arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1303.0573cond-mat.stat-mech
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(2+1)维单步生长模型的粗糙化过渡和普适性

Roughening transition and universality of single step growth models in (2+1)-dimensions

H. Dashti-Naserabadi, A. A. Saberi, S. Rouhani

摘要:

本文研究了由单个控制参数$p$控制的包括沉积和蒸发过程的(2+1)维晶体生长单步模型。使用广泛的数值模拟与一个相对较高的统计,我们估计各种界面指数,如粗糙度,生长和动态指数,以及各种几何和分布指数的高度集群和它们的边界(或等高度线)作为$p$的功能。我们发现,与一般的信念相反,存在一个临界值$p_c\approx 0.25$,在该临界值下,模型经历了一个粗糙化的过渡,从一个粗糙的阶段与$p<p_c$在Kardar-Parisi-Zhang(KPZ)的普适性与$p>p_c$的光滑阶段,渐近地在爱德华兹-威尔金森(EW)类。我们通过估计有效粗糙度指数及其外推到无限尺寸极限来验证我们的结论。

英文摘要:

We study (2+1)-dimensional single step model (SSM) for crystal growth including both deposition and evaporation processes parametrized by a single control parameter $p$. Using extensive numerical simulations with a relatively high statistics, we estimate various interface exponents such as roughness, growth and dynamic exponents as well as various geometric and distribution exponents of height clusters and their boundaries (or iso-height lines) as function of $p$. We find that, in contrary to the general belief, there exists a critical value $p_c\approx 0.25$ at which the model undergoes a roughening transition from a rough phase with $p<p_c$ in the Kardar-Parisi-Zhang (KPZ) universality to a smooth phase with $p>p_c$, asymptotically in the Edwards-Wilkinson (EW) class. We validate our conclusion by estimating the effective roughness exponents and their extrapolation to the infinite-size limit.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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