The effect of Li substitution for Mg and of Li-C co-substitution on the superconducting properties and crystal structure of MgB2 single crystals has been investigated. It has been found that hole doping with Li decreases the superconducting transition temperature Tc, but at a slower rate than electron doping with C or Al. Tc of MgB2 crystals with simultaneously substituted Li for Mg and C for B decreases more than in the case where C is substituted alone. This means that holes introduced by Li cannot counterbalance the effect of decrease of Tc caused by introduction of electrons coming from C. The possible reason of it can be that holes coming from Li occupy the pi band while electrons coming from C fill the sigma band. The temperature dependences of the upper critical field Hc2 for Al and Li substituted crystals with the same Tc show a similar dHc2/dT slope at Tc and a similar Hc2(T) behavior, despite of much different substitution level. This indicates that the mechanism controlling Hc2 and Tc is similar in both hole and electron doped crystals. Electrical transport measurements show an increase of resistivity both in Li substituted crystals and in Li and C co-substituted crystals. This indicates enhanced scattering due to defects introduced by substitutions including distortion of the lattice. The observed behavior can be explained as a result of two effects, influencing both Tc and Hc2. The first one is doping related to the changes in the carrier concentration, which may lead to the decrease or to the increase of Tc. The second one is related to the introduction of new scattering centers leading to the modification of the interband and/or intraband scattering and therefore, to changes in the superconducting gaps and to the reduction of Tc.
Superconducting Order Parameter and Bosonic Mode in Hydrogen-Substituted NdFeAsO$_{0.6}$H$_{0.36}$ Revealed by Multiple Andreev Reflection Spectroscopy
Growth of superconducting epitaxial films of sulfur substituted FeSe via pulsed laser deposition
本文报道了用脉冲激光沉积法成功地生长了含$x \leq 0.43$的FeSe $_{1-x}$ S $_x$外延薄膜。随着S含量的增加，超导转变温度$T_{\mathrm s}$系统地降低，并且超导转变温度$T_{\mathrm c}$显示出逐渐降低，即使当$x$超过超导终点（NEP）时，类似于体样品。对于具有大$x$的膜，在$ρ$-$T$曲线中观察到新的扭结异常，这可能是由于磁性转变。FeSe $_{1-x}$ S $_x$薄膜的相图与FeSe $_{1-y}$ Te $_y$薄膜的相图相反，其显示在NEP处$T_{\mathrm c}$快速增加。结果表明，在FeSe体系中，超导电性与超有序度之间的关系并不普遍，这表明在这些材料中，超导电性与超有序度之间的关系并不是主要的.
Nonmonotonic Evolution of the Superconducting Transition Temperature and Robust Multigap Extended s-wave + s-wave Pairing in Zn-Substituted FeSe Single Crystals
Department of Applied Physics, Anhui Medical University（安徽医科大学应用物理系）；Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China（中国科学技术大学微尺度物质科学国家研究中心）；Materials Sciences Division, Lawrence Berkeley National Lab（劳伦斯伯克利国家实验室材料科学部）；Department of Materials Science and Engineering, University of California, Berkeley（加州大学伯克利分校材料科学与工程系）；Engineering Technology Research Center of Magnetic Materials, School of Physics & Materials Science, Anhui University（安徽大学物理与材料科学学院磁性材料工程技术研究中心）；Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, Chinese Academy of Sciences（中国科学院合肥物质科学研究院强磁场科学中心安徽省低能量子材料与器件重点实验室）；Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology (Guangzhou)（香港科技大学（广州）材料表征与制备平台）；Advanced Materials Thrust, Function Hub, The Hong Kong University of Science and Technology (Guangzhou)（香港科技大学（广州）功能枢纽先进材料领域）；Institute of Applied Physics and Materials Engineering, University of Macau（澳门大学应用物理学与材料工程研究所）；Department of Chemistry, University of Science and Technology of China（中国科学技术大学化学系）
Incommensurate Antiferromagnetic Order in the Fe-substituted Bi-2201 Cuprate in the Heavily Overdoped Regime
Sophia University（上智大学）；RIKEN Nishina Center（理化学研究所仁科中心）；Institute for Materials Research, Tohoku University（东北大学材料科学研究所）；ISIS Pulsed Neutron and Muon Source, STFC Rutherford Appleton Laboratory（STFC卢瑟福阿普顿实验室ISIS脉冲中子与μ子源）；Neutron Scattering Division, Oak Ridge National Laboratory（橡树岭国家实验室中子散射部）；Institute for Solid State Physics, The University of Tokyo（东京大学固体物理研究所）；Department of Natural Sciences, Tokyo Denki University（东京电机大学自然科学系）
Effect of pressure on the superconducting properties of Au substituted PdTe$_2$ with the CdI$_2$-type structure
Niigata University（新潟大学）；National Institute for Materials Science (NIMS)（国立材料研究所）；University of the Ryukyus（冲绳大学）；Tokyo Metropolitan University（东京都立大学）；University of Amsterdam（阿姆斯特丹大学）
Evolution of band structure from optimally doped to heavily overdoped Co-substituted NaFeAs
用角分辨光电子能谱研究了NaFe $_{1-x}$ Co $_x$ As从最佳掺杂超导化合物（$x=0.028$）到重过掺杂非超导化合物（$x=0.109$）的电子结构。与“122”型铁磷属元素化合物的情况类似，我们的数据表明，在NaFe $_{1-x}$ Co $_x$ As中的Co掺杂提供了额外的载流子，并相应地移动了费米能级。在$x=0.109$化合物中，围绕带中心$Γ$的空穴状带移动到更深的结合能，而出现电子口袋。在整个掺杂范围内，我们研究的整体能带重整化基本上保持不变，这表明局部磁/电子相关性不受载流子掺杂的影响。我们推测，流动载流子的巡游特性和局域相互作用之间的平衡可能对超导性起着重要的作用。
Spin dynamics near a putative antiferromagnetic quantum critical point in Cu substituted BaFe$_2$As$_2$ and its relation to high-temperature superconductivity
我们提出的非超导Ba（Fe ${_{0.957}}$ Cu ${_{0.043}}$）${_2}$作为${_2}$，一个组合物的AFM有序和顺磁相之间的量子临界点的弹性和非弹性中子散射测量的结果。通过将这些结果与低Cu组份以及母体化合物BaFe $_2$ As $_2$和超导Ba（Fe $_{1-x}$ Ni $_x$）$_2$作为$_2$化合物，我们证明了Ba的反铁磁有序态中的顺磁自旋涨落是明显的（Fe $_{0.957}$ Cu $_{0.043}$）$_2$作为$_2$，它不同于超导化合物中类似AFM的自旋涨落。我们的观察表明，铜替代扰乱准粒子之间的相互作用和自旋涨落。我们还表明，自旋-自旋相关长度，${ξ(T)}$，迅速增加，随着温度的降低，并找到${ω/T}$标度行为，量子临界的标志，在反铁磁量子临界点。
Structural and superconducting properties of MgB$_{2-x}$Be$_x$
我们制备了MgB $_{2-x}$ Be $_{x}$（$x=0$、0.2、0.3、0.4和0.6）样品，其中B被Be取代。MgB $_{2}$结构一直保持到$x=0.6$。发现面内和面间晶格常数分别减小和增加。超导转变温度$T_{c}$随$x$的增加而降低。我们发现，$T_{c}$降低与面内收缩相关，但对载流子掺杂不敏感，这与其他取代研究如Mg $_{1-x}$ Al $_{x}$ B $_{2}$和MgB $_{2-x}$ C $_{x}$一致。这项工作的含义进行了讨论的$σ$带的二维性质。
Disorder, critical currents, and vortex pinning energies in isovalently substituted BaFe$_{2}$(As$_{1-x}$P$_{x}$)$_{2}$
我们提出了一个全面的概述的涡旋钉扎在单晶体的同质取代铁基超导体BaFe $_{2}$（As $_{1-x}$ P $_{x}$）$_{2}$，一种材料，有资格作为一个典型的清洁超导体，只包含稀疏的强点状钉[在意义上的C. J.范德贝克{ \em等人}，B { \bf 66}，024523（2002）]。名义上相似的组合物的临界电流值变化很大，表明磁通钉扎是外在的起源。涡旋配置，使用Bitter装饰方法成像，显示比以前观察到的电荷掺杂的Ba（Fe $_{1-x}$ Co $_{x}$）$_{2}$ As $_{2}$单晶的密度波动小。分析表明，钉扎力和能量分布依赖于P含量$x$。然而，它们总是比Ba（Fe $_{1-x}$ Co $_{x}$）$_{2}$ As $_{2}$窄得多，这一结果归因于BaFe $_{2}$（As $_{1-x}$ P $_{x}$）$_{2}$中接近$T_{c}$时超流密度的温度依赖性较弱。临界电流密度测量和钉扎力分布独立地产生有效钉扎中心之间的平均距离$\bar{\mathcal L} \sim 90$ nm，随着P含量的增加而增加。这种演变可以被理解为是伦敦渗透深度的P依赖性的结果。进一步的显着特点是一个广泛的涡流自由的“迈斯纳带”，观察过掺杂晶体的边缘，和特征链状的旋涡安排，观察在所有级别的P-取代。
