磁场中硅烯反量子点和量子点的边缘保护态
Protected edge states in silicene antidots and dots in magnetic field
摘要：
硅烯体系，由于晶格的屈曲结构，表现出显着的内在自旋轨道相互作用触发拓扑相变在低能区。因此，我们发现，受保护的边缘状态存在于硅烯反点和点，被极化的谷自旋对。我们还研究了晶格终止对硅烯反点和垂直磁场中硅烯点的单电子能级和电子密度分布的影响。我们的计算证实，拓扑边缘状态传播的antidot/点的周长为理想或现实的边缘终止包含粗糙度的原子长度尺度。然而，当反点或点具有粗糙边缘时，作为磁场的函数的能量线的谷极化和斜率减小。
英文摘要：
Silicene systems, due to the buckled structure of the lattice, manifest remarkable intrinsic spin-orbit interaction triggering a topological phase transition in the low-energy regime. Thus, we found that protected edge states are present in silicene antidots and dots, being polarized in valley-spin pairs. We have also studied the effect of the lattice termination on the properties of the single electron energy levels and electron density distribution of silicene antidots and dots situated in a perpendicular magnetic field. Our calculations confirmed that the topological edge states are propagating over the perimeter of the antidot/dot for both ideal or realistic edge termination containing roughness on the atomic length scale. The valley polarization and the slope of the energy line as a function of the magnetic field is, however, reduced when the antidot or dot has a rough edge.
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