This work reviews and examines two particular issues related with the new technique of electrical detection of ferromagnetic resonance (FMR). This powerful technique has been broadly applied for studying magnetization and spin dynamics over the past few years. The first issue is the relation and distinction between different mechanisms that give rise to a photovoltage via FMR in composite magnetic structures, and the second is the proper analysis of the FMR line shape, which remains the "Achilles heel" in interpreting experimental results, especially for either studying the spin pumping effect or quantifying the spin Hall angles via the electrically detected FMR.
Electrically detected magnetic resonance (EDMR) is applied to mm size devices with implanted leads and a 50 micron square gap laid down on bulk phosphorus doped silicon. Devices with a range of phosphorus concentrations and surface types were prepared and measured to examine the interplay between donor and charge trap states in producing EDMR signals.
Converse magnetoelectric coupling in artificial multiferroics is generally modelled through three possible mechanisms: charge transfer, strain mediated or ion migration. Here we demonstrate a novel and highly reliable approach, where electrically controlled morphological modifications control the ferromagnetic response of a magnetoelectric heterostructure, specifically FexMn1-x ferromagnetic films on ferroelectric PMN-PT (001) substrates. The ferroelectric PMN-PT substrates present, in correspondence to electrical switching, fully reversible morphological changes at the surface, to which corre…
The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of an LCR tank circuit. Applied to a silicon field-effect transistor at milli-kelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of > 300 kHz compared to the kHz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.
We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2pi from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P-Pb0 distances ranging from 14 nm to 20 nm.
Spin-orbit coupling enables charge currents to give rise to spin currents and vice versa, which has applications in non-volatile magnetic memories, miniature microwave oscillators, thermoelectric converters and Terahertz devices. In the past two decades, a considerable amount of research has focused on electrical spin current generation in different types of nonmagnetic materials. However, electrical spin current generation in ferromagnetic materials has only recently been actively investigated. Due to the additional symmetry breaking by the magnetization, ferromagnetic materials generate spin…
We report room temperature electrical detection of spin injection from a ferromagnetic insulator (YIG) into a ferromagnetic metal (Permalloy, Py). Non-equilibrium spins with both static and precessional spin polarizations are dynamically generated by the ferromagnetic resonance of YIG magnetization, and electrically detected by Py as dc and ac spin currents, respectively. The dc spin current is electrically detected via the inverse spin Hall effect of Py, while the ac spin current is converted to a dc voltage via the spin rectification effect of Py which is resonantly enhanced by dynamic excha…
We present the design and implementation of a scanning probe microscope, which combines electrically detected magnetic resonance (EDMR) and (photo-)conductive atomic force microscopy ((p)cAFM). The integration of a 3-loop 2-gap X-band microwave resonator into an AFM allows the use of conductive AFM tips as a movable contact for EDMR experiments. The optical readout of the AFM cantilever is based on an infrared laser to avoid disturbances of current measurements by absorption of straylight of the detection laser. Using amorphous silicon thin film samples with varying defect densities, the capab…
The investigation of paramagnetic species (such as point defects, dopants, and impurities) in solid-state electronic devices is significant because of their effect on device performance. Conventionally, these species are detected and imaged using the electron spin resonance (ESR) technique. In many instances, ESR is not sensitive enough to deal with miniature devices having small numbers of paramagnetic species and high spatial heterogeneity. This limitation can in principle be overcome by employing a more sensitive method called electrically-detected magnetic resonance, which is based on meas…
SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO$_2$ interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF)…
Continuous wave optically and electrically detected magnetic resonance spectroscopy (cwODMR/cwEDMR) allow the investigation of paramagnetic states involved in spin-dependent transitions, like recombination and transport. Although experimentally similar to conventional electron spin resonance (ESR), there exist limitations when applying models originally developed for ESR to observables (luminescence and electric current) of cwODMR and cwEDMR. Here we present closed-form solutions for the modulation frequency dependence of cwODMR and cwEDMR based on an intermediate pair recombination model and …
Here we describe a new high frequency/high field continuous wave and pulsed electrically detected magnetic resonance (CW EDMR and pEDMR) setup, operating at 263 GHz and resonance fields between 0 and 12 T. Spin dependent transport in illuminated hydrogenated amorphous silicon p-i-n solar cells at 5 K and 90 K was studied by in operando 263 GHz CW and pEDMR alongside with complementary X-band CW EDMR. Benefiting from the superior resolution at 263 GHz, we were able to better resolve EDMR signals originating from spin dependent hopping and recombination processes. 5 K EDMR spectra were found to …
Continuous-wave electrically detected magnetic resonance (cw-EDMR or just EDMR) and its variants are powerful tools to investigate spin-dependent processes in materials and devices. The use of quadrature detection improves the quality and selectivity of EDMR analysis by allowing, for example, the separation of individual resonant spin lines. Here we propose an equivalent circuit model in order to better understand the EDMR quadrature signal in a variety of different situations. The model considers not just the electrical response of the sample but of cables and measuring circuit and its influe…
Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron valleys in these systems for spin/valley filter and valve devices through band engineering. Instead of the magnetic proximity effect that has been extensively used in previous studies, in our strategy, the electron valleys are directly coupled to the spin-polarized states of the two-dimensional ferromagnets. We find that this coupling results in a valley-selective gap opening due to the spin-momentum locking…
We show that in pulsed electrically detected magnetic resonance (pEDMR) signal modulation in combination with a lock-in detection scheme can reduce the low-frequency noise level by one order of magnitude and in addition removes the microwave-induced non-resonant background. This is exemplarily demonstrated for spin-echo measurements in phosphorus-doped Silicon. The modulation of the signal is achieved by cycling the phase of the projection pulse used in pEDMR for the read-out of the spin state.
We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.
We investigate the spin species relevant for the spin-dependent recombination used for the electrical readout of coherent spin manipulation in phosphorus-doped silicon. Via a multi-frequency pump-probe experiment in pulsed electrically detected magnetic resonance, we demonstrate that the dominant spin-dependent recombination transition occurs between phosphorus donors and Si/SiO2 interface states. Combining pulses at different microwave frequencies allows us to selectively address the two spin subsystems participating in the recombination process and to coherently manipulate and detect the rel…
We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum informati…
We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.
Dielectric interfaces critical for metal-oxide-semiconductor (MOS) electronic devices, such as the Si/SiO$_2$ MOS field effect transistor (MOSFET), possess trap states that can be visualized with electrically-detected spin resonance techniques, however the interpretation of such measurements has been hampered by the lack of a general theory of the phenomena. This article presents such a theory for two electrical spin-resonance techniques, electrically detected magnetic resonance (EDMR) and the recently observed near-zero field magnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-…
Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to magneto-ionically and electrically tune exchange bias in Gd/Ni$_{1-x}$Co$_{x}$O thin films (x=0.50, 0.67), where neither of the layers alone is ferromagnetic at room temperature. The Gd capping layer deposited onto antiferromagnetic Ni$_{1-x}$Co$_{x}$O initiates a solid-state redox reaction that reduces an interfacial region of the oxide to ferromagnetic NiCo. Exchange bias…
Detection is most often the main impediment to reduce the number of spins in paramagnetic resonance experiments. Here we propose a new route to carry out electrically-detected spin resonance of an individual spin, placed at the edge of a quantum spin Hall insulator (QSHI). The edges of a QSHI host a one dimensional electron gas with perfect spin-momentum locking. Therefore, the spin relaxation induced by emission of an electron-hole pair at the edge state of the QSHI can generate current. Here we demonstrate that driving the system with an $AC$ signal, a nonequilibrium occupation can be induce…
Theory of Electrically Detected Magnetic Resonance of Silicon Vacancy-Related Spin Pairs in Silicon Carbide
University of Iowa（爱荷华大学）；Jet Propulsion Laboratory, California Institute of Technology（加州理工学院喷气推进实验室）；Donostia International Physics Center（圣塞巴斯蒂安国际物理中心）；Coastal Carolina University（海岸卡罗来纳大学）；The Pennsylvania State University（宾夕法尼亚州立大学）；Eindhoven University of Technology（埃因霍温理工大学）
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky…
Several microscopic pathways have been proposed to explain the large magnetic effects observed in organic semiconductors, but identifying and characterising which microscopic process actually influences the overall magnetic field response is challenging. Pulsed electrically-detected magnetic resonance provides an ideal platform for this task as it intrinsically monitors the charge carriers of interest and provides dynamical information which is inaccessible through conventional magnetoconductance measurements. Here we develop a general time domain theory to describe the spin-dependent reaction…
We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model system. Our measurements show that pulsed EDMR experiments, well established at X-band frequencies (10 GHz), such as coherent spin rotations, Hahn echoes, and measurements of parallel and antiparallel spin pair life times are also feasible at frequencies in the MHz regime. We find that the Rabi frequency of the coupled 31P electron-nuclear spin system scales with the magnetic field as predicted by the spin Hamiltonian, w…
Electrically detected magnetic resonance of $^{75}$As magnetic clock transitions in silicon
University of Melbourne（墨尔本大学）；University of Manchester（曼彻斯特大学）；University College London（伦敦大学学院）；RMIT University（皇家墨尔本理工大学）；Australian Research Council Centre for Quantum Computation and Communication Technology（澳大利亚研究委员会量子计算与通信技术中心）；CSIRO（联邦科学与工业研究组织）
The magnetization characteristic in a permalloy thin strip is investigated by electrically measuring the anisotropic magnetoresistance and ferromagnetic resonance in in-plane and out-of-plane configurations. Our results indicate that the magnetization vector can rotate in the film plane as well as out of the film plane by changing the intensity of external magnetic field of certain direction. The magnetization characteristic can be explained by considering demagnetization and magnetic anisotropy. Our method can be used to obtain the demagnetization factor, saturated magnetic moment and the mag…
Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vec…
The spin-Seebeck effect was recently discovered in a metallic ferromagnet and consists of a thermally generated spin distribution that is electrically measured utilizing the inverse spin Hall effect. Here this effect is reproduced experimentally in a ferromagnetic semiconductor, GaMnAs, which allows for flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition. The spin-Seebeck effect in GaMnAs is observed even in the absence of longitudinal charge transport. The spatial distribution of spin-currents is maintained across …
We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become spin-polarized opposite to the magnetization of an adjacent digital ferromagnetic layer in the AlGaAs barrier. A vertical bias is used to tune the spin polarization from -0.4 to 6.3 percent at T = 5 K and B = 1 kG during which the luminescence becomes quenched, indicating that the polarization is mediated by wave function overlap between heavy holes in the quantum well…
We demonstrate that the bandwidth of pulsed electrically detected magnetic resonance can be increased to at least 80 MHz using a radio frequency-reflectometry detection scheme. Using this technique, we measure coherent spin oscillations in real time during a resonant microwave pulse. We find that the observed signal is in quantitative agreement with simulations based on rate equations modeling the recombination dynamics of the spin system under study. The increased bandwidth opens the way to electrically study faster spin-dependent recombination processes, e.g., in direct semiconductors which …
We present a theoretical study of heat transport in electrically insulating ferromagnetic wires containing a domain wall. In the regime of validity of continuum micromagnetism a domain wall is found to have no effect on the heat conductance. However, spin waves are found to be reflected by domain walls with widths of a few lattice spacings, which is associated with emergence of an additional spin wave bound state. The resulting domain wall heat conductance should be significant for thin films of Yttrium Iron Garnet with sharply defined magnetic domains.
We describe a simple experimental method to detect electron paramagnetic resonance (EPR) in polycrystalline 2,2-diphenyl-1-picrylhydrazyl (DPPH) sample, the standard g-marker for EPR spectroscopy, without using a cavity resonator or a prefabricated waveguide. It is shown that microwave(MW) current injected into a layer of silver paint coated on an insulating DPPH sample is able to excite the paramagnetic resonance in DPPH. As the applied dc magnetic field H is swept, the high-frequency resistance of the Ag-paint layer, measured at room temperature with a single port impedance analyzer in the M…
Electrical control of magnetization is of crucial importance for integrated spintronics devices. Spin-orbit torques (SOT) in heavy-metal/ferromagnetic heterostructures have emerged as promising tool to achieve efficiently current-induced magnetization reversal. However, the microscopic origin of the SOT is being debated,with the spin Hall effect (SHE) due to nonlocal spin currents and the spin Rashba-Edelstein effect (SREE) due to local spin polarization at the interface being the primary candidates. We investigate the electrically induced out-of-equilibrium spin and orbital polarizations in p…
Electrically Accessible Metamagnetic Transition via a Doping-Induced Low-Energy Magnetic State in Antiferromagnetic Insulator RFeO3
Materials Genome Institute, Institute of Quantum Science and Technology, International Center for Quantum and Molecular Structures, Shanghai University（上海大学材料基因组研究所、量子科学技术研究院、国际量子与分子结构中心）；School of Material Science and Engineering, Shanghai University（上海大学材料科学与工程学院）；Institute of Physics, Shanghai University（上海大学物理系）
We describe a new experimental technique to investigate coupling effects between different layers or modes in ferromagnetic resonance (FMR). Dual FMR frequencies are excited (2-8 GHz) simultaneously and detected selectively in a broadband RF circuit, using lock-in amplifier detection at separate modulation frequencies.
Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance in particular of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-field-forbidden transitions between the magnetic substates can be observed due …
Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3). Measurements reveal that photo-excited charge carriers recombine through Pb0 and Pb1 dangling bonds and comparison to precipitate-free material indicates that these are present at both the sample surface and the oxide precipitates. The electronic recombination rates vary approximately linearly with precipitate density. Additional resonance lines arising from i…
The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically inves…
Controlling magnetism and electronic properties of two-dimensional (2D) materials by purely electrical means is crucial and highly sought for high-efficiency spintronics devices since electric field can be easily applied locally compared with magnetic field. The recently discover 2D Janus crystals has provide a new platform for nanoscale electronics and spintronics due to their broken inversion symmetry nature. The intrinsic ferromagnetic Jauns monolayer, and hence the tunable physical properties, is therefore of great interest. Here, through comprehensive density functional theory calculation…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused…
Triplet excited states in organic semiconductor materials and devices are notoriously difficult to detect and study with established spectroscopic methods. Yet, they are a crucial intermediate step in next-generation organic light emitting diodes (OLED) that employ thermally activated delayed fluorescence (TADF) to upconvert non-emissive triplets to emissive singlet states. In organic photovoltaic (OPV) devices, however, triplets are an efficiency-limiting exciton loss channel and are also involved in device degradation. Here, we introduce an innovative spin-sensitive method to study triplet s…
We demonstrate the electrical detection of pulsed X-band Electron Nuclear Double Resonance (ENDOR) in phosphorus-doped silicon at 5\,K. A pulse sequence analogous to Davies ENDOR in conventional electron spin resonance is used to measure the nuclear spin transition frequencies of the $^{31}$P nuclear spins, where the $^{31}$P electron spins are detected electrically via spin-dependent transitions through Si/SiO$_2$ interface states, thus not relying on a polarization of the electron spin system. In addition, the electrical detection of coherent nuclear spin oscillations is shown, demonstrating…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 microseconds: 50 times longer than the previous maximum for electrically-detected spin readout experiment…
The broadband microstrip ferromagnetic resonance technique has been applied for detection and characterization of a magnetic inhomogeneity in a film sample. In the case of a 100nm thick Permalloy film an additional magnetically depleted top sub-layer, practically unidentifiable by the conventional ferromagnetic resonance setup, has been detected and characterized. These results have been confirmed by Brillouin light scattering spectroscopy revealing the fact that the optical properties of the additional sub-layer do not differ much from those of the bulk of the film. Subsequent characterizatio…
In the quantum anomalous Hall effect, chiral edge modes are expected to conduct spin polarized current without dissipation and thus hold great promise for future electronics and spintronics with low energy consumption. However, spin polarization of chiral edge modes has never been established in experiments. In this work, we theoretically study spin polarization of chiral edge modes in the quantum anomalous Hall effect, based on both the effective model and more realistic tight-binding model constructed from the first principles calculations. We find that spin polarization can be manipulated b…
We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers.
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when the measurements were performed with constant source-drain and source-gate biases. By comparing with the magnetization-related resistance change resulting from the MnAs contacts, we conclude that the s…
Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by …
We studied the spin injection in a NiFe(Py)/Si system using broadband ferromagnetic resonance spectroscopy. The Gilbert damping parameter of the Py layer on top of the Si channel was determined as a function of the Si doping concentration and Py layer thickness. For fixed Py thickness we observed an increase of the Gilbert damping parameter with decreasing resistivity of the Si channel. For a fixed Si doping concentration we measured an increasing Gilbert damping parameter for decreasing Py layer thickness. No increase of the Gilbert damping parameter was found Py/Si samples with an insulating…
