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arXiv 1106.4430cond-mat.supr-con
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Ba0.6 K0.4 Fe2 As2的光学电导率:超导能隙中面内和面外掺杂的影响

Optical conductivity of Ba0.6 K0.4 Fe2 As2 : The effect of in-plane and out-of-plane doping in the superconducting gap

Y. M. Dai, B. Xu, B. Shen, H. H. Wen, X. G. Qiu, R. P. S. M. Lobo

摘要:

我们测量了一个Tc = 39.1K的近最佳掺杂的(Ba,K)Fe_2As_2单晶的面内电导率。当进入超导状态时,低于~20 meV的光学电导率消失,强烈表明完全带隙系统。BCS类拟合需要两个不同的各向同性间隙来描述这种材料的光学响应。的间隙和穿透深度的温度依赖性建议一个强大的带间耦合,但没有杂质散射诱导的对断裂存在。这与在最佳掺杂的Ba(Fe,Co)2As2中观察到的大的残余电导率形成对比,并且强烈支持这些化合物的s(+/-)带隙对称性。

英文摘要:

We measured the in-plane optical conductivity of a nearly optimally doped (Ba,K)Fe2As2 single crystal with Tc = 39.1 K. Upon entering the superconducting state the optical conductivity below ~20 meV vanishes, strongly suggesting a fully gapped system. A BCS-like fit requires two different isotropic gaps to describe the optical response of this material. The temperature dependence of the gaps and the penetration depth suggest a strong interband coupling, but no impurity scattering induced pair breaking is present. This contrasts to the large residual conductivity observed in optimally doped Ba(Fe,Co)2As2 and strongly supports an s(+/-) gap symmetry for these compounds.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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