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arXiv 1201.4433cond-mat.mes-hallcond-mat.mtrl-sci
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拓扑绝缘体表面态的二维输运和屏蔽

2D transport and screening in topological insulator surface states

S. Adam, E. H. Hwang, S. Das Sarma

摘要:

研究了拓扑绝缘体Bi $_2$ Se $_3$在拓扑保护交叉点附近的表面态的无序效应。接近电荷中性,由环境中的随机带电无序引起的载流子密度的局部波动导致主导这些材料的电子性质的电子和空穴水坑。通过使用随机相位近似计算表面态的极化率,并使用自洽近似确定水坑的特性,我们发现,带不对称性在确定实验测量的量,包括电导率和水坑的自相关长度起着至关重要的作用。

英文摘要:

We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged disorder in the environment result in electron and hole puddles that dominate the electronic properties of these materials. By calculating the polarizability of the surface state using the random phase approximation, and determining the characteristics of puddles using the self-consistent approximation, we find that band asymmetry plays a crucial role in determining experimentally measured quantities including the conductivity and the puddle autocorrelation length.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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