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arXiv 1306.1893cond-mat.mes-hall
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Berry相反阻尼自旋轨道力矩的观测

Observation of a Berry phase anti-damping spin-orbit torque

H. Kurebayashi, Jairo Sinova, D. Fang, A. C. Irvine, J. Wunderlich, V. Novak, R. P. Campion, B. L. Gallagher, E. K. Vehstedt, L. P. Zarbo, K. Vyborny, A. J. Ferguson, T. Jungwirth

摘要:

最近观察到的铁磁体/正常导体界面的电流诱导磁化翻转对未来的磁存储技术有重要影响。在一种解释中,开关起源于载流子与自旋相关的散射引起的相对论反阻尼自旋轨道力矩(SOT)的结构与破缺的空间反演对称性。另一种解释结合了相对论自旋霍尔效应(SHE),使正常导体的自旋电流注入器,与非相对论自旋转移力矩(STT)的铁磁体。值得注意的是,在这些实验中的SHE起源于一个干净的晶体的能带结构中的Berry相位效应和抗阻尼STT也是基于从载流子到磁化的自旋的无序无关的转移。在这里,我们报告的观察到一个反阻尼SOT源于一个类似的贝里相位效应的SHE。因此,单独的SOT可以基于散射无关原理来诱导磁化动力学。铁磁半导体(Ga,Mn)As在晶体中具有破缺的空间反转对称性。这允许我们考虑裸铁磁元件,其通过设计消除了对自旋扭矩的任何SHE相关贡献。我们提供了一个直观的图片的Berry相起源的反阻尼SOT和微观建模的测量数据。

英文摘要:

Recent observations of current-induced magnetization switching at ferromagnet/normal-conductor interfaces have important consequences for future magnetic memory technology. In one interpretation, the switching originates from carriers with spin-dependent scattering giving rise to a relativistic anti-damping spin-orbit torque (SOT) in structures with broken space-inversion symmetry. The alternative interpretation combines the relativistic spin Hall effect (SHE), making the normal-conductor an injector of a spin-current, with the non-relativistic spin-transfer torque (STT) in the ferromagnet. Remarkably, the SHE in these experiments originates from the Berry phase effect in the band structure of a clean crystal and the anti-damping STT is also based on a disorder-independent transfer of spin from carriers to magnetization. Here we report the observation of an anti-damping SOT stemming from an analogous Berry phase effect to the SHE. The SOT alone can therefore induce magnetization dynamics based on a scattering-independent principle. The ferromagnetic semiconductor (Ga,Mn)As we use has a broken space-inversion symmetry in the crystal. This allows us to consider a bare ferromagnetic element which eliminates by design any SHE related contribution to the spin torque. We provide an intuitive picture of the Berry phase origin of the anti-damping SOT and a microscopic modeling of measured data.

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