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arXiv 1206.0776cond-mat.mes-hallcond-mat.str-el
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铁磁-拓扑绝缘体平面结构中的静电控制磁化旋转

Electrostatically Controlled Magnetization Rotation in Ferromagnet-Topological Insulator Planar Structures

Yuriy G Semenov, Xiaopeng Duan, Ki Wook Kim

摘要:

提出并研究了拓扑绝缘体(TI)与相邻铁磁绝缘体(FMI)混合结构中$90^{\circ}$磁化旋转的静电控制方法。该概念基于TI电子能量随平面内到平面外FMI磁化转向的变化。计算明确暴露的电控制的单轴磁各向异性,这取决于近端交换相互作用和TI表面电子密度的形式的自由能可变性的影响。结合固有的各向异性,当TI化学势在狄拉克点附近$\pm$ 100 meV范围内变化时,可以实现面内到面外方向的磁化旋转,旋转时间为1.7~2.7 ns.当偏置被撤销时,小信号电流可以将面外磁化不稳定状态定向到面内易磁化轴的期望方向,从而该结构可以为低能量非易失性存储器原型奠定基础。

英文摘要:

An approach to the electrostatic control of $90^{\circ}$ magnetization rotation in the hybrid structures composed of topological insulators (TIs) and adjacent ferromagnetic insulators (FMI) is proposed and studied. The concept is based on TI electron energy variation with in-plane to put-of plane FMI magnetization turn. The calculations explicitly expose the effect of free energy variability in the form of the electrically controlled uniaxial magnetic anisotropy, which depends on proximate exchange interaction and TI surface electron density. Combining with inherent anisotropy, the magnetization rotation from in-plane to out-of-plane direction is shown to be realizable for 1.7~2.7 ns under the electrical variation of TI chemical potential in the range $\pm$ 100 meV around Dirac point. When bias is withdrawn a small signal current can target the out-of-plane magnetization instable state to the desirable direction of in-plane easy axis, thus the structure can lay the foundation for low energy nonvolatile memory prototype.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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