arXiv 1208.42582012-08-21cond-mat.supr-con

250 GPa下致密SiH4（H2）2的临界温度和能隙

On the critical temperature and the energy gap in dense SiH4(H2)2 at 250 GPa

R. Szczȩśniak, A. P. Durajski

备注：: 7 pages, 5 figures
发表信息：: Solid. State. Commun. 153, 26-30 (2013)
DOI：: 10.1016/j.ssc.2012.10.015

摘要：

本文计算了SiH $_4$（H $_2$）$_2$在250 GPa下的临界温度（$T_{C}$）和能隙（$2Δ(T)$）。考虑了库仑赝势值的宽范围：$μ^{\star}\in<0.1,0.3>$。从129.83 K到81.40 K，$T_{C}$随$μ^{\star}$的增加而减小。低温能隙（$T\sim 0$ K）随着库仑赝势的增加而减小，从50.96 meV增加到30.12 meV. $2Δ(0)$的高值意味着无量纲比$R_Δ\equiv 2Δ(0)/k_{B}T_{C}$明显超过经典BCS理论预测的值。在考虑的病例中：$R_Δ\in<4.55,4.29>$。由于临界温度和能隙对$μ^{\star}$的特殊依赖性，给出了$T_{C}(μ^{\star})$和$Δ(μ^{\star})$的解析表达式.

英文摘要：

The critical temperature ($T_{C}$) and the energy gap ($2Δ(T)$) for the superconductor SiH$_4$(H$_2$)$_2$ at 250 GPa have been calculated. The wide range of the Coulomb pseudopotential's values has been considered: $μ^{\star}\in<0.1,0.3>$. It has been stated that $T_{C}$ decreases together with the increase of $μ^{\star}$ from 129.83 K to 81.40 K. The low-temperature energy gap ($T\sim 0$ K) decreases together with the increase of the Coulomb pseudopotential from 50.96 meV to 30.12 meV. The high values of $2Δ(0)$ mean that the dimensionless ratio $R_Δ\equiv 2Δ(0)/k_{B}T_{C}$ significantly exceeds the value predicted by the classical BCS theory. In the considered case: $R_Δ\in<4.55,4.29>$. Due to the unusual dependence of the critical temperature and the energy gap on $μ^{\star}$, the analytical expressions for $T_{C}(μ^{\star})$ and $Δ(μ^{\star})$ have been given.

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