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arXiv 1108.0359cond-mat.mes-hall
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量子线中低密度电子电导量子化的半步

A half-step in quantized conductance for low-density electrons in a quantum wire

Godfrey Gumbs, Antonios Balassis, Danhong Huang, Sheehan Ahmed, Ryan Brennan

摘要:

研究了垂直磁场对电子自旋轨道相互作用(SOI)量子线的影响。基于计算的能量色散,非线性弹道电导($G$)和电子扩散热电功率($S_d$)作为电子密度,温度和外加偏压的函数计算。此处在低密度区域中再现了由Quay等人[参见Nature Physics { \bf 6},336(2010)]实验观察到的$G$中的低温半阶特征以及$S_d$中的新峰。这些现象与能带结构中塞曼分裂和SOI诱导鞍点的出现有关,其中沟道化学势位于下子带鞍点和上子带底部之间的反交叉间隙内。此外,侧峰在$G$远离零偏压的非线性输运,以及二次偏压电压依赖性的$G$接近零电压,预测和讨论。

英文摘要:

We investigated the effect due to perpendicular magnetic field on quantum wires where spin-orbit interaction (SOI) of electrons is not neglected. Based on the calculated energy dispersion, the nonlinear ballistic conductance ($G$) and electron-diffusion thermoelectric power ($S_d$) are calculated as functions of electron density, temperature and applied bias voltage. A low-temperature half-step feature in $G$, which was observed experimentally by Quay et al. [see Nature Physics {\bf 6}, 336 (2010)], as well as a new peak in $S_d$ are reproduced here in the low density regime. These phenomena are related to the occurrence of the Zeeman splitting and SOI induced saddle point in the band structure, where the channel chemical potential lies within an anticrossing gap between the saddle point of the lower subband and the bottom of the upper subband. Additionally, side peaks in $G$ far away from the zero bias for the nonlinear transport, as well as a quadratic bias-voltage dependence of $G$ near zero voltage, are predicted and discussed.

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