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arXiv 1306.3310cond-mat.mtrl-sci
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用低能电子衍射和表面X射线衍射研究Bi2Se3(111)的表面结构

Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface X-ray diffraction

Diogo Duarte dos Reis, Lucas Barreto, Marco Bianchi, Guilherme Almeida Silva Ribeiro, Edmar Avellar Soares, Wendell Simoes e Silva, Vagner Eustaquio de Carvalho… 展开作者

Diogo Duarte dos Reis, Lucas Barreto, Marco Bianchi, Guilherme Almeida Silva Ribeiro, Edmar Avellar Soares, Wendell Simoes e Silva, Vagner Eustaquio de Carvalho, Jonathan Rawle, Moritz Hoesch, Chris Nicklin, Willians Principe Fernandes, Jianli Mi, Bo Brummerstedt Iversen, Philip Hofmann

摘要:

通过低能电子衍射和室温下的表面X射线衍射确定了拓扑绝缘体Bi_2Se_3的表面结构。这两种方法都表明,晶体是由一个完整的五重层终止。具体而言,排除了通过铋双层的替代终止。通过这两种技术得到的表面弛豫是在良好的协议彼此,发现是小的。这包括前两个五重层之间的范德华能隙的弛豫。

英文摘要:

The surface structure of the prototypical topological insulator Bi2Se3 is determined by low-energy electron diffraction and surface X-ray diffraction at room temperature. Both approaches show that the crystal is terminated by an intact quintuple layer. Specifically, an alternative termination by a bismuth bilayer is ruled out. Surface relaxations obtained by both techniques are in good agreement with each other and found to be small. This includes the relaxation of the van der Waals gap between the first two quintuple layers.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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