发表机构
University of Hyderabad（海德拉巴大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文提出利用双栅极输运结和垂直位移场打破反交错磁体的全局自旋简并，通过铁磁电极实现非对称隧穿磁电阻，为电学操控隐藏磁序提供了新框架。
AI 中文摘要
反交错磁体（AAMs）是最近发现的一类层状磁性材料，其中相邻层中相反的自旋劈裂形成全局自旋简并的能带结构，使得传统的谱学检测极为困难。在本文中，我们从理论上展示了一种利用双栅极输运结来操控和探测这种隐藏磁序的全电学方法。通过施加垂直位移场，我们打破了晶格的空间反演对称性，明确地消除了全局自旋简并。我们在AAM两侧连接铁磁（FM）电极。利用量子输运计算，我们表明这种栅极诱导的自旋劈裂表现为随电极磁化强度强烈变化的非对称隧穿磁电阻（TMR）。我们确定了特定的晶格取向，在这些取向下，尽管能带完全劈裂，TMR仍保持其对称性，这是动量空间精确补偿的直接结果。我们进一步揭示，Rashba自旋轨道耦合即使在层间没有显式化学势失配的情况下，也能保证稳健且高度方向性的输运不对称性。我们的发现为在下一代自旋电子学架构中利用AAMs建立了一个清晰且电学可调的框架。
英文摘要
Anti-altermagnets (AAMs) are a recently identified class of layered magnetic materials where opposite spin-splitting in adjacent layers creates a globally spin-degenerate band structure, rendering conventional spectroscopic detection highly difficult. In this paper, we theoretically demonstrate an all-electrical method to manipulate and probe this hidden magnetic order using a dual-gated transport junction. By applying a perpendicular displacement field, we break the spatial inversion symmetry of the lattice, explicitly lifting the global spin degeneracy. We attach ferromagnetic (FM) leads on either side of the AAM. Using quantum transport calculations, we show that this gate-induced spin-splitting manifests as a strongly asymmetric tunnel magnetoresistance (TMR) as a function of the lead magnetization. We identify specific crystallographic orientations where the TMR retains its symmetry despite the fully split bands, a direct consequence of exact momentum-space compensation. We further reveal that Rashba spin-orbit coupling guarantees robust, highly directional transport asymmetries even in the absence of an explicit chemical potential mismatch between the layers. Our findings establish a clear, electrically tunable framework for exploiting AAMs in next-generation spintronic architectures.
Comments4 pages, 3 captioned figures. Comments are welcome
