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arXiv 1301.4113cond-mat.mes-hallcond-mat.mtrl-sci
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具有反铁磁交换场的[111]超导材料的电调谐拓扑态

Electrically Tunable Topological State in [111] Perovskite Materials with Antiferromagnetic Exchange Field

Qi-Feng Liang, Long-Hua Wu, Xiao Hu

摘要:

基于交错电势和反铁磁交换场的能带工程,在存在内禀自旋轨道耦合的情况下,蜂窝晶格上的电子可能同时具有非零的Chern数和自旋Chern数的拓扑态.通过第一性原理计算,我们证实了该方案可以通过材料改性来实现,在钙钛矿G型反铁磁绝缘体中,沿[111]方向生长,d电子在单个弯曲的蜂窝晶格上跳跃。这种材料对于自旋电子学应用是理想的,因为它提供了自旋极化的量子化边缘电流,对磁缺陷和磁缺陷都是鲁棒的,并且自旋极化可通过反转电场来调节。

英文摘要:

A topological state with simultaneous nonzero Chern number and spin Chern number is possible for electrons on honeycomb lattice based on band engineering by staggered electric potential and antiferromagnetic exchange field in presence of intrinsic spin-orbit coupling. With first principles calculation we confirm that the scheme can be realized by material modification in perovskite G-type antiferromagnetic insulators grown along [111] direction, where d electrons hop on a single buckled honeycomb lattice. This material is ideal for spintronics applications, since it provides a spin-polarized quantized edge current, robust to both nonmagnetic and magnetic defects, with the spin polarization tunable by inverting electric field.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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