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arXiv 1105.3159cond-mat.str-elcond-mat.supr-con
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在母体绝缘铜氧化物中,真正的电荷转移能隙是多少?

What is the true charge transfer gap in parent insulating cuprates?

A. S. Moskvin

摘要:

大量的实验数据表明,母体绝缘铜氧化物的电荷转移不稳定性是其独特的性质。我们认为,这些化合物的真实电荷转移带隙为0.4- 0.5eV,而不是通常由光学带隙测量得到的1.5- 2.0eV。事实上,我们处理的竞争传统的(3d $^9$)基态和电荷转移(CT)的状态与形成的电子空穴二聚体的掺杂下演变成一个非常规的玻色子系统。我们的猜想提供了一个统一的立场上的主要实验结果的母体铜酸盐,包括线性和非线性光学,拉曼,光发射,光吸收,输运性质无论如何与CT激发。此外,我们提出了一个方案的演变的CuO $_2$飞机在CT不稳定的铜酸盐下的非等价掺杂。

英文摘要:

A large body of experimental data point towards a charge transfer instability of parent insulating cuprates to be their unique property. We argue that the true charge transfer gap in these compounds is as small as 0.4-0.5\,eV rather than 1.5-2.0\,eV as usually derived from the optical gap measurements. In fact we deal with a competition of the conventional (3d$^9$) ground state and a charge transfer (CT) state with formation of electron-hole dimers which evolves under doping to an unconventional bosonic system. Our conjecture does provide an unified standpoint on the main experimental findings for parent cuprates including linear and nonlinear optical, Raman, photoemission, photoabsorption, and transport properties anyhow related with the CT excitations. In addition we suggest a scenario for the evolution of the CuO$_2$ planes in the CT unstable cuprates under a nonisovalent doping.

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