MOS器件中高温电子俘获的原子起源
Atomic origin of high temperature electron trapping in MOS devices
摘要：
基于宽带隙半导体的MOSFET适合在高温下工作，在高温下，在较低温度下良性的附加原子级过程可能被激活，从而导致器件退化。最近，在高于150°C的温度下，观察到SiC MOSFET在正偏压下的电子俘获显著增强。在这里，我们报告的第一原理计算表明，增强的电子捕获与热激活捕获的第二个电子的氧空位在SiO2中，通过该空位转变成一个新的结构，其中包括一个Si悬挂键和五倍和四倍的Si原子之间的键。结果表明，氧空位及其结构的重新配置在高温MOS器件的可靠性的关键作用。
英文摘要：
MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150°C. Here we report first-principle calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO2, by which the vacancy transforms into a new structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.
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