高达8%锡含量的GeSn的纵横比俘获生长研究
Investigation of GeSn aspect ratio trapping growth up to 8% Sn
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中文总结 AI 辅助
本研究实现了锡含量达8%的GeSn ART生长，明确了两种结构，揭示ART岛金字塔形与锡掺入的关联及生长选择性、局域加热的作用，为GeSn光电器件发展提供基础。
中文摘要 AI 辅助
锗锡合金（GeSn）的纵横比俘获（ART）生长是实现与互补金属氧化物半导体（CMOS）兼容的GeSn光电器件商业化相关重要目标的有前景方法。其在图案化衬底上的局域生长可灵活集成到光子集成电路中，或用于焦平面阵列成像器等独立结构。此外，纳米级窗口带来的高纵横比可终止 threading 位错在氧化物侧壁的早期传播，使后续生长无缺陷，有望提升器件性能。目前仍缺乏关于GeSn ART生长动力学、形貌及其从薄膜生长演化的认知，且尚未实现成功的ART生长。本研究报告了锡含量高达8%的GeSn ART生长，观察到两种结构：锡含量6%至8%时为自诱导Ge核/GeSn壳结构，锡含量低于1%时为块状GeSn ART结构。我们通过不同生长轮次和设计对GeSn ART生长动力学开展了全面研究，揭示了ART岛的金字塔形与成功锡掺入之间的关联，以及生长选择性和局域加热的作用。
英文摘要
Aspect ratio trapping (ART) growth of germanium-tin (GeSn) is a promising approach to target important objectives on the quest towards commercialization of complementary metal-oxide-semiconductor (CMOS)-compatible GeSn optoelectronics devices. Its local growth on patterned substrate allows for versatile device integration into photonics integrated circuit or for stand-alone structure like focal plane array imager. Additionally, high aspect ratio from nano-sized window can terminate early threading dislocation propagation on the oxide sidewalls, leaving subsequent growth defect-free and potentially improving the device performance. Knowledge remains missing regarding GeSn ART growth kinetics, morphology and how they evolve from thin film growth, with successful growth itself yet to be demonstrated. In this work, we report GeSn ART growth up to 8% Sn. Two configurations -- self-induced Ge core/GeSn shell for Sn content between 6% and 8%, and bulk GeSn ART for Sn content below 1% -- are observed. We present a comprehensive study on GeSn ART growth kinetics through different growth rounds and designs, showing a link between pyramid shape of ART island and successful Sn incorporation, as well as the role of growth selectivity and local heating.
