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arXiv 1202.5381cond-mat.mes-hallcond-mat.mtrl-sci
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低能离子轰击在Si(100)上形成异常斑图形成

Unusual pattern formation on Si(100) due to low energy ion bombardment

Tanmoy Basu, Jyoti Ranjan Mohanty, T. Som

摘要:

本文研究了低能离子轰击下硅表面形貌在63 \degree-83 \degree范围内的演化。将Si(100)衬底暴露于500 eV氩离子。不同的表面形态随着入射角的增加而演变。观察到高达67 \degree的模式波纹,其在80 \degree处经历向模式波纹的过渡。然而,这种过渡并不是一个尖锐的过渡,而是在中间角度经历了一系列不寻常的斑图形成。当入射角超过80 \degree时,观察到硅表面完全变光滑.所观察到的图案归因于表面限制的粘性流和溅射离子轰击下的侵蚀。

英文摘要:

In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different surface morphology evolves with increasing angle of incidence. Parallel-mode ripples are observed up to 67\degree which undergo a transition to perpendicular-mode ripples at 80\degree. However, this transition is not a sharp one but undergoes a series of unusual pattern formation at intermediate angles. Complete smoothening of silicon surface is observed at incident angles beyond 80\degree. The observed patterns are attributed to surface confined viscous flow and sputter erosion under ion bombardment.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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