Electric control of magnetism is a vision which drives intense research on magnetic semiconductors and multiferroics. Recently, also ultrathin metallic films were reported to show magnetoelectric effects at room temperature. Here we demonstrate much stronger effects by exploiting reduction/oxidation reactions in a naturally grown oxide layer exchange coupled to an underlying ferromagnet. For the exemplarily studied FePt/iron oxide composite in an electrolyte, a large and reversible change of magnetization and anisotropy is obtained. The principle can be transferred to various metal/oxide combinations. It represents a novel approach towards multifunctionality.
We observe magnetic domain structures of MgO/CoFeB with a perpendicular magnetic easy axis under an electric field. The domain structure shows a maze pattern with electric-field dependent isotropic period. We find that the electric-field modulation of the period is explained by considering the electric-field modulation of the exchange stiffness constant in addition to the known magnetic anisotropy modulation.
The impact of an applied electric field on the exchange coupling parameters has been investigated based on first-principles electronic structure calculations by means of the KKR Green function method. The calculations have been performed for a Fe film, free-standing and deposited on two different substrates, having 1 monolayer (ML) thickness to minimize the effect of screening of the electric field typical for metallic systems. By comparing the results for the free-standing Fe ML with those for Fe on the various substrates, we could analyze the origin of the field-induced change of the exchang…
Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. In spite of the electrical modulation of insulated AFMs through coupling between their intrinsic ferroelectricity and antiferromagnetism, direct electrical control of AFM metals remains challenging due to the screening effect by the surface charge, and the manipulation is confined to a limited depth of atomic dimensions, which is insufficient to form a stable AFM exchange spring. In the present letter we primarily report a reversible electrical control…
We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2pi from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P-Pb0 distances ranging from 14 nm to 20 nm.
We demonstrated an electric field controlled exchange bias (EB) effect accompanied with unipolar resistive switching behavior in the Si/SiO2/Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in high-resistance-state while negligible EB in low-resistance-state. Conductive filaments forming and rupture in the NiO layer but near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetic-electrical random access memory de…
We have developed a new magnetoelectric material based on Ga doped α-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at room temperature and showing magneto-electric properties. The experimental results of electric field controlled magnetic state provided a direct evidence of room temperature magnetoelectric coupling in Ga doped α-Fe2O3 system. Interestingly, (un-doped) α-Fe2O3 system does not exhibit any electric field controlled magnetic exchange bias shift, but Ga doped α-Fe2O3 system has shown an extremely high electric field induced magnetic exchange bias shift up to the…
Electric-field induced trends of exchange interactions in transition-metal trilayers
Indian Institute of Science Education and Research Thiruvananthapuram（印度科学教育研究所特里凡得琅分校）；Kiel Nano, Surface, and Interface Science (KiNSIS)（基尔纳米、表面与界面科学中心）；Institute of Theoretical Physics and Astrophysics（理论物理与天体物理研究所）；School of Physics（物理学院）
The exchange coupling of two magnetic layers via a diffuse oxide interlayer is studied with an atomistic spin model. We investigate the effect of magnetic concentration and oxide layer thickness on the effective exchange coupling strength and find an exponential dependence of the coupling strength on the oxide thickness without the need for magnetic pinholes. Furthermore we show that exchange coupling has a strong temperature dependence which is significant for the reversal dynamics during heat assisted magnetic recording.
We present results of density-functional calculations on the magnetic properties of Cr, Mn, Fe and Co nano-clusters (1 to 9 atoms large) supported on Cu(001) and Cu(111). The inter-atomic exchange coupling is found to depend on competing mechanisms, namely ferromagnetic double exchange and antiferromagnetic kinetic exchange. Hybridization-induced broadening of the resonances is shown to be important for the coupling strength. The cluster shape is found to weaken the coupling via a mechanism that comprises the different orientation of the atomic d-orbitals and the strength of nearest-neighbour …
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed experimentally and analyzed theoretically in electrical Hanle effect measurement. It stems from spin-dependent scattering of electrons by neutral impurities in Si:P. The shape of this signal is not dir…
The electric field effect on magnetism was examined in the multiferroic conical magnet Mn$_2$GeO$_4$, which shows a strong coupling between ferromagnetic and ferroelectric order parameters. The systematic evaluation of the electric polarization in the multiferroic phase below 5.5 K under various field cooling conditions reveals that small magnetic fields of 0.1 T significantly reduce the required electric fields needed to reach saturation. By applying electric fields during magnetic field dependent hysteresis measurements of magnetization M and polarization P an electrically controllable excha…
The role of graphene in mediating the exchange interaction is theoretically investigated when it is placed between two ferromagnetic dielectric materials. The calculation based on a tight-binding model illustrates that the magnetic interactions at the interfaces affect not only the graphene band structure but also the thermodynamic potential of the system. This induces an indirect exchange interaction between the magnetic layers that can be considered in term of an effective exchange bias field. The analysis clearly indicates a strong dependence of the effective exchange bias on the properties…
We investigate the exchange coupling constant $J_{ij}$ in Nd$_x$Fe$_{1-x}$ amorphous alloys with different compositions within the framework of first-principles calculation. We observed a strong atomic-dependence of $J_{ij}$ and its fluctuations. We show that the composition strongly affects the distance dependence of $J_{ij}$. Composition dependence of calculated Curie temperatures is modest for $x<0.5$. To examine the effect of the local environment on the exchange couplings, we demonstrate combined analyses of the coordination structure and exchange coupling constants using the Gabriel grap…
Interlayer exchange couplings were examined for Co2FeAl0.5Si0.5(CFAS)/Cr/CFAS trilayered films grown on MgO (001) single crystal and thermally oxidized Si substrates. The films were (001) epitaxial on MgO and (110) textured polycrystalline on SiO2. Strong exchange couplings were observed for the films with the 1.5 nm thick Cr spacer layer. A 90 degree coupling is dominant in the (001) epitaxial film. In contrast, an antiparallel coupling exists in the polycrystalline one. The relationship of interlayer couplings with the structure is discussed.
A topological state with simultaneous nonzero Chern number and spin Chern number is possible for electrons on honeycomb lattice based on band engineering by staggered electric potential and antiferromagnetic exchange field in presence of intrinsic spin-orbit coupling. With first principles calculation we confirm that the scheme can be realized by material modification in perovskite G-type antiferromagnetic insulators grown along [111] direction, where d electrons hop on a single buckled honeycomb lattice. This material is ideal for spintronics applications, since it provides a spin-polarized q…
Low-dimensional semiconducting ferromagnets have attracted considerable attention due to their promising applications as nano-size spintronics. However, realizing robust ferromagnetic couplings that can survive at high temperature is restrained by two decisive factors: super-exchange couplings and anisotropy. Despite widely explored low-dimensional anisotropy, strengthening super-exchange couplings has rarely been investigated. Here, we found that ligands with lower electronegativity can strengthen ferromagnetic super-exchange couplings and further proposed the ligand modulation strategy to en…
We use atomistic tight-binding theory with a configuration interaction description of Coulomb and exchange effects to describe excitons in symmetric quantum dots in a vertical electric field. We show that field-induced manipulation of exciton orientation and phase produces a drastic reduction of fine structure splitting, an anticrossing, and a 90 degree rotation of polarization, similar to experiment. An atomistic analysis is needed to explain how exciton reorientation modifies anisotropic exchange and fine structure splitting without significantly altering other splittings.
Density-functional studies of the electronic structures and exchange interaction parameters have been performed for a series of ferromagnetic full Heusler alloys of general formula Co$_2$MnZ (Z = Ga, Si, Ge, Sn), Rh$_2$MnZ (Z = Ge, Sn, Pb), Ni$_2$MnSn, Cu$_2$MnSn and Pd$_2$MnSn, and the connection between the electronic spectra and the magnetic interactions have been studied. Different mechanisms contributing to the exchange coupling are revealed. The band dependence of the exchange parameters, their dependence on volume and valence electron concentration have been thoroughly analyzed within t…
We have studied the spin and exchange coupling of Ti atoms on a Cu$_2$N/Cu(100) surface using density functional theory. We find that individual Ti have a spin of 1.0 (i.e., 2 Bohr Magneton) on the Cu$_2$N/Cu(100) surface instead of spin-1/2 as found by Scanning Tunneling Microscope. We suggest an explanation for this difference, a two-stage Kondo effect, which can be verified by experiments. By calculating the exchange coupling for Ti dimers on the Cu$_2$N/Cu(100) surface, we find that the exchange coupling across a `void' of 3.6Å is antiferromagnetic, whereas indirect (superexchange) couplin…
A thin Hafnium film is shown to act both as an effective diffusion barrier for manganese at a thickness of 0.7 nm, and as an effective exchange coupling layer in a sandwich structure with perpendicular magnetic anisotropy. The magnetic layers are Co$_{20}$Fe$_{60}$B$_{20}$ and the low moment ferrimagnet Mn$_2$Ru$_x$Ga (MRG). The coupling changes sign at the compensation temperature of MRG and the exchange energy reaches 0.11 mJm$^{-2}$ for the thinnest Hf interlayers. Ruthenium, the usual metal of choice for coupling ferromagnetic layers in thin film heterostructures, cannot be used with the z…
Electric-field controlled magnetization dynamics is an important integrant in low power spintronic devices. In this letter, we demonstrate electric-field induced parametric excitation for CoFeB/MgO junctions by using interfacial in-plane magnetic anisotropy. When the in-plane magnetic anisotropy and the external magnetic field are parallel to each other, magnons are efficiently excited by using electric-field induced parametric excitation. Its wavelength and wavenumber are tuned by changing input power and frequency of the applied voltage. A generalized phenomenological model is developed to e…
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discussed in the manuscript. It results that thermally-induced effective exchange coupling mediated by spin-dependent on and off resonant tunnelling of electrons via localized mid-gap defect states in the ZnSe…
Multilayer edge molecular spintronics device (MEMSD) approach can produce novel logic and memory units for the computers. MEMSD are produced by bridging the molecular channels across the insulator, in the exposed edge region(s) of a magnetic tunnel junction (MTJ). The bridged molecular channels start serving as the dominant exchange coupling medium between the two ferromagnetic electrodes of a MTJ. Present study focus on the effect of molecule enhanced exchange coupling on the magnetic properties of the MTJ. This paper shows that organometallic molecular clusters (OMCs) strongly increased the …
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of ferromagnetic layer via electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here we demonstrate a bipolar electric field effect switching of 100-nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ~1.1x10^5 A/cm^2, is one order of magni…
We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and the hyperfine interaction - both crucial components …
Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic coupling. However, to date, the electrical gate-controlled EB effect has yet to be realized in vdW heterostructures. Here, for the first time, we realized electrically-controllable EB effects in a vdW antiferromagnetic (AFM)-ferromagnetic (FM) heterostructure, FePS3-Fe5GeTe2. For pristine FePS3-Fe5GeTe2 heterostructures, sizable EB effects can be generated d…
Thermal control of exchange coupling between two strongly ferromagnetic layers through a weakly ferromagnetic Ni-Cu spacer and the associated magnetoresistance is investigated. The spacer, having a Curie point slightly above room temperature, can be cycled between its paramagnetic and ferromagnetic states by varying the temperature externally or using joule heating. It is shown that the giant magnetoresistance vanishes due to a strong reduction of the mean free path in the spacer at above ~30 % Ni concentration -- before the onset of ferromagnetism. Finally, a device is proposed and demonstrat…
We report on the growth and functional characterization of epitaxial thin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxial YMnO3 films (0001) textured are obtained. An atomic force microscope has been used to polarize electric domains revealing the ferroelectric nature of the film. When a Permalloy layer is grown on top of the YMnO3(0001) film, clear indications of exchange bias and enhanced coercivity are observed at low temperature. The observation of coexisting antiferromagnetism and electrical polarization suggests that the biferro…
The influence of a c(2x2) ordered interface alloy of 3d transition metals at the ferromagnet/nonmagnet interface on interlayer exchange coupling (IXC), the formation of quantum well states (QWS) and the phenomenon of Giant MagnetoResistance is investigated. We obtained a strong dependence of IXC on interface alloy formation. The GMR ratio is also strongly influenced. We found that Fe, Ni and Cu alloys at the interface enhance the GMR ratio for in-plane geometry by nearly a factor of 2.
Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use a mean-field theory of carrier induced ferromagnetism to explore possible (Ga,Mn)As based multilayer structures that might yield antiferromagnetic coupling.
The interlayer spin correlations in the magnetic/non-magnetic semiconductor superlattices are reviewed. The experimental evidences of interlayer exchange coupling in different all-semiconductor structures, based on neutronographic and magnetic studies, are presented. A tight-binding model is used to explain interaction transfer across the non-magnetic block without the assistance of carriers in ferromagnetic EuS/PbS and antiferromagnetic EuTe/PbTe systems.
Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to magneto-ionically and electrically tune exchange bias in Gd/Ni$_{1-x}$Co$_{x}$O thin films (x=0.50, 0.67), where neither of the layers alone is ferromagnetic at room temperature. The Gd capping layer deposited onto antiferromagnetic Ni$_{1-x}$Co$_{x}$O initiates a solid-state redox reaction that reduces an interfacial region of the oxide to ferromagnetic NiCo. Exchange bias…
We report on the exchange bias between antiferromagnetic and ferroelectric hexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode (Pt) and a soft ferromagnetic layer (Py). Anisotropic magnetoresistance measurements are performed to monitor the presence of an exchange bias field. When the heteroestructure is biased by an electric field, it turns out that the exchange bias field is suppressed. We discuss the dependence of the observed effect on the amplitude and polarity of the electric field. Particular attention is devoted to the role of current leakage across the ferroel…
This paper contains the notes of lectures on the theory of interlayer exchange coupling presented at the 30-th Ferienschule of the Institut fuer Festkoerperforschung, Forschungszentrum Juelich, March 1999.
We investigate theoretically the effect of nearby As (arsenic) vacancies on the magnetic properties of substitutional Mn (manganese) impurities on the GaAs (110) surface, using a microscopic tight-binding model which captures the salient features of the electronic structure of both types of defects in GaAs. The calculations show that the binding energy of the Mn-acceptor is essentially unaffected by the presence of a neutral As vacancy, even at the shortest possible ${\rm V}_{\rm As}$--Mn separation. On the other hand, in contrast to a simple tip-induced-band-bending theory and in agreement wi…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a linear-in-voltage dependence of interlayer exchange coupling enables the effective perpendicular anisotropy barrier to be lowered for both voltage polarities. This mechanism is shown to reduce the critical switching current and effective activation energy. Finally, we analyze the possibility of having switching via interlayer exchange coupling only.
The equilibrium structure and exchange constants of CaMnO$_3$ and LaMnO$_3$ have been investigated using total energy unrestricted Hartree-Fock (UHF) and localised orbital configuration interaction (CI) calculations on the bulk compounds and Mn$_2$O$_{11}^{14-}$ and Mn$_2$O$_{11}^{16-}$ clusters. The predicted structure and exchange constants for CaMnO$_3$ are in reasonable agreement with estimates based on its Néel temperature. A series of calculations on LaMnO$_3$ in the cubic perovskite structure shows that a Hamiltonian with independent orbital ordering and exchange terms accounts for the …
In this paper, we have found a family of intermetallic compounds YMn12-xFex (x = 6.6-8.8) showing a bulk form of tunable giant exchange bias effect which arises from global interactions among ferromagnetic (FM) and antiferromagnetic (AFM) sublattices but not the interfacial exchange coupling or inhomogeneous magnetic clusters. A giant exchange bias with a loop shift up to 6.1 kOe has been observed in YMn4.4Fe7.6 compound with the strongest competing magnetic interactions. In a narrow temperature range, the exchange bias field shows a sudden switching off whereas the coercivity shows a sudden s…
We use spin-density-functional theory (SDFT) ab initio calculations to theoretically explore the possibility of achieving useful gate control over exchange coupling between cobalt clusters placed on a graphene sheet. By applying an electric field across supercells we demonstrate that the exchange interaction is strongly dependent on gate voltage, but find that it is also sensitive to the relative sublattice registration of the cobalt clusters. We use our results to discuss strategies for achieving strong and reproducible magneto-electric effects in graphene/transition-metal hybrid systems.
We performed first-principle calculations on the exchange interaction (EI) between atoms in BCC-Fe strained volumetrically. Our results show that the volume-dependence of the EI deviates considerably from the Bethe-Slater curve. This behavior is discussed in terms of the on-site and/or inter-site direct exchange interactions between electrons.
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive candidates in that respect as such systems bring together the properties of the isolated constituents: They are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semi…
Electric-field noise from the surfaces of ion-trap electrodes couples to the ion's charge causing heating of the ion's motional modes. This heating limits the fidelity of quantum gates implemented in quantum information processing experiments. The exact mechanism that gives rise to electric-field noise from surfaces is not well-understood and remains an active area of research. In this work, we detail experiments intended to measure ion motional heating rates with exchangeable surfaces positioned in close proximity to the ion, as a sensor to electric-field noise. We have prepared samples with …
The ultrastrong coupling of (quasi-)particles has gained considerable attention due to its application potential and richness of the underlying physics. Coupling phenomena arising due to electromagnetic interactions are well explored. In magnetically ordered systems, the quantum-mechanical exchange-interaction should furthermore enable a fundamentally different coupling mechanism. Here, we report the observation of ultrastrong intralayer exchange-enhanced magnon-magnon coupling in a compensated ferrimagnet. We experimentally study the spin dynamics in a gadolinium iron garnet single crystal us…
We present a detailed magnetic study of the Pr1/3Ca2/3MnO3 manganite, where we observe the presence of small ferromagnetic (FM) domains (diameter ~ 10A) immersed within the charge-ordered antiferromagnetic (AFM) host. Due to the interaction of the FM nanodroplets with a disordered AFM shell, the low-temperature magnetization loops present exchange bias (EB) under cooling in an applied magnetic field. Our analysis of the cooling field dependence of the EB yields an antiferromagnetic interface exchange coupling comparable to the bulk exchange constant of the AFM phase. We also observe training e…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device conception. In such device an electric bias realizes the writing bits instead a magnetic field of remote word line with high energy consumption. Interplay of two graphene mediated exchange bias fields applied to different sides of free ferromagnet results in programable logic operations that depends on specific realization of the structure.
We propose a method for the evaluation of magnetic exchange couplings based on noncollinear spin-density functional calculations. The method employs the second derivative of the total Kohn-Sham energy of a single reference state, in contrast to approximations based on Kohn-Sham total energy differences. The advantage of our approach is twofold: It provides a physically motivated picture of the transition from a low-spin to a high-spin state, and it utilizes a perturbation scheme for the evaluation of magnetic exchange couplings. The latter simplifies the way these parameters are predicted usin…
This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between the ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction based molecular spintronics devices (MTJMSDs), which were prepared by chemically bonding the paramagnetic molecules between the FM electrodes along the exposed side edges of magnetic tunnel junctions, exhibited molecule induced strong antiferromagnetic coupling. Our MC studies focused on the atomic model analogous to the MTJMSD and studied the effect of molecu…
We have calculated the chemical trend of magnetic exchange parameters ($J_{dd}$, $N α$, and $N β$) of Zn-based II-VI semiconductors ZnA (A=O, S, Se, and Te) doped with Co or Mn. We show that a proper treatment of electron correlations by the LSDA+$U$ method leads to good agreement between experimental and theoretical values of the nearest-neighbor exchange coupling $J_{dd}$ between localized 3$d$ spins in contrast to the LSDA method. The exchange couplings between localized spins and doped electrons in the conduction band $N α$ are in good agreement with experiment as well. But the values for …
The response of an infinite, periodic, insulating, solid to an infinitesimally small electric field is investigated in the framework of Density Functional Theory. We find that the applied perturbing potential is not a unique functional of the periodic density change~: it depends also on the change in the macroscopic {\em polarization}. Moreover, the dependence of the exchange-correlation energy on polarization induces an exchange-correlation electric field. These effects are exhibited for a model semiconductor. We also show that the scissor-operator technique is an approximate way of bypassing…
In the asymptotic limit, the interlayer exchange coupling decays as $D^{-2}$, where $D$ is the spacer thickness. A systematic procedure for calculating the preasymptotic corrections, i.e., the terms of order $D^{-n}$ with $n \ge 3$, is presented. The temperature dependence of the preasymptotic corrections is calculated. The results are used to discuss the preasymptotic corrections for the Co/Cu/Co(001) system.
We show that very large paramagnetic moments are created in ultrathin Pd layers through indirect interlayer exchange coupling. Pd $L$-edge x-ray magnetic circular dichroism measurements show Pd moments in [Pd(2.5nm)/Cu(3nm)/Ni$_{81}$Fe$_{19}$(5nm)/Cu(3nm)]$_{20}$ superlattices which are ferromagnetically aligned with the applied field and nearly 3% the size of Pd moments created in directly exchange coupled [Pd(2.5nm)/Ni$_{81}$Fe$_{19}$(5nm)]$_{20}$ superlattices. The induced moment is two orders of magnitude larger than that expected from RKKY exchange acting on the bulk paramagnetic suscepti…
It is shown that the current-perpendicular-to-plane giant magneto-resistance (CPP-GMR) oscillations, in the ballistic regime, are strongly correlated with those of the exchange coupling (J). Both the GMR and J are treated on equal footing within a rigorously solvable tight-binding single-band model. The strong correlation consists in sharing asymptotically the same period, determined by the spacer Fermi surface, and oscillating with varying spacer thickness predominantly in opposite phases.
