We apply perturbative effective mass theory as a broadly applicable theoretical model for quantum confinement (QC) in all Si and Ge nanostructures including quantum wells (QWs), wires (Q-wires) and dots (QDs). Within the limits of strong, medium, and weak QC, valence and conduction band edge energy levels (VBM and CBM) were calculated as a function of QD diameters, QW thicknesses and Q-wire diameters. Crystalline and amorphous quantum systems were considered separately. Calculated band edge levels with strong, medium and weak QC models were compared with experimental VBM and CBM reported from X-ray photoemission spectroscopy (XPS), X-ray absorption spectroscopy (XAS) or photoluminescence (PL). Experimentally, the dimensions of the nanostructures were determined directly, by transmission electron microscopy (TEM), or indirectly, by x-ray diffraction (XRD) or by XPS. We found that crystalline materials are best described by a medium confinement model, while amorphous materials exhibit strong confinement regardless of the dimensionality of the system. Our results indicate that spatial delocalization of the hole in amorphous versus crystalline nanostructures is the important parameter determining the magnitude of the band gap expansion, or the strength of the quantum confinement. In addition, the effective masses of the electron and hole are discussed as a function of crystallinity and spatial confinement.
The recent discovery of Dirac semimetals represents a new achievement in our fundamental understanding of topological states of matter. Due to their topological surface states, high mobility, and exotic properties associated with bulk Dirac points, these new materials have attracted significant attention and are believed to hold great promise for fabricating novel topological devices. For nanoscale device applications, effects from finite size usually play an important role. In this report, we theoretically investigate the electronic properties of Dirac semimetal nanostructures. Quantum confin…
We study the modification of micromagnetic configurations in nanostructures, due to the Dzyaloshinskii-Moriya interaction (DMI) that appear at the interface of an ultrathin film. We show that this interaction leads to new micromagnetic boundary conditions that bend the magnetization at the edges. We explore several cases of ultrathin film nanostructures that allow analytical calculations (1D systems, domain walls, cycloids and skyrmions), compare with fully numerical calculations, and show that a good physical understanding of this new type of micromagnetics can be reached. We particularly foc…
It is shown theoretically that the confinement of an electron at a repulsive potential can exist in nanostructures subjected to a strong high-frequency electromagnetic field. As a result of the confinement, the metastable bound electron state of the repulsive potential appears. This effect can lead, particularly, to electron pairing in nanostructures containing conduction electrons with different effective masses.
Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD sample only when $E_{G}\sim (D^2+D)^{-1}$. We identified that above $D\approx$ 6.2 nm: $E_{G}\sim D^{-1}$ due to a changing effective mass (EM), while below $D\approx$ 4.6 nm: $E_{G}\sim D^{-2}$ due to electron/ hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface sca…
Theoretical Raman line shape functions have been studied to take care of quantum confinement effect and Fano effect individually and jointly. The characteristics of various Raman line shapes have been studied in terms of the broadening and asymmetry of Raman line shapes. It is shown that the asymmetry in the Raman line-shape function caused by these two effects individually does not add linearly to give asymmetry of line-shape generated by considering the combined effect. This indicates existence of interplay between the two effects. The origin of interplay lies in the fact that Fano effect it…
The observation of quantum light emission from atomically thin transition metal dichalcogenides has opened a new field of applications for these material systems. The corresponding excited charge-carrier localization has been linked to defects and strain, while open questions remain regarding the microscopic origin. We demonstrate that the bending rigidity of these materials leads to wrinkling of the two-dimensional layer. The resulting strain field facilitates strong carrier localization due to its pronounced influence on the band gap. Additionally, we consider charge carrier confinement due …
We look at the relationship between the preparation method of Si and Ge nanostructures (NSs) and the structural, electronic, and optical properties in terms of quantum confinement (QC). QC in NSs causes a blue shift of the gap energy with decreasing NS dimension. Directly measuring the effect of QC is complicated by additional parameters, such as stress, interface and defect states. In addition, differences in NS preparation lead to differences in the relevant parameter set. A relatively simple model of QC, using a `particle-in-a-box'-type perturbation to the effective mass theory, was applied…
We consider the orbital magnetic properties of non-interacting charge carriers in graphene-based nanostructures in the low-energy regime. The magnetic response of such systems results both, frombulk contributions and from confinement effects that can be particularly strong in ballistic quantum dots. First we provide a comprehensive study of the magnetic susceptibility $χ$ of bulk graphene in a magnetic field for the different regimes arising from the relative magnitudes of the energy scales involved, i.e. temperature, Landau level spacing and chemical potential. We show that for finite tempera…
We have characterized the growth of ZnO using sequential infiltration synthesis (SiS) on PS-b-PMMA block copolymers (BCP) of spherical and cylindrical sub-20nm morphologies and studied how the photoluminescence of these nanostructures varies per its seed layer. Investigation of these structures was done using atomic force microscopy (AFM), spectrofluorometry, Raman spectroscopy, and scanning electron microscopy (SEM). We report blue-shifted photoemission at 335 nm (3.70 eV), suggesting quantum confinement effects. This UV-photoluminescence can be translated into emitter sizes of roughly 1.5nm …
Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) have the potential to add a unique additional control of quantum degrees of freedom owing to valley-spin locking of confined carriers near the band edges. However, due to prevailing inhomogeneities in the conducting channels, it has been difficult to realize quantum confinement in 2D TMDCs with well-controlled tunnel-coupling strength. Her…
We describe the transport properties of mesoscopic devices based on the two dimensional electron gas (2DEG) present at the LaAlO$_3$/SrTiO$_3$ interface. Bridges with lateral dimensions down to 500~nm were realized using electron beam lithography. Their detailed characterization shows that processing and confinement do not alter the transport parameters of the 2DEG. The devices exhibit superconducting behavior tunable by electric field effect. In the normal state, we measured universal conductance fluctuations, signature of phase-coherent transport in small structures. The achievement of relia…
Electronic states and the Aharonov-Bohm effect in ZnO quantum dot-ring nanostructures containing few interacting electrons reveal several unique features. We have shown here that in contrast to the dot-rings made of conventional semiconductors, such as InAs or GaAs, the dot-rings in ZnO heterojunctions demonstrate several unique characteristics due to the unusual properties of quantum dots and rings in ZnO. In particular the energy spectra of the ZnO dot-ring and the Aharnov-Bohm oscillations are strongly dependant on the electron number in the dot or in the ring. Therefore even small changes …
Optical properties of metallic nanoparticles are most often considered in terms of plasmons, the coupled states of light and quasi-free electrons. Here we predict that confinement of electrons inside the nanostructure leads to another, very different, type of resonance, which determines the optical properties in the frequency range significantly below the plasmonic resonance. We demonstrate that closely placed confinement-induces resonances typically join into a single composite "super-resonance" which produces giant nonlinearity at low frequencies. Our simulations show how such nonlinearities…
Vanadium tetracyanoethylene (V[TCNE]$_\text{x}$) is an organic-based ferrimagnet that exhibits robust magnetic ordering (T$_\text{C}$ of over 600 K), high quality-factor (high-Q) microwave resonance (Q up to 3,500), and compatibility with a wide variety of substrates and encapsulation technologies. Here, we substantially expand the potential scope and impact of this emerging material by demonstrating the ability to produce engineered nanostructures with tailored magnetic anisotropy that serve as a platform for the exploration of cavity magnonics, revealing strongly coupled quantum confined sta…
An important challenge in silicon quantum electronics in the few electron regime is the potentially small energy gap between the ground and excited orbital states in 3D quantum confined nanostructures due to the multiple valley degeneracies of the conduction band present in silicon. Understanding the "valley-orbit" (VO) gap is essential for silicon qubits, as a large VO gap prevents leakage of the qubit states into a higher dimensional Hilbert space. The VO gap varies considerably depending on quantum confinement, and can be engineered by external electric fields. In this work we investigate V…
We use quantum electrodynamics and the confinement-induced nonlocal dielectric response model based on the Keldysh-Rytova electron interaction potential to study the epsilon-near-zero modes of metallic films in the transdimensional regime. New peculiar effects are revealed such as the plasmon mode degeneracy lifting and the dipole emitter coupling to the split epsilon-near-zero modes, leading to thickness-controlled spontaneous decay with up to three-orders-of-magnitude increased rates.
In this review we focus on electronic transport through semiconductor nanostructures which are driven by ac fields. Along the review we describe the available experimental information on different nanostructures, like resonant tunneling diodes, superlattices or quantum dots, together with the theoretical tools needed to describe the observed features. These theoretical tools such as, for instance, the Floquet formalism, the non-equilibrium Green's function technique or the density matrix technique, are suitable for tackling with photon-assisted transport problems where the interplay of differe…
Modern nanotechnology allows producing, depending on application, various quantum nanostructures with the desired properties. These properties are strongly influenced by the confinement potential which can be modified, e.g., by electrical gating. In this paper we analyze a nanostructure composed of a quantum dot surrounded by a quantum ring. We show that depending on the details of the confining potential the electron wave functions can be located in different parts of the structure. Since the properties of such a nanostructure strongly depend on the distribution of the wave functions, varying…
Magnetic skyrmions are chiral spin structures that have recently been observed at room temperature (RT) in multilayer thin films. Their topological stability should enable high scalability in confined geometries - a sought-after attribute for device applications. While umpteen theoretical predictions have been made regarding the phenomenology of sub-100 nm skyrmions confined in dots, in practice their formation in the absence of an external magnetic field and evolution with confinement remain to be established. Here we demonstrate the confinement-induced stabilization of sub-100 nm RT skyrmion…
Quantum confinement of graphene Dirac-like electrons in artificially crafted nanometer structures is a long sought goal that would provide a strategy to selectively tune the electronic properties of graphene, including bandgap opening or quantization of energy levels However, creating confining structures with nanometer precision in shape, size and location, remains as an experimental challenge, both for top-down and bottom-up approaches. Moreover, Klein tunneling, offering an escape route to graphene electrons, limits the efficiency of electrostatic confinement. Here, a scanning tunneling mic…
Transport properties of a gated nanostructure depend crucially on the coupling of its states to the states of electrodes. In the case of a single quantum dot the coupling, for a given quantum state, is constant or can be slightly modified by additional gating. In this paper we consider a concentric dot-ring nanostructure (DRN) and show that its transport properties can be drastically modified due to the unique geometry. We calculate the dc current through a DRN in the Coulomb blockade regime and show that it can efficiently work as a single electron transistor or a current rectifier. In both c…
We theoretically analyse the possibility to electrostatically confine electrons in circular quantum dot arrays, impressed on contacted graphene nanoribbons by top gates. Utilising exact numerical techniques, we compute the scattering efficiency of a single dot and demonstrate that for small-sized scatterers the cross-sections are dominated by quantum effects, where resonant scattering leads to a series of quasi-bound dot states. Calculating the conductance and the local density of states for quantum dot superlattices we show that the resonant carrier transport through such graphene-based nanos…
Size-dependent quantization of energy spectrum of conducting electrons in solids leads to oscillating dependence of electronic properties on corresponding dimension(s). In conventional metals with typical energy Fermi EF~1 eV and the charge carrier's effective masses m* of the order of free electron mass m0, the quantum size phenomena provide noticeable impact only at nanometer scales. Here we experimentally demonstrate that in single-crystalline semimetal bismuth nanostructures the electronic conductivity non-monotonously decreases with reduction of the effective diameter. In samples grown al…
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B$^+$ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B$^+$ dose greater than $10^{14}$ ions cm$^{-2}$. The asymmetry and red shift in the Raman line-shape i…
Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and tr…
Generally, there are two distinct effects in modifying the properties of low-dimensional nanostructures: surface effect (SS) due to increased surface-volume ratio and quantum size effect (QSE) due to quantum confinement in reduced dimension. The SS has been widely shown to affect the elastic constants and mechanical properties of nanostructures. Here, using Pb nanofilm and graphene nanoribbon as model systems, we demonstrate the QSE on the elastic constants of nanostructures by first-principles calculations. We show that generally QSE is dominant in affecting the elastic constants of metallic …
We describe magnetotransport experiments performed on Hall crosses made from quantum wires at LaAlO3/SrTiO3 interfaces. Shubnikov-de Haas oscillations measured in a 14-nm wide structure exhibit modulations that are consistent with spin-orbit coupling or valley degeneracies. Hall measurements performed on the 6 nm-wide Hall cross reveal dissipative coupling to magnetic phases. Hall plateaus are observed that deviate significantly from two-dimensional quantum Hall counterparts. Non-monotonic dips in the Hall resistance are attributed to one-dimensional confinement and spin-orbit coupling.
Exchange interaction has been studied for electrons in coupled quantum dots (QD's) by a configuration interaction method using confinement potentials with different profiles. The confinement potential has been parametrized by a two-centre power-exponential function, which allows us to investigate various types of QD's described by either soft or hard potentials of different range. For the soft (Gaussian) confinement potential the exchange energy decreases with increasing interdot distance due to the decreasing interdot tunnelling. For the hard (rectangular-like) confinement potential we have f…
Optical spectroscopy and quantum control of semiconductor quantum dots has become a vivid field of research. The recent progress in both theory and experiment is reviewed, with emphasis on theoretical and computational concepts.
We study the electronic properties of GaAs nanowires composed of both the zincblende and wurtzite modifications using a ten-band k.p model. In the wurtzite phase, two energetically close conduction bands are of importance for the confinement and the energy levels of the electron ground state. These bands form two intersecting potential landscapes for electrons in zincblende/wurtzite nanostructures. The energy difference between the two bands depends sensitively on strain, such that even small strains can reverse the energy ordering of the two bands. This reversal may already be induced by the …
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via polarization-resolved microphotoluminescence excitation ($μ$PLE) measurement performed on single nanostructures combined with theoretical calculation of neutral and charged exciton optical properties. We…
The electron and hole g factors are the key quantities for the spin manipulations in semiconductor quantum nanostructures. However, for the individual nanostructures, the separate determination including the signs of those g factors is difficult by using some methods adopted conventionally in bulks and quantum wells. We report a convenient optical method for the sign identification of out-of-plane g factors in the individual quantum nanostructures, which utilizes the optically-induced nuclear spin switch. The method is demonstrated in typical single self-assembled In$_{0.75}$Al$_{0.25}$As/Al$_…
We develop a quantum noise approach to study quantum transport through nanostructures. The nanostructures, such as quantum dots, are regarded as artificial atoms, subject to quasi-equilibrium fermionic reservoirs of electrons in biased leads. Noise operators characterizing the quantum fluctuation in the reservoirs are related to the damping and fluctuation of the artificial atoms through the quantum Langevin equation. The average current and current noise are derived in terms of the reservoir noise correlations. In the white-noise limit, we show that the current and current noise can be exactl…
I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties). II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential). III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and De…
A theory is presented to show how near-field optical microscopy can be used to probe quantum nanostructures. Calculations are done for a quantum dot. Results for different tip/dot configurations and sizes show that near-field excitation can enhance light-hole transitions, excite selection-rule breaking transitions with rates comparable to allowed transitions, and map electron-hole pair wave functions. Conversely, dot response can be used to characterize tip near-fields.
Geometric symmetries cause orbital degeneracies in a molecule's spectrum. In a single-molecule junction, these degeneracies are lifted by various symmetry-breaking effects. We study quantum transport through such nanostructures with an almost degenerate spectrum. We show that the master equation for the reduced density matrix must be derived within the singular-coupling limit as opposed to the conventional weak-coupling limit. This results in signatures of the density matrix's off-diagonal elements in the transport characteristics.
Two-dimensional (2D) materials for their versatile band structures and strictly 2D nature have attracted considerable attention over the past decade. Graphene is a robust material for spintronics owing to its weak spin-orbit and hyperfine interactions, while monolayer transition metal dichalcogenides (TMDs) possess a Zeeman effect-like band splitting in which the spin and valley degrees of freedom are nondegenerate. The surface states of topological insulators (TIs) exhibit a spin-momentum locking that opens up the possibility of controlling the spin degree of freedom in the absence of an exte…
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and…
Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in axial and radial directions is systematically investigated. Excited state relaxation leads to significant Stokes shifts for short nanorods with lengths less than 2 nm, but has little effect on the luminescence intensity. The formation of self-trapped excitons is likewise observed for short nanostructures only; longer wires exhibit fully delocalized excitons w…
Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the physical edges of samples. Here we present a technique which enables the realization of quantum point contacts and quantum dots in two-dimensional electron gases of InAs purely by electrostatic gating. Multiple layers of top gates separated by dielectric layers are employed. Full quantum point contact pinch-off and measurements of Coulomb-blockade diamonds of quant…
The effect of homogeneous electric field on the energy spectrum, wave functions of electron and oscillator strengths of intra-band quantum transitions in a double cylindrical quantum ring (GaAs/Al$_{x}$Ga$_{1-x}$As) is studied within the approximations of effective mass and rectangular potentials. The calculations are performed using the method of expansion of quasiparticle wave function over a complete set of cylindrical wave functions obtained as exact solutions of Schrödinger equation for an electron in a nanostructure without electric field. It is shown that the electric field essentially …
Recent progress in experimental studies of low-dimensional systems with strong spin-orbit coupling poses a question on the effect of this coupling on the energy spectrum of electrons in semiconductor nanostructures. It is shown in the paper that this effect is profound in the strong coupling limit. In circular quantum dots a soft mode develops, in strongly elongated dots electron spin becomes protected from the effects of the environment, and the lower branch of the energy spectrum of quantum wires becomes nearly flat in a wide region of the momentum space.
We report electrical conductance and thermopower measurements on InAs nanowires synthesized by chemical vapor deposition. Gate modulation of the thermopower of individual InAs nanowires with diameter around 20nm is obtained over T=40 to 300K. At low temperatures (T< ~100K), oscillations in the thermopower and power factor concomitant with the stepwise conductance increases are observed as the gate voltage shifts the chemical potential of electrons in InAs nanowire through quasi-one-dimensional (1D) sub-bands. This work experimentally shows the possibility to modulate semiconductor nanowire's t…
Colloidal semiconductor nanocrystals (SCNCs) or, more broadly, colloidal quantum nanostructures constitute outstanding model systems for investigating size and dimensionality effects. Their nanoscale dimensions lead to quantum confinement effects that enable tuning of their optical and electronic properties. Thus, emission color control with narrow photoluminescence spectra, wide absorbance spectra, and outstanding photostability, combined with their chemical processability through control of their surface chemistry leads to the emergence of SCNCs as outstanding materials for present and next-…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder severely limit device functionality. Here we present a technique that builds quantum confined structures in suspended bilayer graphene with tunnel barriers defined by external electric fields that break layer inversion symmetry, thereby eliminating both edge and substrate disorder. We report clean quantum dot formation in two regimes: at zero magnetic field…
I. Introduction (Preface, Basic properties of semiconductor nanostructures). II. Theory of Coulomb-blockade oscillations (Periodicity of the oscillations, Amplitude and lineshape). III. Experiments on Coulomb-blockade oscillations (Quantum dots, Disordered quantum wires, Relation to earlier work on disordered quantum wires). IV. Quantum Hall effect regime (The Aharonov-Bohm effect in a quantum dot, Coulomb blockade of the Aharonov-Bohm effect, Experiments on quantum dots, Experiments on disordered quantum wires).
A proposal of a spin separator based on the spin Zeeman effect in Y-shaped nanostructure with a quantum point contact is presented. Our calculations show that the appropriate tuning of the quantum point contact potential and the external magnetic field leads to the spin separation of the current: electrons with opposite spins flow through the different output branches. We demonstrate that this effect is robust against the scattering on impurities. The proposed device can also operate as a spin detector, in which -- depending on the electron spin -- the current flows through one of the output b…
At room temperature, a macroscopic quantum galvanomagnetic effect of Faraday electromagnetic induction was demonstrated under conditions of the capture of single magnetic flux quanta in the edge channels, confined by chains of negative-U centers, in a silicon nanostructure heavily doped with boron, prepared in Hall geometry on an n-type Si (100) substrate. It is shown that this effect leads to the appearance of an induction current when only a constant magnetic field is applied in the absence of an externally applied voltage or a stabilized current.
Coherent carrier control in quantum nanostructures is studied within the framework of Optimal Control. We develop a general solution scheme for the optimization of an external control (e.g., lasers pulses), which allows to channel the system's wavefunction between two given states in its most efficient way; physically motivated constraints, such as limited laser resources or population suppression of certain states, can be accounted for through a general cost functional. Using a generic three-level scheme for the quantum system, we demonstrate the applicability of our approach and identify the…
