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arXiv 1206.3158cond-mat.mtrl-scicond-mat.mes-hall
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衬底和前驱体对磁铁矿薄膜磁性和磁输运性质的影响

Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films

Enio Lima, Giancarlo E. S. Brito, Christian Cavelius, Vladimir Sivakov, Hao Shen, Sanjay Mathur, Gerardo F. Goya

摘要:

研究了以[FeIIFe 2 III(OBut)8]和[Fe 2 III(OBut)6]为前驱体的化学气相沉积(CVD)法制备的纳米Fe 3 O 4薄膜的磁性和输运性质。将样品沉积在不同的基底上(即,MgO(001)、MgAl 2 O 4(001)和Al 2 O3(0001)),其厚度从50到350 nm变化。原子力显微镜分析表明,颗粒性质的样品,无论合成条件(前体和沉积温度,Tpre)和基板。尽管膜的形态相似,但发现磁性和传输性质取决于用于沉积的前体。使用[FeIIFe 2 III(OBut)8]作为前驱体导致在Verwey转变(TV)处的更低的电阻率、更高的MS和更急剧的磁化强度降低。发现电阻率的温度依赖性取决于前体和Tpr。我们发现,输运是由反铁磁反相界(AF-APB的)的密度时,[FeIIFe 2 III(OBut)8]前体和Tpre = 363 K。另一方面,晶粒边界散射似乎是主要的机制时,[Fe 2 III(OBut)6]使用。磁电阻(MR(H))在高场区(H > 796 kA/m)表现出近似的线性行为,当H = 1592 kA/m时,室温下的最大值为\sim 2-3%,与输运机制无关。

英文摘要:

We have investigated the magnetic and transport properties of nanoscaled Fe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using [FeIIFe2III(OBut)8] and [Fe2III(OBut)6] precursors. Samples were deposited on different substrates (i.e., MgO (001), MgAl2O4 (001) and Al2O3 (0001)) with thicknesses varying from 50 to 350 nm. Atomic Force Microscopy analysis indicated a granular nature of the samples, irrespective of the synthesis conditions (precursor and deposition temperature, Tpre) and substrate. Despite the similar morphology of the films, magnetic and transport properties were found to depend on the precursor used for deposition. Using [FeIIFe2III(OBut)8] as precursor resulted in lower resistivity, higher MS and a sharper magnetization decrease at the Verwey transition (TV). The temperature dependence of resistivity was found to depend on the precursor and Tpre. We found that the transport is dominated by the density of antiferromagnetic antiphase boundaries (AF-APB's) when [FeIIFe2III(OBut)8] precursor and Tpre = 363 K are used. On the other hand, grain boundary-scattering seems to be the main mechanism when [Fe2III(OBut)6] is used. The Magnetoresistance (MR(H)) displayed an approximate linear behavior in the high field regime (H > 796 kA/m), with a maximum value at room-temperature of \sim2-3% for H = 1592 kA/m, irrespective from the transport mechanism.

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