We study spin-orbit torques in two dimensional hexagonal crystals such as graphene, silicene, germanene and stanene. The torque possesses two components, a field-like term due to inverse spin galvanic effect and an antidamping torque originating from Berry curvature in mixed spin-$k$ space. In the presence of staggered potential and exchange field, the valley degeneracy can be lifted and we obtain a valley-dependent Berry curvature, leading to a tunable antidamping torque by controlling the valley degree of freedom. The valley imbalance can be as high as 100\% by tuning the bias voltage or magnetization angle. These findings open new venues for the development of current-driven spin-orbit torques by structural design.
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins possessing long spin diffusion lengths of hundreds of nanometers. In this work, we show that the injection of a pure valley current, induced by valley Hall effect in a WSe2 monolayer, imparts a spin torque on the magnetization of an overlaid Fe or CoFe in a tunneling structure. The torque efficiency is found to be comparable to that in conventional perpendicular ma…
Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport in bilayer graphene (BLG) superlattices encapsulated between two hexagonal boron nitride (hBN) layers, which formed hBN/BLG/hBN moiré superlattices. We then employed these superlattices to detect a long-range charge-neutral valley current using an all-electrical method. The moiré superlattice with broken inversion symmetry leads to a hot spot with Berry curvature accumulating at the charge neutral point (CNP), and it…
In monolayer hexagonal lattices, two inequivalent valleys appear in the Brillouin zone. With inversion symmetry breaking, we find chiral phonons with valley contrasting circular polarization and ionic magnetic moment. At valley centers, there is a three-fold rotational symmetry endowing phonons with a quantized pseudo angular momentum, which includes spin and orbital parts. From conservation of the pseudo angular momentum, crystal momentum and energy, selection rules in intervalley scattering of electrons by phonons are obtained. The chiral valley phonons are verified and the selection rules a…
Diffusion currents are theoretically examined in two-dimensional Dirac materials, such as those of the transition metal dichalcogenides (TMD) family. The transversal effects are analogues of the valley Hall (VHE) and photogalvanic (PGE) transport phenomena in case when the electron driving force is not an electric field but a gradient of electron density distribution in the sample. The latter can be created by a finite-sized laser spot or by the injection of electrons from other materials. We develop the theory of diffusive VHE effect assuming the anisotropic electron-short-range-impurity skew…
The topological quantum states in two-dimensional (2D) materials are fascinating subjects of research, which usually highlight electron-related systems. In this work, we present a recipe that leads to Dirac phonon states with quantized valley Berry phase in 2D hexagonal lattices by first-principles calculations. We show that candidates possessing the three-fold rotational symmetry at the corners of the hexagonal Brillouin zone host valley Dirac phonons, which are guaranteed to remain intact with respect to perturbations. We identify that such special topological features populated by Dirac pho…
We investigate van der Waals (vdW) heterostructures made of germanene, stanene or silicene with hexagonal Boron Nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further engineered in the heterostructures, where the competition between the substrate effect and external electric fields can be used to control the tunable topological phase transitions. Using such heterostructures as building blocks, various vdW topological domain walls (DW) are designed, along which there exist valley polarized quantum spin Hall edge states or valley-…
In this letter, we examine the role of Coulomb interactions in the emergence of macroscopically ordered states in graphene supported on hexagonal boron nitride substrates. Due to incommensuration effects with the substrate, graphene can develop gapped low energy modes that spatially conform into a triangular superlattice of quantum rings. In the presence of these modes, we show that Coulomb interactions lead to spontaneous formation of chiral loop currents in bulk and to macroscopic spin-valley order at zero temperature. We show that this exotic state breaks time reversal symmetry and can be d…
The recent observation [R. V. Gorbachev et al., Science {\bf 346}, 448 (2014)] of nonlocal resistance $R_\mathrm{NL}$ near the Dirac point (DP) of multiterminal graphene on aligned hexagonal boron nitride (G/hBN) has been interpreted as the consequence of topological valley Hall currents carried by the Fermi sea states just beneath the bulk gap $E_g$ induced by the inversion symmetry breaking. However, the valley Hall conductivity $σ^v_{xy}$, quantized inside $E_g$, is not directly measurable. Conversely, the Landauer-Büttiker formula, as numerically exact approach to observable nonlocal trans…
Commensuration torques in double-moiré twisted trilayer hexagonal boron nitride and graphene heterostructures
University of Seoul（首尔大学）；Sungkyunkwan University（成均馆大学）；Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学与技术研究所（ICN2，西班牙高等科学研究委员会和巴塞罗那独立科学研究所））
This is a numerical study of the conductance of an Aharonov-Bohm interferometer in a tight-binding model of graphene. Two single-mode ballistic point contacts with zigzag edges are connected by two arms of a hexagonal ring enclosing a magnetic flux $Φ$. The point contacts function as valley filters, transmitting electrons from one valley of the band structure and reflecting electrons from the other valley. We find, in the wider rings, that the magnetoconductance oscillations with the fundamental periodicity $ΔΦ=h/e$ are suppressed when the two valley filters have opposite polarity, while the s…
So far, selective excitation of a desired valley in the Brillouin zone of a hexagonal two-dimensional material has relied on using circularly polarized fields. We theoretically demonstrate a way to induce, control, and read valley polarization in hexagonal 2D materials on a few-femtosecond timescale using a few-cycle, linearly polarized pulse with controlled carrier-envelope phase. The valley pseudospin is encoded in the helicity of the emitted high harmonics of the driving pulse, allowing one to avoid additional probe pulses and permitting one to induce, manipulate and read the valley pseudos…
Rhombohedral $N = 3$ trilayer graphene on hexagonal boron nitride (TLG/BN) hosts gate-tunable, valley-contrasting, nearly flat topological bands that can trigger spontaneous quantum Hall phases under appropriate conditions of the valley and spin polarization. Recent experiments have shown signatures of C = 2 valley Chern bands at 1/4 hole filling, in contrast to the predicted value of C = 3. We discuss the low-energy model for rhombohedral N-layer graphene (N = 1, 2, 3) aligned with hexagonal boron nitride (hBN) subject to off-diagonal moire vector potential terms that can alter the valley Che…
In analogy with light refraction at optical boundary, ballistic electrons also undergo refraction when propagate across a semiconductor junction. Establishing a negative refractive index in conventional optical materials is difficult, but the realization of negative refraction in electronic system is conceptually straightforward, which has been verified in graphene p-n junctions in recent experiments. Here, we propose a model to realize double refraction and double focusing of electric current by a normal-hexagonal semiconductor junction. The double refraction can be either positive or negativ…
The moiré potential of graphene on hexagonal boron nitride (hBN) generates a supercell sufficiently large as to thread a full magnetic flux quantum $Φ_0$ for experimentally accessible magnetic field strengths. Close to rational fractions of $Φ_0$, $p/q \cdotΦ_0$, magnetotranslation invariance is restored giving rise to Brown-Zak fermions featuring the same dispersion relation as in the absence of the field. Employing a highly efficient numerical approach we have performed the first realistic simulation of the magnetoconductance for a 250 nm wide graphene ribbon on hexagonal boron nitride using…
We theoretically investigate the electronic structures of moiré superlattices arising in monolayer / bilayer graphene stacked on hexagonal boron nitride (hBN) in presence and absence of magnetic field. We develop an effective continuum model from a microscopic tight-binding lattice Hamiltonian, and calculate the electronic structures of graphene-hBN systems with different rotation angles. Using the effective model, we explain the characteristic band properties such as the gap opening at the corners of the superlattice Brillouin zone (mini-Dirac point). We also investigate the energy spectrum a…
Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic valley Hall kink states in bilayer graphene and demonstrate gate-controlled current transmission in a four-kink router device. The operations of a waveguide, a valve and a tunable electron beam splitter are demonstrated. The valley valve exploits the valley-momentum locking of the kink states and reaches an on/off ratio of 8 at zero magnetic field. A magneti…
The exploration of topological states is of significant fundamental and practical importance in contemporary condensed matter physics, for which the extension to two-dimensional (2D) organometallic systems is particularly attractive. Using first-principles calculations, we show that a 2D hexagonal triphenyl-lead lattice composed of only main group elements is susceptible to a magnetic instability, characterized by a considerably more stable antiferromagnetic (AFM) insulating state rather than the topologically nontrivial quantum spin Hall state proposed recently. Even though this AFM phase is …
Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin diffusion length, and we develop a theory of weak localisation/antilocalisation, describing the crossovers between the orthogonal, double-unitary and symplectic regimes of quantum transport in TMDCs.
The Letter reports an experimental observation of the classical version of valley polarized states in a two-dimensional hexagonal sonic crystal, where the inversion-symmetry breaking of scatterers induces an omnidirectional frequency gap. The acoustic valley states, which carry specific linear momenta and orbital angular momenta, were selectively excited by external Gaussian beams and conveniently confirmed by the pressure distribution outside the crystal, according to the criterion of momentum conservation. The vortex nature of such intriguing crystal states was directly characterized by scan…
We report on the experimental observation of topologically protected edge waves in a two-dimensional elastic hexagonal lattice. The lattice is designed to feature K point Dirac cones that are well separated from the other numerous elastic wave modes characterizing this continuous structure. We exploit the arrangement of localized masses at the nodes to break mirror symmetry at the unit cell level, which opens a frequency bandgap. This produces a non-trivial band structure that supports topologically protected edge states along the interface between two realizations of the lattice obtained thro…
We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the Europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K$^{'}$valleys in the conduction bands. Each of these valleys displays its own spin polarization and a specific spin-texture dictated by broken inversion and time-reversal symmetries, and valley-exchange and Rashba splittings as large as hundreds of meV. This provi…
Recent interest in optical analogues to the quantum spin Hall and quantum valley Hall effects is driven by the promise to establish topologically protected photonic edge modes at telecommunication and optical wavelengths on a simple platform suitable for industrial applications. While first theoretical and experimental efforts have been made, these approaches so far both lack a rigorous understanding of the nature of topological protection and the limits of backscattering immunity. We here use a generic group theoretical methodology to fill this gap and obtain general design principles for pur…
Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitt…
We perform both lattice dynamics analysis and molecular dynamics simulations to demonstrate the existence of topologically protected phonon modes in a two-dimensional, monolayer hexagonal boron nitride sheet. The topological phonon modes are found to be localized at an in-plane interface that divides the system into two regions of distinct valley Chern numbers. The dispersion of this topological phonon mode crosses over the frequency gap [1123, 1278] cm^{-1}, which is opened through analogy with the quantum valley Hall effect by breaking inversion symmetry of the boron and nitride atoms in the…
Recently, the topological physics in artificial crystals for classical waves has become an emerging research area. In this Letter, we propose a unique bilayer design of sonic crystals that are constructed by two layers of coupled hexagonal array of triangular scatterers. Assisted by the additional layer degree of freedom, a rich topological phase diagram is achieved by simply rotating scatterers in both layers. Under a unified theoretical framework, two kinds of valley-projected topological acoustic insulators are distinguished analytically, i.e., the layer-mixed and layer-polarized topologica…
Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong spin-orbit interaction and the resulting ordering of the spin-split subbands in the valence and conduction bands makes the lowest-lying excitons in WX$_2$ (X~being S or Se) spin-forbidden and optically dark. With polarization-resolved photoluminescence experiments performed on a WSe$_2$ monolayer encapsulated in a hexagonal boron nitride, we show how the intrinsi…
The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in …
The concept of ferrovalley materials has been proposed very recently. The existence of spontaneous valley polarization, resulting from ferromagnetism, in such hexagonal two-dimensional materials makes nonvolatile valleytronic applications realizable. Here, we introduce a new member of ferrovalley family with orthorhombic lattice, i.e. monolayer group-IV monochalcogenides (GIVMs), in which the intrinsic valley polarization originates from ferroelectricity, instead of ferromagnetism. Combining the group theory analysis and first-principles calculations, we demonstrate that, different from the va…
The phenomenon originating from spin-orbit coupling (SOC) provides energy-efficient strategies for spin manipulation and device applications. The broken inversion symmetry interface and resulting electric field induce a Rashba-type spin-orbit field (SOF), which has been demonstrated to generate spin-orbit torque for data storage applications. In this study, we found that spin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 at room temperature, which manifests as a negative magnetoresistance in the vertical spin valve. Quantum transmission calculations based on an effective …
Spin-transfer torque is one of the important physical quantities to understand for successful application of topological insulators to spintronics. In this paper, we present analytical expressions of the spin-transfer torques on a surface of a magnetic topological insulator by including the higher-order contributions of momentum, $k^2$-term and the hexagonal warping. We obtain six different types of the spin-transfer torque including both the field-like and the damping-like torques; the four of them appear only when the higher-order momentum contributions are included. In addition, we discuss …
Giant or tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a multilayer structure. Recently, we have proposed that these fundamental spintronic effects can be realized in collinear antiferromagnets with staggered spin-momentum exchange interaction, which generates conserved spin currents in the absence of a net equilibrium magnetization. Here we elaborate on the proposal by presenting archetype model mechanisms for the…
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structures. In the atomic configurations with hexagonal symmetry, this approach makes it possible to tailor the valleytronic properties for potential device applications. In this work, we present a multi-band theory to calculate the valley-dependent electron transport in graphene-based lateral quantum structures. As an example, we consider the structures with a single interface that exhibits an energy gap or potential discont…
We propose a general and tunable platform to realize high-density arrays of quantum spin-valley Hall kink (QSVHK) states with spin-valley-momentum locking based on a two-dimensional hexagonal topological insulator. Through the analysis of Berry curvature and topological charge, the QSVHK states are found to be topologically protected by the valley-inversion and time-reversal symmetries. Remarkably, the conductance of QSVHK states remains quantized against either nonmagnetic or long-range magnetic disorder, verified by the Green function calculations. Based on first-principles results, we show …
We report the first observation of a large spin lifetime anisotropy in bilayer graphene (BLG) fully encapsulated between hexagonal boron nitride. We characterize the out-of-plane ($τ_\perp$) and in-plane ($τ_\parallel$) spin lifetimes by oblique Hanle spin precession. At 75~K and the charge neutrality point (CNP) we observe a strong anisotropy of $τ_\perp/τ_\parallel$ = 8 $\pm$ 2. This value is comparable to graphene/TMD heterostructures, whereas our high quality BLG provides with $τ_\perp$ up to 9~ns, a more than two orders of magnitude larger spin lifetime. The anisotropy decreases to 3.5 $\…
We study spin-orbit torques and charge pumping in magnetic quasi-one dimensional zigzag nanoribbons with hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences topological phase transition from a trivial band insulator to a quantum spin Hall insulator either by tuning the magnetization direction or the intrinsic spin-orbit coupling. We find that spin-charge conversion efficiency (i.e. spin-orbit torque and charge pumping) is dramatically enhanced at the topological transition, displaying a substantial angular anisotropy.
Graphene sandwiched between semiconducting monolayers of ferromagnet Cr$_2$Ge$_2$Te$_6$ and transition-metal dichalcogenide WS$_2$ acquires both spin-orbit (SO), of valley-Zeeman and Rashba types, and exchange couplings. Using first-principles combined with quantum transport calculations, we predict that such doubly proximitized graphene within van der Waals heterostructure will exhibit SO torque driven by unpolarized charge current. This system lacking spin Hall current, putatively considered to be necessary for efficient damping-like (DL) SO torque that plays a key role in magnetization swit…
We investigate the anomalous effects due to the Berry correction and the considerable perturbations in the silicene-like hexagonal lattice system. The Berry curvature in periodic Bloch band system which related to the electromagnetic field is explored, the induced transverse anomalous velocity gives rise to the intrinsic Hall conductivity (without the vertex correction) expecially in the quantum anomalous Hall phase. The quantum anomalous Hall effect which related to the anomalous velocity term is detected, including the band avoided corssing effect and the generated special band gap. %{Enlarg…
Graphene/hBN heterostructure based Valley transistor: Dynamic Control of valley current in synchronized nonzero voltages, within the time-dependent regime
A two-dimensional honeycomb lattice harbors a pair of inequivalent valleys in the k-space electronic structure, in the vicinities of the vertices of a hexagonal Brillouin zone, K}$_{\pm}$. It is particularly appealing to exploit this emergent degree of freedom of charge carriers, in what is termed "valleytronics", if charge carrier imbalance between the valleys can be achieved. The physics of valley polarization will make possible electronic devices such as valley filter and valley valve, and optoelectronic Hall devices, all very promising for next-generation electronic and optoelectronic appl…
Impact of Valley Degeneracy on Thermoelectric Properties of Zigzag Graphene Nanoribbons with Staggered Sublattice Potentials and Transverse Electric Fields
The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of…
We start with the silicene or germanene single-particle Hamiltonian in buckled 2D hexagonal lattices expressed in terms of Dirac matrices in the Weyl basis. The Hamiltonian of these systems comprises of the Dirac kinetic energy, a mass gap term, and the spin-orbit coupling. The second term breaks the sub-lattice symmetry of the honey-comb lattice structure and generates a gap. The buckled structure generates a staggered sub-lattice potential between silicon atoms at A sites and B sites for an applied electric field perpendicular to its plane. Tuning of the electric field, allows for rich behav…
We outline an approach to endow a plain vanilla material with topological properties by creating topological bands in stacks of manifestly nontopological atomically thin materials. The approach is illustrated with a model system comprised of graphene stacked atop hexagonal-boron-nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley…
The existence of inequivalent valleys K and K' in the momentum space of two-dimensional hexagonal lattices provides a new electronic degree of freedom, the manipulation of which can potentially lead to new types of electronics, in analogy to the role played by electron spin. In materials with broken inversion symmetry, such as an electrically gated bilayer graphene, the momentum-space Berry curvature $Ω$ carries opposite sign in the K and K' valleys. A sign reversal of $Ω$ along an internal boundary of the sheet gives rise to counter-propagating one-dimensional conducting modes encoded with op…
The magnetically-induced valley-spin filtering in transition metal dichalcogenide monolayers ($MX_{2}$, where $M$=Mo, W and $X$=S, Se, Te) promises new paradigm in information processing. However, the detailed understanding of this effect is still limited, regarding its underlying transport processes. Herein, it is suggested that the filtering mechanism can be greately elucidated by the concept of metal-induced gap states (MIGS), appearing in the electrode-terminated $MX_{2}$ materials {\it i.e.} the referential filter setup. In particular, the gap states are predicted here to mediate valley- …
