We report the effect of the substrate temperature on the magnetoresistance (MR) of the C60-based spin valve (SV) devices with the sandwich configuration of La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co). The C60 interlayer deposited at different substrate temperatures resulted in four types of devices. We observed all types of devices showed a monotonic increase in MR ratio with the substrate temperature. And more interesting, an especially large MR (28.5%) were obtained in the device fabricated at higher substrate temperature, while for the other types of devices, the MR magnitudes were just about a few percent. Based on the I-V measurements, as well as SEM and AFM characteristics, we have obtained that the higher substrate temperature can cause many pits and hollows in the organic film, and these pits will increase the tunneling probability of spin-polarized carriers from one ferromagnetic electrode to the other.
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral electric-field driven strain-mediated modulation of magnetic properties in Co$/$Cu$/$Py pseudo spin valve grown on ferroelectric PMN-PT substrate. We show a decrease of the giant magnetoresistance ratio of the pseudo spin valve with increasing electric field, which is attributed to the deviation of the Co layer magnetization from the initial direction due to strai…
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that 180-degree domain walls in a strained ferroelectric film can induce p-n junctions in a graphene channel and lead to the unusual temperature and gate voltage dependences of the perpendicular modes ν of the integer quantum Hall effect. The non-integer numbers and their irregular sequence principally differ from the conventional sequence ν= 3/2, 5/3. The unusual v-…
Strain engineering with different substrate facets is promising for tuning functional properties of thin film perovskite oxides. By choice of facet, different surface symmetries and chemical bond directions for epitaxial interfaces can be tailored. Here, preparation of well-defined pseudo-cubic (111)-oriented orthorhombic substrates of DyScO3 , GdScO3 , and NdGaO3 is reported. The choice of orthorhombic facet, (011)o or (101)o , both corresponding to pseudo-cubic (111)pc , gives vicinal surfaces with single or double (111pc layer terrace step heights, respectively, impacting subsequent thin fi…
Spin lifetime anisotropy in graphene induced by the SiO2 interface
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学和纳米技术研究所（ICN2））；University of Wisconsin-Madison（威斯康星大学麦迪逊分校）；Hefei University of Technology（合肥工业大学）；University of California, Santa Cruz（加州大学圣克鲁兹分校）；Montana State University（蒙大拿州立大学）
Borophene, a monoatomic layer of boron atoms, stands out among two-dimensional (2D) materials, with its versatile properties of polymorphism, metallicity, plasmonics, superconductivity, tantalizing for physics exploration and next-generation devices. Yet its phases are all synthesized on and stay bound to metal substrates, hampering both characterization and use. The growth on the inert insulator would allow post-synthesis exfoliation of borophene, but its weak adhesion to such substrate results in a very high 2D-nucleation barrier preventing clean borophene growth. This challenge can be circu…
Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetry mismatch. Often these act in conjunction with a strong dependence on the layer thickness, especially for ultrathin layers. Moreover, as a result of these effects, the temperature dependence of the s…
In the present work, a thin film was deposited on quartz substrate by reactive RF magnetron sputtering of high purity (99.999%) aluminium target using ultra-high pure (Ar + N2) gas mixture. The percentage ratio of Ar and N2 in the gas mixture was 95% and 5%, respectively. Chemical characterization using x-ray photoelectron spectroscopy (XPS) and energy-dispersive xray (EDX) spectroscopy reveals that in the presence of dilute nitrogen, Al prefers to react with residual oxygen to form Al2O3 while the nitrogen is incorporated in it. The stoichiometry of bulk film is Al2N0.38O3.1. Magnetic and ele…
