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arXiv 1107.1986cond-mat.mes-hallcond-mat.str-el
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From Fractional Chern Insulators to a Fractional Quantum Spin Hall Effect

M. O. Goerbig

英文摘要:

We investigate the algebraic structure of flat energy bands a partial filling of which may give rise to a fractional quantum anomalous Hall effect (or a fractional Chern insulator) and a fractional quantum spin Hall effect. Both effects arise in the case of a sufficiently flat energy band as well as a roughly flat and homogeneous Berry curvature, such that the global Chern number, which is a topological invariant, may be associated with a local non-commutative geometry. This geometry is similar to the more familiar situation of the fractional quantum Hall effect in two-dimensional electron systems in a strong magnetic field.

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