnetic tetragonal silicene nanoribbons by using the non-equilibrium Green's function method. The band structure and spin-dependent conductance are discussed under the combined effect of the external electric field, potential energy, exchange field and the spin-orbit coupling. One can easily realize a phase transition from a semimetallic to a semiconducting state by changing the transverse width of the nanoribbon. Separation of spin-dependent conductances arises from the effect of exchange field and the spin-orbit coupling, while ze…
The transconductance and effective Landé $g^*$ factors for a quantum point contact defined in silicene by the electric field of a split gate is investigated. The strong spin-orbit coupling in buckled silicene reduces the $g^*$ factor for in-plane magnetic field from the nominal value 2 to around 1.2 for the first- to 0.45 for the third conduction subband. However, for perpendicular magnetic field we observe an enhancement of $g^*$ factors for the first subband to 5.8 in nanoribbon with zigzag and to 2.5 with armchair edge. The main contribution to the Zeeman splitting comes from the intrinsic …
