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arXiv 1203.4083cond-mat.mtrl-sci
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Ho取代BiFeO3的结构、磁性和电学性质研究

Study of Structural, Magnetic and Electrical properties on Ho - substituted BiFeO3

T. Durga Rao, T. Karthik, Adiraj Srinivas, Saket Asthana

摘要:

采用传统的固相法合成了Bi 1-xHoxFeO 3(x=0,0.05,0.1)多晶化合物。Rietveld精修表明,所有化合物均稳定在R3 c(IUCr No.161)空间群的菱面体结构中。在HO取代的化合物中观察到竞争的铁磁和反铁磁相互作用。随着Ho浓度的增加,Fe-O-Fe键角和Fe-O键距的变化使Neel转变温度升高。对于每个浓度,阻抗虚部(Z”)中出现峰,并且该峰随温度向高频侧移动,表明存在电弛豫。用相关势垒跳跃模型(CBH)解释了BFO和Ho取代BFO材料的交流电导率随频率和温度的变化关系及输运机制。利用交流电导率数据计算了费米能级附近的态密度。

英文摘要:

The polycrystalline Bi1-xHoxFeO3 (x=0, 0.05, 0.1) compounds were synthesized by conventional solid-state route. Rietveld refinement reveals that all the compounds were stabilized in rhombohedral structure with R3c (IUCr No. 161) space group. A competing ferro and anti-ferro magnetic interaction was observed in Ho-substituted compounds. A change in the Fe-O-Fe bond-angle and Fe-O bond distance increase the Neel Transition temperature with increasing Ho concentration. The appearance of peak in imaginary part of impedance (Z") for each concentration and shifting of this peak with temperature towards higher frequency side indicated that the presence of electric relaxations. Correlated Barrier Hopping model (CBH) was employed to explain the frequency and temperature dependence of ac conductivity and the mechanism of transport in the material BFO and Ho substituted BFO. Density of states near Fermi level was calculated by using the ac conductivity data.

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