In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at accumulation and show relaxation effects in the whole range of applied stress voltages. Applied voltage polarities as well as thickness dependence of the relaxation effects have been investigated. Charge trapping is negligible at low stress fields while at higher fields (>4MV/cm) it becomes significant. In addition, we give experimental evidence that in tandem with the dielectric relaxation effect another mechanism- the so-called Maxwell-Wagner instability- is present and affects the transient current during the application of a CVS pulse. This instability is also found to be field dependent thus resulting in a trapped charge which is negative at low stress fields but changes to positive at higher fields.
Investigation of GeSn aspect ratio trapping growth up to 8% Sn
Arkansas Materials Institute, University of Arkansas（阿肯色材料研究所，阿肯色大学）；Department of Electrical Engineering and Computer Science, University of Arkansas（电气与计算机工程系，阿肯色大学）；Lincoln Laboratory, Massachusetts Institute of Technology（林肯实验室，麻省理工学院）；Thayer School of Engineering, Dartmouth College（塞耶工程学院，达特茅斯学院）；Arktonics, LLC（Arktonics有限责任公司）；Material Science and Engineering Program, University of Arkansas（材料科学与工程项目，阿肯色大学）；Department of Physics, University of Arkansas（物理系，阿肯色大学）
Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation t…
Plasmonic nanopores are extensively investigated as single molecules detectors. The main limitations in plasmonic nanopore technology are the too fast translocation velocity of the molecule through the pore and the consequent very short analysis times, as well as the possible instabilities due to local heating. The most interesting approach to control the translocation of molecules and enable longer acquisition times is represented by the ability to efficiently trap and tune the motion of nanoparticles that can be used to tag molecules. Here, we theoretically investigate the performance of a m…
