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arXiv 1202.2636cond-mat.mes-hallcond-mat.mtrl-sci
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利用外加电场控制硅烯单分子膜的带隙

Controlling Band Gap in Silicene Monolayer Using External Electric Field

Kamal Chinnathambi

摘要:

我们用基于密度泛函理论的计算方法研究了硅烯单分子膜的几何结构和电子结构。硅烯的电子结构表明它是一种半金属,并且硅烯中的载流子在狄拉克点附近具有线性色散,表现出类似于无质量的狄拉克-费米子的行为。结果表明,外加电场可以破坏硅烯单分子膜的反转对称性,使其带隙在费米能级打开。硅烯几何结构中的屈曲在破坏反转对称性中起着重要作用。我们还表明,带隙的变化与外部电场的强度线性。此外,带隙值可以在很宽的范围内调节。

英文摘要:

We study the geometric and electronic structures of silicene monolayer using density functional theory based calculations. The electronic structures of silicene show that it is a semi-metal and the charge carriers in silicene behave like massless Dirac-Fermions since it possesses linear dispersion around Dirac point. Our results show that the band gap in silicene monolayer can be opened up at Fermi level due to an external electric field by breaking the inversion symmetry. The presence of buckling in geometric structure of silicene plays an important role in breaking the inversion symmetry. We also show that the band gap varies linearly with the strength of external electric field. Further, the value of band gap can be tuned over a wide range.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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