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北美退伍军人节(Veterans Day),12 日无更新
arXiv 1202.3837cond-mat.supr-con
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一步法合成高临界电流密度KxFe2-ySe2单晶

One-step synthesis of KxFe2-ySe2 single crystals for high critical current density

Toshinori Ozaki, Hiroyuki Takeya, Hiroyuki Okazaki, Keita Deguchi, Satoshi Demura, Yasuna Kawasaki, Hiroshi Hara, Tohru Watanabe, Takahide Yamaguchi, Yoshihiko Takano

摘要:

我们已经建立了一个简单的过程,允许一步合成的KxFe 2-ySe 2单晶,表现出高的临界电流密度Jc。后退火和淬火技术提高了晶体的均匀性,从而实现了对外部磁场的完全屏蔽。淬火晶体在Tconset = 32.9K和Tczero = 32.1K处表现出超导转变。H//ab和H//c的上临界场μ_{0} Hc 2(0)分别估计为~206和~50 T。在5 K时,H//ab和H//c的临界电流密度Jc高达1.0 \times 10^{5}和3.4 \times 10^{4} A/cm 2。此外,Jc表现出高场性能和显着弱的温度依赖性高达5 T,这表明强钉扎。这些结果表明,KxFe_(2-y)Se_(2-y)是一种具有实际应用前景的候选材料。

英文摘要:

We have established a simple process that allows for the one-step synthesis of KxFe2-ySe2 single crystals, which exhibit high critical current density Jc. The post annealing and quenching technique has improved the homogeneity of as-grown crystals, resulting in full shielding of the external magnetic field. The quenched crystals show a superconducting transition at Tconset = 32.9 K and Tczero = 32.1 K. The upper critical fields μ_{0}Hc2(0) for H//ab and H//c are estimated to be ~206 and ~50 T, respectively. The critical current densities Jc for H//ab and H//c reach as high as 1.0\times10^{5} and 3.4\times10^{4} A/cm2 at 5 K. Furthermore, Jc exhibits a high field performance and a significantly weak temperature dependence up to 5 T, suggesting strong pinning. These results demonstrate that KxFe2-ySe2 would be a promising candidate material for practical applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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