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arXiv 2004.02649cond-mat.mes-hall

Damping-like Torque in Monolayer 1T-TaS$_2$

Sajid Husain, Xin Chen, Rahul Gupta, Nilamani Behera, Prabhat Kumar, Tomas Edvinsson, Felipe Garcia Sanchez, Rimantas Brucas, Sujeet Chaudhary, Biplab Sanyal, P… 展开作者

Sajid Husain, Xin Chen, Rahul Gupta, Nilamani Behera, Prabhat Kumar, Tomas Edvinsson, Felipe Garcia Sanchez, Rimantas Brucas, Sujeet Chaudhary, Biplab Sanyal, Peter Svedlindh, Ankit Kumar

英文摘要:

A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $Ω^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of damping-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices.

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