The stability is analyzed of the magnetic junction collinear configurations against small fluctuations under amplitude-modulated current with CPP mode. High spin injection is assumed. Under parametric resonance conditions, with the modulation frequency twice the precession frequency, instability is possible of one, or another, or both the collinear configurations. When the dc component of the current density exceeds the instability threshold of the antiparallel configuration, the parametric instability is suppressed by nonparametric one which is induced by the dc current. The parametric instability manifests itself as lowering the threshold of the dc current density in presence of the high-frequency current, such an effect has been observed in experiments repeatedly.
We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near FM-S interface at low spin polarization of the current. We show that this effect can be used for an efficient polarization radiation source in a heterostructure where the accumulated spin polarized electrons are injected from $n$-S and recombine with holes in a quantum well. The radiation polarization depends on a bias voltage applied to the FM-S junction.
We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential o…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias …
We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is measured to investigate the spin injection efficiency. The obtained polarization of the electroluminescence is seen to increase up to about -12 % at the temperature of 6.5 K and the external magnetic field of 10 T. This result suggests that the efficient spin injection is possible through the ferromagnetic metal/semiconductor (FM/SC) interface without a tun…
We present a theory for resonance-tunneling magnetoresistance (MR) in Ferromagnetic-Insulator-Nonmagnetic junctions. The theory sheds light on many of the recent electrical spin injection experiments, suggesting that this MR effect rather than spin accumulation in the nonmagnetic channel corresponds to the electrically detected signal. We quantify the dependence of the tunnel current on the magnetic field by quantum rate equations derived from the Anderson impurity model, with important addition of impurity spin interactions. Considering the on-site Coulomb correlation, the MR effect is caused…
A drift-diffusion model for spin-charge transport in spin-polarized {\it p-n} junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all-semiconductor devices such as spin-polarized solar cells and bipolar transistors feasible. Spin-polarized {\it p-n} junctions allow for spin-polarized current generation, spin amplification, voltage control of spin polarization, and a significant extension of spin diffusion range.
We consider the properties of a periodic structure consisting of small alternating 0- and pi- Josephson junctions. We show that depending on the relation between the lengths of the individual junctions, this system can be either in the homogeneous or in the phase-modulated state. The modulated phase appears via a second order phase transition when the mismatch between the lengths of the individual junctions exceeds the critical value. The screening length diverges at the transition point. In the modulated state, the equilibrium phase difference in the structure can take any value from -pi to p…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polari…
Crystallographic and spin polarized transport properties of (100) textured and (100) epitaxial Fe/MgO/Fe magnetic tunnel junctions are compared. Strong similarities in the transport properties show that structural coherence and magnetic quality at the 25 nm grain scale in textured junctions are sufficient to issue signatures of the spin polarized transport specific to a single crystal junction. This demonstrates that the lateral coherence of the Bloch tunneling wave function is identically limited in both systems. Our analysis leads to model the textured tunnel junction as a juxtaposition of n…
We prepared magnetic tunnel junctions with one ferromagnetic and one superconducting Al-Si electrode. Pure cobalt electrodes were compared with a Co-Fe-B alloy and the Heusler compound Co2FeAl. The polarization of the tunneling electrons was determined using the Maki-Fulde-model and is discussed along with the spin-orbit scattering and the total pair-breaking parameters. The junctions were post-annealed at different temperatures to investigate the symmetry filtering mechanism responsible for the giant tunneling magnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to spin-dependent tunneling effect. Temperature dependent study indicated that the total conductance of the junction is dominated by direct tunneling, with only a small portion from the hopping conduction through the defect states inside the barrier.
The interplay between the surface and domain wall phenomena in multiferroic LaxBi1-xFeO3 in the vicinity of morphotropic phase transition is explored on the atomic level. Scanning Transmission Electron Microscopy (STEM) has enabled mapping of atomic structures of the material with picometer-level precision, providing direct insight into the spatial distribution of the order parameters in this material and their behavior at surfaces and interfaces. Here, we use the thermodynamic Landau-Ginzburg-Devonshire (LGD) approach to explain the emergence of spatially modulated phases (SMP) in La0.22Bi0.7…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface, and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact…
For spin-polarized junctions of ferromagnetically contacting multiple conductive paths, such as ferromagnet (FM)/atomic wires/FM and FM/carbon nanotubes/FM junctions, we theoretically investigate spin-dependent transport to elucidate the intrinsic relation between the number of paths and conduction, and to enhance the magnetoresistance (MR) ratio. When many paths are randomly located between the two FMs, electronic wave interference between the FMs appears, and then the MR ratio increases with increasing number of paths. Furthermore, at each number of paths, the MR ratio for carbon nanotubes b…
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric depolarizing field, whose switching changes the interface transmission probabilities for tunneling electrons, leading to electroresistance modulation over several orders of magnitude. The switching further affects the interface spin density, naturally driving magnetoresistance as well as modulated spin-dependent in-plane resistivity, which may be exploited in field-e…
We explore the transport properties of a periodically modulated $α$-$\mathcal{T}_3$ lattice in the presence of a perpendicular magnetic field. The effect of the Berry phase on electrical conductivity oscillation, so-called Weiss oscillation, caused by the modulation induced non-zero drift velocity of charge carriers is investigated. Employing linear response theory within the low temperature regime, we analyze Weiss oscillation as a function of the external magnetic field for both electrically and magnetically modulated $α$-$\mathcal{T}_3$ lattice numerically as well as analytically. The Berry…
The results are presented of a numerical simulation of the switching magnetic junction by a spin-polarized current pulse under applied magnetic field with the current density and field below the threshold values. A possibility is shown of the switching with controllable time delay relative to the current pulse.
We present a theoretical study of the effect of spin-filtering on the Josephson and dissipative quasiparticle currents in a superconducting tunnel junction. By combining the quasiclassical Green's functions and the tunneling Hamiltonian method we describe the transport properties of a generic junction consisting of two superconducting leads with an effective exchange field h separated by a spin-filter insulating barrier. We show that besides the tunneling of Cooper pairs with total spin-projection Sz = 0 there is another contribution to the Josephson current due to equal-spin Cooper pairs. The…
We calculate the response of a ferromagnet - antiferromagnet junction to a high-frequency magnetic field as a function of the spin-polarized current through the junction. Conditions are choused under which the response is zero in absence of such a current. It is shown that increasing in the current density leads to proportional increase in the resonance frequency and resonant absorption. A principal possibility is indicated of using ferromagnet - antiferromagnet junction as a terahertz radiation detector.
Nonequilibrium electron spin polarization is calculated under spin injection from one ferromagnet to another in magnetic junction. It is shown that the nonequilibrium spin polarization can be comparable with equilibrium one if the material parameters are chosen appropriately. This leads to lowering the threshold current density necessary for the junction switching and opens a perspective to creating THz laser based on the spin-polarized current injection.
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin-polarized at these voltages.
The developments in the field of quantum optics raise expectations that laser-matter coupling is a promising building block for magnonics. Here, we propose a method for the generation of direct and alternating spin currents of magnons across the junction interface irradiated by linearly polarized laser. In a junction of ferromagnetic insulators with a large electronic gap, the spin angular momentum is exchanged during the tunneling process of magnons across the junction interface. The advanced technology in the field of plasmonics and metamaterials realizes that spins irradiated by the laser f…
We have studied the temperature dependence of low-field magnetoresistance and current-voltage characteristics of a low-angle bi-crystal grain boundary junction in perovskite manganite La_{2/3}Sr_{1/3}MnO_3 thin film. By gradually trimming the junction we have been able to reveal the non-linear behavior of the latter. With the use of the relation M_{GB} \propto M_{bulk}\sqrt{MR^*} we have extracted the grain boundary magnetization. Further, we demonstrate that the built-in potential barrier of the grain boundary can be modelled by V_{bi}\propto M_{bulk}^2 - M_{GB}^2. Thus our model connects the…
In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnel barrier between Al and Co electrodes, we observed large magnetoresistance (MR). The bias dependence shows an abrupt increase of MR ratio in high bias voltage, which is contrary to conventional magnetic tunnel junctions (MTJs). This behavior can be understood as due to Fowler-Nordheim tunneling through the fully spin-polarized EuS conduction band. The I-V characteristics and bias dependence of MR calculated using tunneling theory shows excellent agreement with experiment.
Spin-polarized current effect is studied on the static and dynamic magnetization of the antiferromagnet in a ferromagnet - antiferromagnet junction. The macrospin approximation is generalized to antiferromagnets. Canted antiferromagnetic configuration and resulting magnetic moment are induced by an external magnetic field. The resonance frequency and damping are calculated, as well as the threshold current density corresponding to instability appearance. A possibility is shown of generating low-damping magnetization oscillations in terahertz range. The fluctuation effect is discussed on the ca…
Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with …
We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 10^6 A/cm^2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 10^5 A/cm^2.
Magnetic tunnel junctions with a ferrimagnetic barrier layer have been studied to understand the role of the barrier layer in the tunneling process - a factor that has been largely overlooked until recently. Epitaxial oxide junctions of highly spin polarized La0.7Sr0.3MnO3 and Fe3O4 electrodes with magnetic NiMn2O4 (NMO) insulating barrier layers provide a magnetic tunnel junction system in which we can probe the effect of the barrier by comparing junction behavior above and below the Curie temperature of the barrier layer. When the barrier is paramagnetic, the spin polarized transport is domi…
Spin-polarized supercurrents can be generated with magnetic inhomogeneity at a ferromagnet/spin-singlet-superconductor interface. In such systems, complex magnetic inhomogeneity makes it difficult to functionalise the spin-polarized supercurrents. However, spin-polarized supercurrents in ferromagnet/spin-triplet-superconductor junctions can be controlled by angle between magnetization and spin of Copper pairs ($d$-vector), that can effectively be utilized in developing of a field of research known as superconducting spintronics. Recently, we found induction of spin-triplet correlation into a f…
Spin-filter tunneling is a promising way to generate highly spin-polarized current, a key component for spintronics applications. In this work we explore the tunneling conductance across the spin-filter material CoFe2O4 interfaced with Au electrodes, a geometry which provides nearly perfect lattice matching at the CoFe2O4/Au(001) interface. Using density functional theory calculations we demonstrate that interface states play a decisive role in controlling the transport spin polarization in this tunnel junction. For a realistic CoFe2O4 barrier thickness, we predict a tunneling spin polarizatio…
Towards a novel magnetoresistance (MR) device with a carbon nanotube, we propose ``nonmagnetic metal/zigzag nanotube encapsulating magnetic atoms/nonmagnetic metal'' junctions. We theoretically investigate how spin-polarized edges of the nanotube and the encapsulated magnetic atoms influence on transport. When the on-site Coulomb energy divided by the magnitude of transfer integral, $U/|t|$, is larger than 0.8, large MR effect due to the direction of spins of magnetic atoms, which has the magnitude of the MR ratio of about 100%, appears reflecting such spin-polarized edges.
Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is attributed to the competition between the spin conserved ballistic transport through the pinhole contact where the transmission probability is close to unity and spin polarized tunneling across the insulating spacer with weak transmittivity.
In considering a novel function in ferromagnetic tunnel junctions consisting of ferromagnet(FM)/barrier/FM junctions, we theoretically investigate multiple valued (or multi-level) cell property, which is in principle realized by sensing conductances of four states recorded with magnetization configurations of two FMs; that is, (up,up), (up,down), (down,up), (down,down). To obtain such 4-valued conductances, we propose FM1/spin-polarized barrier/FM2 junctions, where the FM1 and FM2 are different ferromagnets, and the barrier has spin dependence. The proposed idea is applied to the case of the b…
Spin-Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions
School of Materials Science and Engineering, Beihang University（北京航空航天大学材料科学与工程学院）；State Key Laboratory of Tropic Ocean Engineering Materials and Materials Evaluation, Beihang University（热带海洋工程材料与材料评价国家重点实验室，北京航空航天大学）；The Analysis & Testing Center, Beihang University（北京航空航天大学分析测试中心）
