使用肖特基隧道接触在n型锗沟道中电产生的自旋积累
Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
摘要：
利用高质量的Fe $_{3}$ Si/ $n^{+}$ -Ge肖特基隧道势垒接触，研究了$n$型锗（$n$ -Ge）沟道中的自旋积累.在三或两个端电压测量与低偏置电流条件下，在50 K，汉勒效应信号被清楚地检测到只有在正向偏置接触。这些是在$n$ -Ge通道中产生的自旋积累的电检测的可靠证据。在50 K下，$n$ -Ge的自旋寿命比最近报道的$n$ -Si的自旋寿命短一个数量级.自旋信号的大小不能用常用的自旋扩散模型来解释。我们讨论了实验数据和理论值之间的差异的可能来源。
英文摘要：
Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.
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