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arXiv 1208.4094cond-mat.mtrl-sci
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喷雾热分解法制备Sb-SnO2薄膜的结构/微结构、光学和电学研究

Structural/microstructural, optical and electrical investigations of Sb-SnO2 thin films deposited by spray pyrolysis

Sushant Gupta, B. C. Yadav, Prabhat K. Dwivedi, B. Das

摘要:

研究了以SnCl_4为前驱体制备的锑掺杂氧化锡(SnO_2)薄膜的结构、光学和电学性能随锑掺杂浓度的变化。掺杂浓度从0至1.5重量%变化。X射线衍射图谱分析表明,掺杂和未掺杂的氧化锡薄膜均为纯的四方晶系金红石相氧化锡,属于空间群P42/mnm(编号136)。用场发射扫描电子显微镜(FESEM)的表面形态检查揭示了这样一个事实,即颗粒紧密堆积,颗粒之间的孔隙/空隙是非常少的。在200至1000 nm的波长范围内记录所沉积的膜的透射光谱。观察到在初始添加Sb(直到[Sb]/[Sn] = 0.5wt.%)时,膜的透射率从57%增加到68%(在800 nm处)。然后对于更高水平的锑掺杂([Sb]/[Sn] > 0.5wt.%),其降低。发现氧化锡薄膜的薄层电阻从未掺杂薄膜的48 Ω/sq降低到锑掺杂薄膜的8 Ω/sq。

英文摘要:

The structural, optical and electrical properties of spray deposited antimony (Sb) doped tin oxide (SnO2) thin films, prepared from SnCl4 precursor, have been studied as a function of antimony doping concentration. The doping concentration was varied from 0 to 1.5 wt.% of Sb. The analysis of x-ray diffraction patterns revealed that the as deposited doped and undoped tin oxide thin films are pure crystalline tetragonal rutile phase of tin oxide which belongs to the space group P42/mnm (number 136). The surface morphological examination with field emission scanning electron microscopy (FESEM) revealed the fact that the grains are closely packed and pores/voids between the grains are very few. The transmittance spectra for as-deposited films were recorded in the wavelength range of 200 to 1000 nm. The transmittance of the films was observed to increase from 57% to 68% (at 800 nm) on initial addition of Sb (up to [Sb]/[Sn] = 0.5 wt.%) and then it is decreased for higher level of antimony doping ([Sb]/[Sn] > 0.5 wt.%). The sheet resistance of tin oxide films was found to decrease from 48 Ω/sq for undoped films to 8 Ω/sq for antimony doped films.

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